300A120DN2 [ETC]
IGBT Module ; IGBT模块\n
| 型号： | 300A120DN2 |
| 厂家： | 
ETC |
| 描述： | IGBT Module
|
| 文件： | 总4页 (文件大小：125K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BYM 300 A 120 DN2
Diode Power Module
• Inside fast free-wheeling diode
• Package with insulated metal base plate
• Diode especially for brake choppers
• matched with BSM 300 GA 120 DN 2
Type
V
I
Package
Ordering Code
R25
FDC
BYM 300 A 120 DN2
1200V 450A SINGLE DIODE 1
C67067-A2900-A70
Maximum Ratings
Parameter
Symbol
Values
Unit
Diode reverse voltage
V
V
R25
T = 25 °C
1200
j
DC current
I
I
A
FDC
T = 25 °C
450
300
C
T = 80 °C
C
Pulsed diode current, t = 1 ms
p
Fpuls
2
T = 25 °C
900
600
C
T = 80 °C
C
2
2
i t-value, Diode, t = 10 ms, T = 150 °C
∫i t
42000
1000
A s
W
P
j
Power dissipation per Diode
P
D
j
Chip temperature
T
T
+ 150
°C
Storage temperature
-40 ... + 125
stg
Thermal resistance, chip case
R
0.125
2500
20
K/W
Vac
mm
≤
thJC
Insulation test voltage, t = 1min.
Creepage distance
V
-
is
Clearance
-
11
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
-
F
sec
-
40 / 125 / 56
1
Oct-27-1997
BYM 300 A 120 DN2
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Values
typ.
Unit
min.
max.
Free-Wheel Diodes
Diode forward voltage
V
V
F
I = 300 A, V
= 0 V, T = 25 °C
-
-
2.3
1.8
2.8
-
F
GE
j
I = 300 A, V
= 0 V, T = 125 °C
j
F
GE
Reverse current
I
t
mA
µs
µC
R
V
V
= 1200 V, T = 25 °C
-
-
0.6
6
0.8
-
CA
j
= 1200 V, T = 125 °C
CA
j
Reverse recovery time
I = 300 A, V = -600 V, V = 0 V
rr
F
R
GE
di /dt = -2500 A/µs, T = 125 °C
-
0.55
-
F
j
Reverse recovery charge
I = 300 A, V = -600 V, V = 0 V
Q
rr
F
R
GE
di /dt = -2500 A/µs
F
T = 25 °C
-
-
14
40
-
-
j
T = 125 °C
j
2
Oct-27-1997
BYM 300 A 120 DN2
Power dissipation
Transient thermal impedance Diode
Ptot = (T )
Zth JC = (t )
ƒ
ƒ
C
p
parameter: Tj 150 °C
parameter: D = tp / T
≤
10 0
1100
W
K/W
900
Ptot
ZthJC
10 -1
800
700
600
500
400
300
200
10 -2
D = 0.50
0.20
0.10
0.05
10 -3
0.02
0.01
single pulse
100
0
10 -4
0
20
40
60
80 100 120 °C 160
10 -5
10 -4
10 -3
10 -2
10 -1 s 10 0
TC
tp
Forward characteristics of fast recovery
I = f(V )
reverse diode
F
F
parameter: Tj
600
A
500
IF
450
400
350
300
250
200
150
100
Tj=125°C
Tj=25°C
50
0
0.0
0.5
1.0
1.5
2.0
V
3.0
VF
3
Oct-27-1997
BYM 300 A 120 DN2
Circuit Diagram
Package Outlines
Dimensions in mm
Weight: 420 g
4
Oct-27-1997
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