2SK2960 [ETC]
;
| 型号： | 2SK2960 |
| 厂家： | 
ETC |
| 描述： |
|
| 文件： | 总2页 (文件大小：37K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Power F-MOS FETs
2SK2960
Silicon N-Channel Power F-MOS FET
■ Features
● Avalanche energy capacity guaranteed: EAS > 250mJ
unit: mm
● VGSS = ±30V guaranteed
● High-speed switching: tf = 55ns
● No secondary breakdown
4.6±0.2
9.9±0.3
2.9±0.2
φ3.2±0.1
■ Applications
● Contactless relay
● Diving circuit for a solenoid
● Driving circuit for a motor
● Control equipment
2.6±0.1
1.2±0.15
0.7±0.1
1.45±0.15
0.75±0.1
● Switching power supply
2.54±0.2
5.08±0.4
■ Absolute Maximum Ratings (TC = 25°C)
1
2 3
7
Parameter
Symbol
Ratings
Unit
V
1: Gate
2: Drain
3: Source
Drain to Source breakdown voltage VDSS
400
Gate to Source voltage
DC
Pulse
Avalanche energy capacity
VGSS
ID
±30
V
TO-220E Package
±10
A
Drain current
IDP
±20
A
EAS*
250
mJ
Allowable power
dissipation
TC = 25°C
Ta = 25°C
50
PD
W
2
Channel temperature
Storage temperature
Tch
150
°C
°C
Tstg
−55 to +150
*
L = 5mH, IL = 10A, 1 pulse
■ Electrical Characteristics (TC = 25°C)
Parameter
Symbol
IDSS
Conditions
VDS = 320V, VGS = 0
VGS = ±30V, VDS = 0
ID = 1mA, VGS = 0
min
typ
max
Unit
mA
µA
V
Drain to Source cut-off current
Gate to Source leakage current
0.1
±1
IGSS
Drain to Source breakdown voltage VDSS
400
2
Gate threshold voltage
Vth
VDS = 10V, ID = 1mA
VGS = 10V, ID = 5A
VDS = 10V, ID = 5A
IDR = 10A, VGS = 0
5
V
Drain to Source ON-resistance
Forward transfer admittance
Diode forward voltage
RDS(on)
| Yfs |
VDSF
0.4
5
0.52
Ω
3
S
−1.5
V
Input capacitance (Common Source) Ciss
Output capacitance (Common Source) Coss
Reverse transfer capacitance (Common Source) Crss
1400
290
100
25
pF
pF
pF
ns
VDS = 10V, VGS = 0, f = 1MHz
Turn-on time (delay time)
Rise time
td(on)
tr
td(off)
tf
VGS = 10V, ID = 5A
50
ns
Turn-off time (delay time)
Fall time
VDD = 100V, RL = 20Ω
170
55
ns
ns
1
Power F-MOS FETs
2SK2960
ID
VGS
| Yfs | ID
RDS(on)
ID
10.0
7.5
5.0
2.5
0
8
7
6
5
4
3
2
1
0
800
700
600
500
400
300
200
100
0
VDS=10V
Ta=25˚C
VDS=25V
Ta=25˚C
Ta=25˚C
VGS=10V
0
1
2
3
4
5
6
7
8
0
2.5
5.0
7.5
10.0
0
2.5
5.0
7.5
10.0
( )
V
(
A
)
( )
Drain current ID A
Gate to source voltage VGS
Drain current ID
RDS(on)
VGS
Ciss, Coss, Crss
VDS
td(on), tr, tf, td(off)
ID
6
5
4
3
2
1
0
104
103
102
10
250
200
150
100
50
f=1MHz
Ta=25˚C
VDD=100V
VGS=10V
Ta=25˚C
Ciss
td(off)
Coss
tf
tr
Crss
td(on)
0
0
5
10
15
20
25
30
0
25
50
75
100
0
2
4
6
8
10
(
V
)
(
V
)
( )
Drain current ID A
Gate to source voltage VGS
Drain to source voltage VDS
Rth(t)
t
102
10
Note: Rth was measured at Ta=25˚C
and under natural convection.
(1) Without heat sink
(1)
(2)
(2) With a 100 × 100 × 2mm Al heat sink
1
10–1
10–2
10–4
10–3
10–2
10–1
1
10
102
103
( )
s
Time
t
2
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