2SK1610 [ETC]
;
ETC 
Power F-MOS FETs
2SK1610
Silicon N-Channel Power F-MOS FET
■ Features
● High avalanche energy capacity
● VGSS: 30V guaranteed
unit: mm
● Low RDS(on), high-speed switching characteristic
15.0±0.5
13.0±0.5
10.5±0.5
4.5±0.2
■ Applications
● High-speed switching (switching power supply)
2.0±0.1
● For high-frequency power amplification
■ Absolute Maximum Ratings (TC = 25°C)
φ3.2±0.1
Parameter
Symbol
Ratings
500
Unit
V
Drain to Source breakdown voltage VDSS
2.0±0.2
Gate to Source voltage
DC
Pulse
Avalanche energy capacity
VGSS
ID
±30
V
1.4±0.3
0.6±0.2
1.1±0.1
±13
A
Drain current
5.45±0.3
IDP
±26
A
10.9±0.5
2
EAS*
170
mJ
1: Gate
2: Drain
3: Source
Allowable power
dissipation
TC = 25°C
Ta = 25°C
120
1
3
PD
W
2.5
EIAJ: SC-65(a)
TOP-3 Package (a)
Channel temperature
Storage temperature
Single pulse
Tch
150
°C
°C
Tstg
−55 to +150
*
■ Electrical Characteristics (TC = 25°C)
Parameter
Symbol
IDSS
Conditions
VDS = 400V, VGS = 0
VGS = ±30V, VDS = 0
ID = 1mA, VGS = 0
min
typ
max
Unit
mA
µA
V
Drain to Source cut-off current
Gate to Source leakage current
0.1
±1
IGSS
Drain to Source breakdown voltage VDSS
500
170
1
Avalanche energy capacity
Gate threshold voltage
EAS*
Vth
L = 2mH, ID = 13A, VDD = 50V
VDS = 25V, ID = 1mA
VGS = 10V, ID = 7A
mJ
V
5
Drain to Source ON-resistance
Forward transfer admittance
RDS(on)
| Yfs |
0.45
8
0.6
Ω
VDS = 25V, ID = 7A
5
S
Input capacitance (Common Source) Ciss
Output capacitance (Common Source) Coss
Reverse transfer capacitance (Common Source) Crss
1700
300
120
100
90
pF
pF
pF
ns
VDS = 20V, VGS = 0, f = 1MHz
Turn-on time
ton
VGS = 10V, ID = 7A
Fall time
tf
ns
VDD = 150V, RL = 21.4Ω
Turn-off time (delay time)
td(off)
210
ns
*
Avalanche energy capacity test circuit
L
ID
Gate
VDS
C
VDD
Drain
Source
PVS
RGS
1
Power F-MOS FETs
2SK1610
ID
VDS
| Yfs | ID
RDS(on)
ID
32
28
24
20
16
12
8
12
10
8
1.2
1.0
0.8
0.6
0.4
0.2
0
VDS=25V
TC=25˚C
VGS=10V
TC=25˚C
TC=25˚C
10V
GS=15V
V
8V
7V
6V
6
4
2
PD=120W
5V
20
4
0
0
0
4
8
12
16
24
0
4
8
12
16
20
24
0
5
10
15
20
25
(
V
)
(
A
)
( )
Drain current ID A
Drain to source voltage VDS
Drain current ID
ID
VGS
Ciss, Coss, Crss
VDS
ton, tf, td(off)
ID
10000
32
28
24
20
16
12
8
320
280
240
200
160
120
80
VDS=25V
TC=25˚C
f=1MHz
TC=25˚C
VDD=150V
GS=10V
TC=25˚C
V
3000
1000
Ciss
td(off)
300
100
Coss
ton
tf
Crss
30
10
4
40
0
0
0
2
4
6
8
10
0
40
80
120 160 200 240
0
4
8
12 16 20 24 28 32
(
V
)
(
V
)
( )
Drain current ID A
Gate to source voltage VGS
Drain to source voltage VDS
PD
Ta
Area of safe operation (ASO)
EAS
Tj
160
140
120
100
80
100
300
250
200
150
100
50
Non repetitive pulse
TC=25˚C
ID=13A
VDD=50V
(1) TC=Ta
(2) Without heat sink
(PD=2.5W)
IDP
ID
30
10
t=1ms
3
1
DC
(1)
10ms
60
0.3
0.1
40
20
0.03
0.01
(2)
20 40 60 80 100 120 140 160
0
0
25
0
1
3
10
30
100 300 1000
50
75
100 125 150 175
(
)
(
V
)
(
)
Ambient temperature Ta ˚C
Drain to source voltage VDS
Junction temperature Tj ˚C
2
相关型号：
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