2SD467B [ETC]
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 700MA I(C) | TO-92 ; 晶体管| BJT | NPN | 20V V（ BR ） CEO | 700MA I（C ） | TO- 92\n
| 型号： | 2SD467B |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 700MA I(C) | TO-92
|
| 文件： | 总6页 (文件大小：30K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SD467
Silicon NPN Epitaxial
ADE-208-1134 (Z)
1st. Edition
Mar. 2001
Application
•
•
Low frequency power amplifier
Complementary pair with 2SB561
Outline
TO-92 (1)
1. Emitter
2. Collector
3. Base
3
2
1
2SD467
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
25
20
V
5
V
0.7
A
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
iC(peak)
PC
1.0
A
0.5
W
°C
°C
Tj
150
Tstg
–55 to +150
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
25
20
5
—
—
V
IC = 10 µA, IE = 0
Collector to emitter breakdown V(BR)CEO
voltage
—
—
—
—
V
IC = 1 mA, RBE = ∞
IE = 10 µA, IC = 0
VCB = 20 V, IE = 0
Emitter to base breakdown
voltage
V(BR)EBO
V
Collector cutoff current
DC current transfer ratio
ICBO
hFE*1
—
—
—
1.0
µA
85
240
VCE = 1 V, IC = 0.15 A
(Pulse test)
Collector to emitter saturation VCE(sat)
voltage
—
—
—
—
0.19
0.76
280
12
0.5
1.0
—
V
IC = 0.5 A, IB = 0.05 A
(Pulse test)
Base to emitter voltage
Gain bandwidth product
Collector output capacitance
VBE
V
VCE = 1 V, IC = 0.15 A
(Pulse test)
fT
MHz
pF
VCE = 1 V, IC = 0.15 A
(Pulse test)
Cob
—
VCB = 10 V, IE = 0, f = 1 MHz
Note: 1. The 2SD467 is grouped by hFE as follows.
B
C
85 to170
120 to 240
2
2SD467
Typical Output Characteristics
Maximum Collector Dissipation Curve
500
400
300
200
100
0.6
0.4
0.2
2.5
2.0
1.5
1.0
0.5 mA
IB = 0
0
0.4
0.8
1.2
1.6
2.0
0
50
100
150
Collector to Emitter Voltage VCE (V)
Ambient Temperature Ta (°C)
DC Current Transfer Ratio vs.
Collector Current
Typical Transfer Characteristics
1,000
5,000
VCE = 1 V
VCE = 1 V
Pulse
2,000
1,000
500
300
100
Ta = 75°C
25°C
200
100
50
30
10
Ta = 75°C
25°C
20
10
5
3
1
0
0.2
0.4
0.6
0.8
1.0
1
3
10
30
100 300 1,000
Base to Emitter Voltage VBE (V)
Collector Current IC (mA)
3
2SD467
Collector to Emitter Saturation
Voltage vs. Collector Current
Gain Bandwidth Product vs.
Collector Current
0.5
0.4
0.3
0.2
0.1
0
400
300
200
100
0
IC = 10 IB
VCE = 1 V
Ta = 75°C
25°C
1
3
10
30
100 300 1,000
10
20
50 100 200
500 1,000
Collector Current IC (mA)
Collector Current IC (mA)
Collector Output Capacitance vs.
Collector to Base Voltage
500
f = 1 MHz
E = 0
I
200
100
50
20
10
5
0.5 1.0
2
5
10
20
50
Collector to Base Voltage VCB (V)
4
2SD467
Package Dimensions
As of January, 2001
Unit: mm
4.8 ± 0.4
3.8 ± 0.4
0.60 Max
0.55Max
0.5Max
1.27
2.54
Hitachi Code
JEDEC
EIAJ
TO-92 (1)
Conforms
Conforms
0.25 g
Mass (reference value)
5
2SD467
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica
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Asia
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Japan
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For further information write to:
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive, Dornacher Straβe 3
Hitachi Europe GmbH
Electronic Components Group
Hitachi Asia Ltd.
Hitachi Tower
16 Collyer Quay #20-00,
Singapore 049318
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Group III (Electronic Components)
7/F., North Tower,
San Jose,CA 95134
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World Finance Centre,
Tel: <1> (408) 433-1990 Germany
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Hong Kong
Tel : <852>-(2)-735-9218
Fax : <852>-(2)-730-0281
URL : http://www.hitachi.com.hk
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Hitachi Asia Ltd.
(Taipei Branch Office)
4/F, No. 167, Tun Hwa North Road,
Hung-Kuo Building,
Taipei (105), Taiwan
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
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Tel : <886>-(2)-2718-3666
Fax : <886>-(2)-2718-8180
Telex : 23222 HAS-TP
URL : http://www.hitachi.com.tw
Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
Colophon 2.0
6
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