2SD2143TL [ETC]
BJT ; BJT\n
| 型号： | 2SD2143TL |
| 厂家： | 
ETC |
| 描述： | BJT
|
| 文件： | 总1页 (文件大小：33K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SD2212 / 2SD2143 / 2SD1866
Transistors
Medium Power Transistor
(Motor, Relay drive) (60±10V, 2A)
2SD2212 / 2SD2143 / 2SD1866
zExternal dimensions (Units : mm)
zFeatures
1) Built-in zener diode between collector and base.
2) Strong protection against reverse surges due to "L"
loads.
2SD2212
4.0
1.0
2.5
0.5
(
)
1
(
)
2
3
3) Built-in resistor between base and emitter.
4) Built-in damper diode.
(
)
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
ROHM : MPT3
EIAJ : SC-62
zAbsolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
V
Limits
60±10
60±10
6
Unit
V
V
V
A(DC)
1.5
5.5
2SD2143
CBO
V
V
CES
EBO
2
I
C
Collector current
0.9
3
2
10
1
A(Pulse)
W
W(Tc=25°C)
1
2
2SD2212
2SD2143
2SD1866
Collector power
dissipation
P
C
C0.5
W
°C
°C
3
Junction temperature
Storage temperature
Tj
Tstg
150
−55~+150
0.8Min.
1
Single pulse Pw=100ms
2 When mounted on a 40×40×0.7mm ceramic board.
Printed circuit board 1.7mm thick, collector plating 1cm2 or larger.
1.5
3
2.5
9.5
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
ROHM : CPT3
EIAJ : SC-63
zPackaging specifications and hFE
Type
2SD2212
MPT3
1k~10k
T100
2SD2143
CPT3
1k~10k
TL
2SD1866
ATV
Package
1k~10k
TV2
2500
hFE
Code
Basic ordering unit (pieces)
2SD1866
2.5
6.8
1000
2500
zEquivalent circuit
0.65Max.
C
0.5
B
( )
2
( )
3
( )
1
R1
R2
2.54
2.54
E
E : Emitter
B : Base
C : Collector
1.05
0.45
R
R
1
2
3.5kΩ
300Ω
Taping specifications
(1) Emitter
(2) Collector
(3) Base
ROHM : ATV
zElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
BVCBO
BVCEO
50
50
−
−
−
−
−
−
−
−
70
70
1.0
3
1.5
10000
−
V
V
µA
mA
V
I
I
V
V
I
C
=
50µA
C=
5mA
=40V
I
CBO
EBO
CE(sat)
FE
CB
I
V
h
EB=5V
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Output capacitance
C/I
B
=
1A/1mA
2V, IC 1A
10V, IE 0A, f=1MHz
1000
−
−
25
−
pF
V
V
CE
CB
=
=
=
=
Cob
Measured using pulse current.
相关型号：
2SD2144STP/UW
Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon
ROHM
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