2SD2337D [ETC]
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 2A I(C) | TO-220FN ; 晶体管| BJT | NPN | 150V V( BR ) CEO | 2A I(C ) | TO- 220FN\n型号: | 2SD2337D |
厂家: | ETC |
描述: | TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 2A I(C) | TO-220FN
|
文件: | 总6页 (文件大小:32K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
2SD2337
Silicon NPN Triple Diffused
ADE-208-929 (Z)
1st. Edition
Sep. 2000
Application
Low frequency high voltage power amplifier TV vertical deflection output complementary pair with
2SB1530
Outline
TO-220FM
1. Base
2. Collector
3. Emitter
1
2
3
2SD2337
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
200
150
V
6
V
2
A
Collector peak current
Collector power dissipation
IC(peak)
5
A
PC
1.5
W
PC*1
Tj
20
Junction temperature
150
°C
°C
Storage temperature
Tstg
–45 to +150
Note: 1. Value at TC = 25°C.
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Collector to emitter breakdown V(BR)CEO
voltage
150
—
—
V
IC = 50 mA, RBE = ∞
Emitter to base breakdown
voltage
V(BR)EBO
6
—
—
V
IE = 5 mA, IC = 0
Collector cutoff current
DC current transfer ratio
ICBO
—
60
60
—
—
—
—
—
1
µA
VCB = 120 V, IE = 0
1
hFE1
hFE2
*
320
—
VCE = 4 V, IC = 50 mA
VCE = 10 V, IC = 500 mA*2
IC = 500 mA, IB = 50 mA*2
Collector to emitter saturation VCE(sat)
voltage
3.0
V
V
Base to emitter voltage
VBE
—
—
1.0
VCE = 4 V, IC = 50 mA
Notes: 1. The 2SD2337 is grouped by hFE1 as follows.
2. Pulse test.
B
C
D
60 to 120
100 to 200 160 to 320
2
2SD2337
Maximum Collector Dissipation Curve
30
20
10
Area of Safe Operation
10
5
IC (max)
(Continuous)
2
1.0
0.5
(15, 2 A)
TC
(60, 0.4 A)
0.2
0.1
1.5 W
Ta
(150 V, 65 mA)
150
100
50
0
0.05
2
5
10 20
50 100 200
Ambient temperature Ta (°C)
Case temperature TC (°C)
Collector to emitter voltage VCE (V)
Typical Output Characteristics
Typical Transfer Characteristics
1.0
1,000
TC = 25°C
VCE = 4 V
Pulse
500
8
7
0.8
0.6
0.4
0.2
200
100
50
TC = 75°C
6
5
25
–25
4
3
20
10
5
2
1 mA
IB = 0
2
1
0
2
4
6
8
10
0
0.2
0.4
0.6
0.8
1.0
Collector to emitter voltage VCE (V)
Base to emitter voltage VBE (V)
3
2SD2337
DC Current Transfer Ratio
vs. Collector Current
Collector to Emitter Saturation Voltage
vs. Collector Current
500
VCE = 4 V
Pulse
0.5
0.2
lC = 10 lB
Pulse
200
TC = 75°C
25
TC = 75°C
100
50
0.1
–25
–25
25
0.05
20
0.02
10
5
0.01
0.005
10 20
50 100 200
500 1,000 2,000
10
30
100
300
1,000 2,000
Collector current IC (mA)
Collector current IC (mA)
4
2SD2337
Package Dimensions
Unit: mm
10.0 ± 0.3
7.0 ± 0.3
2.8 ± 0.2
2.5 ± 0.2
φ 3.2 ± 0.2
1.2 ± 0.2
1.4 ± 0.2
4.45 ± 0.3
2.5
0.7 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
0.5 ± 0.1
Hitachi Code
JEDEC
TO-220FM
—
EIAJ
Conforms
1.8 g
Mass (reference value)
5
2SD2337
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica
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Asia
: http://semiconductor.hitachi.com/
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Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive, Dornacher Straβe 3
Hitachi Europe GmbH
Electronic Components Group
Hitachi Asia Ltd.
Hitachi Tower
16 Collyer Quay #20-00,
Singapore 049318
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower,
San Jose,CA 95134
D-85622 Feldkirchen, Munich
World Finance Centre,
Tel: <1> (408) 433-1990 Germany
Fax: <1>(408) 433-0223 Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Tel : <65>-538-6533/538-8577
Fax : <65>-538-6933/538-3877
URL : http://www.hitachi.com.sg
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Hong Kong
Tel : <852>-(2)-735-9218
Fax : <852>-(2)-730-0281
URL : http://www.hitachi.com.hk
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Hitachi Asia Ltd.
(Taipei Branch Office)
4/F, No. 167, Tun Hwa North Road,
Hung-Kuo Building,
Taipei (105), Taiwan
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 585160
Tel : <886>-(2)-2718-3666
Fax : <886>-(2)-2718-8180
Telex : 23222 HAS-TP
URL : http://www.hitachi.com.tw
Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
Colophon 2.0
6
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