2SD2337D [ETC]

TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 2A I(C) | TO-220FN ; 晶体管| BJT | NPN | 150V V( BR ) CEO | 2A I(C ) | TO- 220FN\n
2SD2337D
型号: 2SD2337D
厂家: ETC    ETC
描述:

TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 2A I(C) | TO-220FN
晶体管| BJT | NPN | 150V V( BR ) CEO | 2A I(C ) | TO- 220FN\n

晶体 晶体管 放大器 局域网
文件: 总6页 (文件大小:32K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
2SD2337  
Silicon NPN Triple Diffused  
ADE-208-929 (Z)  
1st. Edition  
Sep. 2000  
Application  
Low frequency high voltage power amplifier TV vertical deflection output complementary pair with  
2SB1530  
Outline  
TO-220FM  
1. Base  
2. Collector  
3. Emitter  
1
2
3
2SD2337  
Absolute Maximum Ratings (Ta = 25°C)  
Item  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current  
200  
150  
V
6
V
2
A
Collector peak current  
Collector power dissipation  
IC(peak)  
5
A
PC  
1.5  
W
PC*1  
Tj  
20  
Junction temperature  
150  
°C  
°C  
Storage temperature  
Tstg  
–45 to +150  
Note: 1. Value at TC = 25°C.  
Electrical Characteristics (Ta = 25°C)  
Item  
Symbol Min  
Typ  
Max  
Unit  
Test conditions  
Collector to emitter breakdown V(BR)CEO  
voltage  
150  
V
IC = 50 mA, RBE = ∞  
Emitter to base breakdown  
voltage  
V(BR)EBO  
6
V
IE = 5 mA, IC = 0  
Collector cutoff current  
DC current transfer ratio  
ICBO  
60  
60  
1
µA  
VCB = 120 V, IE = 0  
1
hFE1  
hFE2  
*
320  
VCE = 4 V, IC = 50 mA  
VCE = 10 V, IC = 500 mA*2  
IC = 500 mA, IB = 50 mA*2  
Collector to emitter saturation VCE(sat)  
voltage  
3.0  
V
V
Base to emitter voltage  
VBE  
1.0  
VCE = 4 V, IC = 50 mA  
Notes: 1. The 2SD2337 is grouped by hFE1 as follows.  
2. Pulse test.  
B
C
D
60 to 120  
100 to 200 160 to 320  
2
2SD2337  
Maximum Collector Dissipation Curve  
30  
20  
10  
Area of Safe Operation  
10  
5
IC (max)  
(Continuous)  
2
1.0  
0.5  
(15, 2 A)  
TC  
(60, 0.4 A)  
0.2  
0.1  
1.5 W  
Ta  
(150 V, 65 mA)  
150  
100  
50  
0
0.05  
2
5
10 20  
50 100 200  
Ambient temperature Ta (°C)  
Case temperature TC (°C)  
Collector to emitter voltage VCE (V)  
Typical Output Characteristics  
Typical Transfer Characteristics  
1.0  
1,000  
TC = 25°C  
VCE = 4 V  
Pulse  
500  
8
7
0.8  
0.6  
0.4  
0.2  
200  
100  
50  
TC = 75°C  
6
5
25  
–25  
4
3
20  
10  
5
2
1 mA  
IB = 0  
2
1
0
2
4
6
8
10  
0
0.2  
0.4  
0.6  
0.8  
1.0  
Collector to emitter voltage VCE (V)  
Base to emitter voltage VBE (V)  
3
2SD2337  
DC Current Transfer Ratio  
vs. Collector Current  
Collector to Emitter Saturation Voltage  
vs. Collector Current  
500  
VCE = 4 V  
Pulse  
0.5  
0.2  
lC = 10 lB  
Pulse  
200  
TC = 75°C  
25  
TC = 75°C  
100  
50  
0.1  
–25  
–25  
25  
0.05  
20  
0.02  
10  
5
0.01  
0.005  
10 20  
50 100 200  
500 1,000 2,000  
10  
30  
100  
300  
1,000 2,000  
Collector current IC (mA)  
Collector current IC (mA)  
4
2SD2337  
Package Dimensions  
Unit: mm  
10.0 ± 0.3  
7.0 ± 0.3  
2.8 ± 0.2  
2.5 ± 0.2  
φ 3.2 ± 0.2  
1.2 ± 0.2  
1.4 ± 0.2  
4.45 ± 0.3  
2.5  
0.7 ± 0.1  
2.54 ± 0.5  
2.54 ± 0.5  
0.5 ± 0.1  
Hitachi Code  
JEDEC  
TO-220FM  
EIAJ  
Conforms  
1.8 g  
Mass (reference value)  
5
2SD2337  
Cautions  
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,  
copyright, trademark, or other intellectual property rights for information contained in this document.  
Hitachi bears no responsibility for problems that may arise with third party’s rights, including  
intellectual property rights, in connection with use of the information contained in this document.  
2. Products and product specifications may be subject to change without notice. Confirm that you have  
received the latest product standards or specifications before final design, purchase or use.  
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,  
contact Hitachi’s sales office before using the product in an application that demands especially high  
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk  
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,  
traffic, safety equipment or medical equipment for life support.  
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly  
for maximum rating, operating supply voltage range, heat radiation characteristics, installation  
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used  
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable  
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-  
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other  
consequential damage due to operation of the Hitachi product.  
5. This product is not designed to be radiation resistant.  
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without  
written approval from Hitachi.  
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor  
products.  
Hitachi, Ltd.  
Semiconductor & Integrated Circuits.  
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109  
URL  
NorthAmerica  
Europe  
Asia  
: http://semiconductor.hitachi.com/  
: http://www.hitachi-eu.com/hel/ecg  
: http://sicapac.hitachi-asia.com  
Japan  
: http://www.hitachi.co.jp/Sicd/indx.htm  
For further information write to:  
Hitachi Semiconductor  
(America) Inc.  
179 East Tasman Drive, Dornacher Straβe 3  
Hitachi Europe GmbH  
Electronic Components Group  
Hitachi Asia Ltd.  
Hitachi Tower  
16 Collyer Quay #20-00,  
Singapore 049318  
Hitachi Asia (Hong Kong) Ltd.  
Group III (Electronic Components)  
7/F., North Tower,  
San Jose,CA 95134  
D-85622 Feldkirchen, Munich  
World Finance Centre,  
Tel: <1> (408) 433-1990 Germany  
Fax: <1>(408) 433-0223 Tel: <49> (89) 9 9180-0  
Fax: <49> (89) 9 29 30 00  
Tel : <65>-538-6533/538-8577  
Fax : <65>-538-6933/538-3877  
URL : http://www.hitachi.com.sg  
Harbour City, Canton Road  
Tsim Sha Tsui, Kowloon,  
Hong Kong  
Tel : <852>-(2)-735-9218  
Fax : <852>-(2)-730-0281  
URL : http://www.hitachi.com.hk  
Hitachi Europe Ltd.  
Electronic Components Group.  
Whitebrook Park  
Lower Cookham Road  
Maidenhead  
Hitachi Asia Ltd.  
(Taipei Branch Office)  
4/F, No. 167, Tun Hwa North Road,  
Hung-Kuo Building,  
Taipei (105), Taiwan  
Berkshire SL6 8YA, United Kingdom  
Tel: <44> (1628) 585000  
Fax: <44> (1628) 585160  
Tel : <886>-(2)-2718-3666  
Fax : <886>-(2)-2718-8180  
Telex : 23222 HAS-TP  
URL : http://www.hitachi.com.tw  
Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.  
Colophon 2.0  
6

相关型号:

2SD234

Silicon NPN Power Transistors
ISC

2SD234

Silicon NPN Power Transistors
SAVANTIC

2SD2340

Silicon NPN Power Transistors
SAVANTIC

2SD2340

Silicon NPN Power Transistors
ISC

2SD2340

Power Bipolar Transistor, 6A I(C), 130V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
PANASONIC

2SD2341

Power Device - Power Transistors - Others
ETC

2SD2341R

TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 2A I(C) | TO-126VAR
ETC

2SD2341S

TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 2A I(C) | TO-126VAR
ETC

2SD2342B

TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 6A I(C) | TO-247VAR
ETC

2SD2342C

TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 6A I(C) | TO-247VAR
ETC

2SD2343

Power Transistor
ROHM