300A170DN2 [ETC]
IGBT Module ; IGBT模块\n
| 型号： | 300A170DN2 |
| 厂家： | 
ETC |
| 描述： | IGBT Module
|
| 文件： | 总4页 (文件大小：238K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BYM 300 A 170 DN2
Diode Power Module
• Inside fast free-wheeling diode
• Package with insulated metal base plate
• Diode especially for brake choppers
• matched with BSM 300 GA 170 DN 2
Type
V
I
Package
Ordering Code
R25
FDC
BYM 300 A 170 DN2
1700V 380A SINGLE DIODE 1
C67070-A2901-A67
Maximum Ratings
Parameter
Symbol
Values
Unit
Diode reverse voltage
V
V
R25
T = 25 °C
1700
j
DC current
I
FDC
A
T = 25 °C
380
250
C
T = 80 °C
C
Pulsed diode current, t = 1 ms
I
Fpuls
p
T = 25 °C
760
500
C
T = 80 °C
C
2
2
2
i t-value, Diode, t = 10 ms, T = 150 °C
i t
42050
830
A s
W
P
j
Power dissipation per Diode
P
D
j
Chip temperature
T
T
+ 150
°C
Storage temperature
-40 ... + 125
stg
Thermal resistance, chip case
R
£ 0.17
K/W
Vac
mm
thJC
Insulation test voltage, t = 1min.
Creepage distance
V
4000
is
-
-
-
-
20
Clearance
11
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
F
sec
40 / 125 / 56
1
Oct-27-1997
BYM 300 A 170 DN2
Electrical Characteristics
Parameter
, at T = 25 °C, unless otherwise specified
j
Symbol
Values
Unit
min.
typ.
max.
Free-Wheel Diodes
Diode forward voltage
V
V
F
I = 300 A, V = 0 V, T = 25 °C
-
-
2.3
2.1
2.8
-
F
GE
j
I = 300 A, V = 0 V, T = 125 °C
F
GE
j
Reverse current
I
mA
µs
µC
R
V
V
= 1700 V, T = 25 °C
-
-
0.5
2
0.8
-
CA
CA
j
= 1700 V, T = 125 °C
j
Reverse recovery time
I = 300 A, V = -1200 V, V = 0 V
t
rr
F
R
GE
di /dt = -1500 A/µs, T = 125 °C
-
1
-
F
j
Reverse recovery charge
I = 300 A, V = -1200 V, V = 0 V
Q
rr
F
R
GE
di /dt = -1500 A/µs
F
T = 25 °C
-
-
22
70
-
-
j
T = 125 °C
j
2
Oct-27-1997
BYM 300 A 170 DN2
Power dissipation
Transient thermal impedance Diode
Z = ¦ (t )
th JC
P
= ¦ (T )
tot
C
p
parameter: T £ 150 °C
parameter: D = t / T
j
p
10 0
900
W
K/W
10 -1
Ptot
ZthJC
700
600
500
400
300
200
10 -2
D = 0.50
0.20
10 -3
0.10
0.05
single pulse
10 -4
0.02
0.01
100
0
10 -5
0
20
40
60
80
100 120 °C
160
10 -5
10 -4
10 -3
10 -2
10 -1 s 10 0
TC
tp
Forward characteristics of fast recovery
reverse diode
I = f(V )
F
F
parameter: T
j
600
A
Tj=125°C
Tj=25°C
500
450
400
350
300
250
200
150
100
IF
50
0
0.0
0.5
1.0
1.5
2.0
2.5
V
VF
3.5
3
Oct-27-1997
BYM 300 A 170 DN2
Circuit Diagram
Package Outlines
Dimensions in mm
Weight: 420 g
4
Oct-27-1997
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