2SK1612 [ETC]
;
ETC 
Power F-MOS FETs
2SK1612
Silicon N-Channel Power F-MOS FET
■ Features
● High avalanche energy capacity
● VGSS: 30V guaranteed
unit: mm
● Low RDS(on), high-speed switching characteristic
10.0±0.2
5.5±0.2
4.2±0.2
2.7±0.2
■ Applications
● High-speed switching (switching power supply)
● For high-frequency power amplification
φ3.1±0.1
■ Absolute Maximum Ratings (TC = 25°C)
Parameter
Symbol
Ratings
Unit
V
1.3±0.2
Drain to Source breakdown voltage VDSS
800
1.4±0.1
Gate to Source voltage
DC
Pulse
Avalanche energy capacity
VGSS
ID
±30
V
+0.2
–0.1
0.5
0.8±0.1
±3
A
Drain current
IDP
±6
A
2.54±0.25
EAS*
20
mJ
5.08±0.5
1: Gate
2: Drain
3: Source
EIAJ: SC-67
1
2
3
Allowable power
dissipation
TC = 25°C
Ta = 25°C
50
PD
W
2
Channel temperature
Storage temperature
Single pulse
Tch
150
°C
°C
TO-220 Full Pack Package (a)
Tstg
−55 to +150
*
■ Electrical Characteristics (TC = 25°C)
Parameter
Symbol
IDSS
Conditions
VDS = 720V, VGS = 0
VGS = ±30V, VDS = 0
ID = 1mA, VGS = 0
min
typ
max
0.1
Unit
mA
µA
V
Drain to Source cut-off current
Gate to Source leakage current
IGSS
±1
Drain to Source breakdown voltage VDSS
900
15
1
Avalanche energy capacity
Gate threshold voltage
EAS*
Vth
L = 3.4mH, ID = 3A, VDD = 50V
VDS = 25V, ID = 1mA
VGS = 10V, ID = 2A
mJ
V
5
5
Drain to Source ON-resistance
Forward transfer admittance
RDS(on)
| Yfs |
3.8
2.2
730
90
Ω
VDS = 25V, ID = 2A
1.5
S
Input capacitance (Common Source) Ciss
Output capacitance (Common Source) Coss
Reverse transfer capacitance (Common Source) Crss
pF
pF
pF
ns
VDS = 20V, VGS = 0, f = 1MHz
40
Turn-on time
ton
40
VGS = 10V, ID = 2A
Fall time
tf
35
ns
VDD = 200V, RL = 100Ω
Turn-off time (delay time)
td(off)
105
ns
*
Avalanche energy capacity test circuit
L
ID
Gate
VDS
C
VDD
Drain
Source
PVS
RGS
1
Power F-MOS FETs
2SK1612
ID
VDS
| Yfs | ID
RDS(on)
ID
6
5
4
3
2
1
0
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
10
8
VDS=25V
TC=25˚C
TC=25˚C
7V
TC=25˚C
10V
VGS=15V
6
V
GS=10V
6V
5V
4
15V
2
PD=50W
4V
50
0
0
10
20
30
40
60
0
1
2
3
4
5
0
1
2
3
4
5
6
( )
V
(
A
)
( )
Drain current ID A
Drain to source voltage VDS
Drain current ID
ID
VGS
Ciss, Coss, Crss
VDS
ton, tf, td(off)
ID
10000
6
5
4
3
2
1
0
160
140
120
100
80
f=1MHz
TC=25˚C
VDS=25V
TC=25V
VDD=200V
GS=10V
TC=25˚C
V
3000
1000
td(off)
Ciss
300
100
60
ton
tf
40
Crss
Coss
30
10
20
0
0
2
4
6
8
10
0
40
80
120 160 200 240
0
1
2
3
4
5
6
( )
V
(
V
)
( )
Drain current ID A
Gate to source voltage VGS
Drain to source voltage VDS
PD
Ta
Area of safe operation (ASO)
EAS
Tj
60
50
40
30
20
10
0
100
30
25
20
15
10
5
(1) TC=Ta
(2) Without heat sink
(PD=2W)
Non repetitive pulse
TC=25˚C
ID=3A
VDD=50V
30
10
IDP
ID
t=1ms
3
1
(1)
DC
0.3
0.1
10ms
0.03
0.01
(2)
0
25
0
20 40 60 80 100 120 140 160
1
3
10
30
100 300 1000
50
75
100 125 150 175
(
)
( )
V
(
)
Ambient temperature Ta ˚C
Drain to source voltage VDS
Junction temperature Tj ˚C
2
相关型号：
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