2SD2342B [ETC]
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 6A I(C) | TO-247VAR ; 晶体管| BJT | NPN | 80V V（ BR ） CEO | 6A I（C ） | TO- 247VAR\n
| 型号： | 2SD2342B |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 6A I(C) | TO-247VAR
|
| 文件： | 总5页 (文件大小：33K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SD2342
Silicon NPN Triple Diffused
Application
Low frequency power amplifier
Outline
TO-3P
1. Base
2. Collector
(Flange)
3. Emitter
1
2
3
2SD2342
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
150
80
V
6
V
6
A
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at TC = 25°C.
IC(peak)
PC*1
Tj
10
A
50
W
°C
°C
150
Tstg
–50 to +150
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
150
80
6
—
—
V
IC = 5 mA, IE = 0
Collector to emitter breakdown V(BR)CEO
voltage
—
—
—
—
V
IC = 50 mA, RBE = ∞
Emitter to base breakdown
voltage
V(BR)EBO
V
IE = 5 mA, IC = 0
Collector cutoff current
DC current transfer ratio
ICBO
—
60
22
—
—
—
—
—
—
—
10
µA
VCB = 120 V, IE = 0
VCE = 5 V, IC = 1 A
VCE = 5 V, IC = 5 A
VCE = 5 V, IC = 1 A
IC = 5 A, IB = 1 A
1
hFE1
hFE2
VBE
*
200
—
Base to emitter voltage
1.0
1.5
V
V
Collector to emitter saturation VCE(sat)
voltage
Note: 1. The 2SD2342 is grouped by hFE1 as follows.
B
C
60 to 120
100 to 200
2SD2342
Maximum Collector Dissipation Curve
60
40
20
0
50
100
150
Case temperature TC (°C)
Area of Safe Operation
20
10
5
IC max
(Continuous)
2
1.0
0.5
0.2
0.1
(80 V, 0.2 A)
10 20 50 100
0.5 1.0
2
5
Collector to emitter voltage
VCE (V)
Typical Output Characteristics
40
90 80 70 60
100
5
4
3
2
1
0
50
30
20
IB = 10 mA
TC = 25°C
5
10
Collector to emitter voltage VCE (V)
2SD2342
Typical Transfer Characteristics
6
5
4
3
2
1
0
VCE = 5 V
TC = 75°C
25°C
–25°C
0.2 0.4 0.6 0.8 1.0 1.2
Base to emitter voltage VBE (V)
DC Current Transfer Ratio
vs. Collector Current
1000
500
VCE = 5 V
TC = 75°C
200
100
50
25°C
–25°C
20
10
5
2
1
0.02 0.05 0.1 0.2 0.5
1
2
5 10
Collector current
IC (A)
Collector to Emitter Saturation Voltage
vs. Collector Current
1000
IC / IB = 5
500
TC = 25°C
200
100
50
20
10
5
2
1
0.02 0.05 0.1 0.2 0.5
1
2
5 10
Collector current
I
C (A)
2SD2342
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intellectual property claims or other problems that may result from applications based on the
examples described herein.
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