2SD2144S/VW [ROHM]
Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon;![2SD2144S/VW](http://pdffile.icpdf.com/pdf1/p00079/img/icpdf/2SD2144_415412_icpdf.jpg)
型号: | 2SD2144S/VW |
厂家: | ![]() |
描述: | Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon 晶体 晶体管 |
文件: | 总4页 (文件大小:126K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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Transistors
High-current Gain Medium
Power Transistor (20V, 0.5A)
2SD2114K / 2SD2144S
FFeatures
FExternal dimensions (Units: mm)
1) High DC current gain.
hFE = 1200 (Typ.)
2) High emitter-base voltage.
VEBO = 12V (Min.)
3) Low VCE(sat).
VCE(sat) = 0.18V (Typ.)
(IC / IB = 500mA / 20mA)
FStructure
Epitaxial planar type
NPN silicon transistor
(96-232-C107)
232
Transistors
2SD2114K / 2SD2144S
FAbsolute maximum ratings (Ta = 25_C)
FElectrical characteristics (Ta = 25_C)
FPackaging specifications and hFE
FElectrical characteristic curves
hFE values are classified as follows :
233
Transistors
2SD2114K / 2SD2144S
234
Transistors
2SD2114K / 2SD2144S
FRon measurement circuit
235
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2SD2144STP/UW
Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon
ROHM
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2SD2144STP/VW
Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon
ROHM
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2SD2144STPV
Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, SPT, SC-72, 3 PIN
ROHM
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