2SK439D [ETC]


型号：	2SK439D
厂家：	ETC
描述：	TRANSISTOR \| MOSFET \| N-CHANNEL \| 20V V(BR)DSS \| 30MA I(D) \| SPAK 晶体管\| MOSFET \| N沟道\| 20V V（ BR ） DSS \|我30MA （D ） \| SPAK\n 晶体晶体管
文件：	总5页 (文件大小：24K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

2SK439

Silicon N-Channel MOS FET

ADE-208-1172 (Z)

1st. Edition

Mar. 2001

Application

VHF amplifier

Outline

SPAK

1. Gate

2. Source

3. Drain

2SK439

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

V_DS

Ratings

Unit

Drain to source voltage

Gate to source voltage

Drain current

V_GSS

I_D

±5

°C

Gate current

I_G

±1

Channel power dissipation

Channel temperature

Storage temperature

Pch

Tch

Tstg

300

150

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Typ

Max

Unit

Test conditions

Drain to source breakdown

voltage

V_(BR)DSX

—

I_D= 100 µA, V_GS= –4 V

Gate cutoff current

I_GSS

—

±20

–2.0

—

V_GS= ±5 V, V_DS= 0

V_DS= 10 V, V_GS= 0

V_DS= 10 V, I_D= 10 µA

Drain current

I_DSS

—

Gate to source cutoff voltage

Forward transfer admittance

Input capacitance

V_GS(off)

—

V_DS= 10 V, V_GS= 0, f = 1 kHz

y_fs

Ciss

—

2.5

0.03

1.8

—

V_DS= 10 V, V_GS= 0, f = 1 MHz

Reverse transfer capacitance Crss

—

Output capacitance

Power gain

Coss

—

V_DS= 5 V, V_GS= 0, f = 1 MHz

—

V_DS= 10 V, V_GS= 0,

f = 100 MHz

Noise figure

—

2.0

—

Note: 1. The 2SK439 is grouped by I_DSSas follows.

Grade

I_DSS

4 to 8

6 to 10

8 to 12

See characteristic curves of 2SK359.

2SK439

Maximum Channel Dissipation Curve

300

200

100

150

Ambient Temperature Ta (°C)

2SK439

Package Dimensions

As of January, 2001

2.2 Max

4.2 Max

Unit: mm

0.6 Max

0.45 ± 0.1

0.4 ± 0.1

1.27 1.27

2.54

Hitachi Code

JEDEC

SPAK

—

EIAJ

—

Mass (reference value)

0.10 g

2SK439

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,

Hitachi bears no responsibility for problems that may arise with third party’s rights, including

intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have

received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,

contact Hitachi’s sales office before using the product in an application that demands especially high

quality and reliability or where its failure or malfunction may directly threaten human life or cause risk

of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,

traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly

for maximum rating, operating supply voltage range, heat radiation characteristics, installation

conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used

beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable

failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-

safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other

consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without

written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor

products.

Hitachi, Ltd.

Semiconductor & Integrated Circuits.

Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan

Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109

URL

NorthAmerica

Europe

Asia

: http://semiconductor.hitachi.com/

: http://www.hitachi-eu.com/hel/ecg

: http://sicapac.hitachi-asia.com

Japan

: http://www.hitachi.co.jp/Sicd/indx.htm

For further information write to:

Hitachi Semiconductor

(America) Inc.

179 East Tasman Drive, Dornacher Straβe 3

Hitachi Europe GmbH

Electronic Components Group

Hitachi Asia Ltd.

Hitachi Tower

16 Collyer Quay #20-00,

Singapore 049318

Hitachi Asia (Hong Kong) Ltd.

Group III (Electronic Components)

7/F., North Tower,

San Jose,CA 95134

D-85622 Feldkirchen, Munich

World Finance Centre,

Tel: <1> (408) 433-1990 Germany

Fax: <1>(408) 433-0223 Tel: <49> (89) 9 9180-0

Fax: <49> (89) 9 29 30 00

Tel : <65>-538-6533/538-8577

Fax : <65>-538-6933/538-3877

URL : http://www.hitachi.com.sg

Harbour City, Canton Road

Tsim Sha Tsui, Kowloon,

Hong Kong

Tel : <852>-(2)-735-9218

Fax : <852>-(2)-730-0281

URL : http://www.hitachi.com.hk

Hitachi Europe Ltd.

Electronic Components Group.

Whitebrook Park

Lower Cookham Road

Maidenhead

Hitachi Asia Ltd.

(Taipei Branch Office)

4/F, No. 167, Tun Hwa North Road,

Hung-Kuo Building,

Taipei (105), Taiwan

Berkshire SL6 8YA, United Kingdom

Tel: <44> (1628) 585000

Fax: <44> (1628) 585160

Tel : <886>-(2)-2718-3666

Fax : <886>-(2)-2718-8180

Telex : 23222 HAS-TP

URL : http://www.hitachi.com.tw

Colophon 2.0

2SK439D [ETC]

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