2SK439FTZ [HITACHI]
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, SPAK-3;
| 型号： | 2SK439FTZ |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, SPAK-3 |
| 文件： | 总5页 (文件大小：27K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK439
Silicon N-Channel MOS FET
Application
VHF amplifier
Outline
SPAK
1. Gate
2. Source
3. Drain
1
2
3
2SK439
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VDS
Ratings
Unit
V
Drain to source voltage
Gate to source voltage
Drain current
20
VGSS
ID
±5
V
30
mA
mA
mW
°C
Gate current
IG
±1
Channel power dissipation
Channel temperature
Storage temperature
Pch
Tch
Tstg
300
150
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V(BR)DSX
20
—
—
V
ID = 100 µA, VGS = –4 V
Gate cutoff current
IGSS
—
4
—
±20
12
–2.0
—
nA
mA
V
VGS = ±5 V, VDS = 0
VDS = 10 V, VGS = 0
VDS = 10 V, ID = 10 µA
1
Drain current
IDSS
*
—
Gate to source cutoff voltage
Forward transfer admittance
Input capacitance
VGS(off)
0
—
8
14
mS
pF
pF
pF
dB
VDS = 10 V, VGS = 0, f = 1 kHz
yfs
Ciss
—
—
—
—
2.5
0.03
1.8
30
—
VDS = 10 V, VGS = 0, f = 1 MHz
Reverse transfer capacitance Crss
—
Output capacitance
Power gain
Coss
PG
—
VDS = 5 V, VGS = 0, f = 1 MHz
—
VDS = 10 V, VGS = 0,
f = 100 MHz
Noise figure
NF
—
2.0
—
dB
Note: 1. The 2SK439 is grouped by IDSS as follows.
Grade
D
E
F
IDSS
4 to 8
6 to 10
8 to 12
See characteristic curves of 2SK359.
2
2SK439
Maximum Channel Dissipation Curve
300
200
100
0
50
100
150
Ambient Temperature Ta (°C)
3
Unit: mm
2.2 Max
4.2 Max
0.6 Max
0.45 ± 0.1
0.4 ± 0.1
1.27 1.27
2.54
Hitachi Code
JEDEC
SPAK
—
EIAJ
—
Weight (reference value) 0.10 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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