2SD1264/2SD1264A [ETC]

2SD1264. 2SD1264A - NPN Transistor ; 2SD1264 。 2SD1264A - NPN晶体管\n
2SD1264/2SD1264A
型号: 2SD1264/2SD1264A
厂家: ETC    ETC
描述:

2SD1264. 2SD1264A - NPN Transistor
2SD1264 。 2SD1264A - NPN晶体管\n

晶体 晶体管
文件: 总3页 (文件大小:51K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Power Transistors  
2SD1264, 2SD1264A  
Silicon NPN triple diffusion planar type  
For low-freauency power amplification  
Unit: mm  
For TV vertical deflection output  
10.0±0.2  
5.5±0.2  
4.2±0.2  
Complementary to 2SB0940 (2SB940) and 2SB0940A (2SB940A)  
2.7±0.2  
Features  
High collector to emitter VCEO  
φ3.1±0.1  
Large collector power dissipation PC  
Full-pack package which can be installed to the heat sink with  
one screw  
1.3±0.2  
1.4±0.1  
+0.2  
–0.1  
0.5  
Absolute Maximum Ratings (T =25˚C)  
C
0.8±0.1  
Parameter  
Symbol  
Ratings  
Unit  
2.54±0.25  
Collector to base voltage  
VCBO  
200  
V
5.08±0.5  
Collector to  
2SD1264  
150  
1
2
3
VCEO  
V
emitter voltage 2SD1264A  
Emitter to base voltage  
Peak collector current  
Collector current  
180  
1:Base  
2:Collector  
3:Emitter  
VEBO  
ICP  
6
V
A
A
3
TO–220 Full Pack Package(a)  
IC  
2
Collector power TC=25°C  
30  
PC  
W
dissipation  
Ta=25°C  
2
Junction temperature  
Storage temperature  
Tj  
150  
˚C  
˚C  
Tstg  
–55 to +150  
Electrical Characteristics (T =25˚C)  
C
Parameter  
Symbol  
ICBO  
Conditions  
min  
typ  
max  
50  
Unit  
µA  
µA  
V
Collector cutoff current  
Emitter cutoff current  
Collector to base voltage  
VCB = 200V, IE = 0  
VEB = 4V, IC = 0  
C = 50µA, IE = 0  
IEBO  
50  
VCBO  
I
200  
150  
180  
6
2SD1264  
2SD1264A  
Collector to emitter  
voltage  
VCEO  
VEBO  
IC = 5mA, IB = 0  
V
V
Emitter to base voltage  
IE = 500µA, IC = 0  
*
hFE1  
VCE = 10V, IC = 150mA  
VCE = 10V, IC = 400mA  
VCE = 10V, IC = 400mA  
IC = 500mA, IB = 50mA  
VCE = 5V, IC = 0.5A, f = 1MHz  
60  
240  
Forward current transfer ratio  
Base to emitter voltage  
hFE2  
VBE  
50  
1
1
V
V
Collector to emitter saturation voltage VCE(sat)  
Transition frequency  
fT  
20  
MHz  
*hFE1 Rank classification  
Rank  
hFE1  
Q
P
60 to 140  
100 to 240  
Note) The part numbers in the parenthesis show conventional part number.  
1
Power Transistors  
2SD1264, 2SD1264A  
PC — Ta  
IC — VCE  
IC — VBE  
50  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
1.2  
TC=25˚C  
IB=7mA  
(1) TC=Ta  
(2) With a 100 × 100 × 2mm  
25˚C  
Al heat sink  
(3) With a 50 × 50 × 2mm  
Al heat sink  
(4) Without heat sink  
(PC=2W)  
1.0  
0.8  
0.6  
0.4  
0.2  
0
40  
30  
20  
10  
0
TC=100˚C  
–25˚C  
6mA  
5mA  
(1)  
(2)  
4mA  
3mA  
2mA  
1mA  
(3)  
(4)  
0
20 40 60 80 100 120 140 160  
0
4
8
12  
16  
20  
24  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
(
)
( )  
V
( )  
Base to emitter voltage VBE V  
Ambient temperature Ta ˚C  
Collector to emitter voltage VCE  
VCE(sat) — IC  
hFE — IC  
fT — IC  
10  
10000  
1000  
IC/IB=10  
VCE=10V  
VCE=5V  
f=1MHz  
TC=25˚C  
3000  
300  
100  
3
1
1000  
TC=100˚C  
TC=100˚C  
25˚C  
300  
100  
30  
10  
0.3  
0.1  
25˚C  
–25˚C  
30  
10  
3
1
–25˚C  
0.03  
0.01  
3
1
0.3  
0.1  
0.01  
0.03  
0.1  
0.3  
1
0.01 0.03  
0.1  
0.3  
1
3
10  
0.01 0.03  
0.1  
0.3  
1
3
10  
(
A
)
( )  
A
( )  
Collector current IC A  
Collector current IC  
Collector current IC  
Area of safe operation (ASO)  
Rth(t) — t  
10  
103  
102  
10  
Non repetitive pulse  
TC=25˚C  
(1) Without heat sink  
(2) With a 100 × 100 × 2mm Al heat sink  
ICP  
3
1
IC  
t=0.5ms  
(1)  
(2)  
5ms  
1ms  
0.3  
0.1  
DC  
1
0.03  
0.01  
10–1  
10–2  
0.003  
0.001  
1
3
10  
30  
100 300 1000  
10–4  
10–3  
10–2  
10–1  
1
10  
102  
103  
104  
(
V
)
( )  
t s  
Collector to emitter voltage VCE  
Time  
2
Request for your special attention and precautions in using the technical information  
and semiconductors described in this material  
(1) An export permit needs to be obtained from the competent authorities of the Japanese Govern-  
ment if any of the products or technologies described in this material and controlled under the  
"Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan.  
(2) The technical information described in this material is limited to showing representative character-  
istics and applied circuit examples of the products. It does not constitute the warranting of industrial  
property, the granting of relative rights, or the granting of any license.  
(3) The products described in this material are intended to be used for standard applications or gen-  
eral electronic equipment (such as office equipment, communications equipment, measuring in-  
struments and household appliances).  
Consult our sales staff in advance for information on the following applications:  
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,  
combustion equipment, life support systems and safety devices) in which exceptional quality and  
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or  
harm the human body.  
Any applications other than the standard applications intended.  
(4) The products and product specifications described in this material are subject to change without  
notice for reasons of modification and/or improvement. At the final stage of your design, purchas-  
ing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to  
make sure that the latest specifications satisfy your requirements.  
(5) When designing your equipment, comply with the guaranteed values, in particular those of maxi-  
mum rating, the range of operating power supply voltage and heat radiation characteristics. Other-  
wise, we will not be liable for any defect which may arise later in your equipment.  
Even when the products are used within the guaranteed values, redundant design is recommended,  
so that such equipment may not violate relevant laws or regulations because of the function of our  
products.  
(6) When using products for which dry packing is required, observe the conditions (including shelf life  
and after-unpacking standby time) agreed upon when specification sheets are individually exchanged.  
(7) No part of this material may be reprinted or reproduced by any means without written permission  
from our company.  
Please read the following notes before using the datasheets  
A. These materials are intended as a reference to assist customers with the selection of Panasonic  
semiconductor products best suited to their applications.  
Due to modification or other reasons, any information contained in this material, such as available  
product types, technical data, and so on, is subject to change without notice.  
Customers are advised to contact our semiconductor sales office and obtain the latest information  
before starting precise technical research and/or purchasing activities.  
B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but  
there is always the possibility that further rectifications will be required in the future. Therefore,  
Panasonic will not assume any liability for any damages arising from any errors etc. that may ap-  
pear in this material.  
C. These materials are solely intended for a customer's individual use.  
Therefore, without the prior written approval of Panasonic, any other use such as reproducing,  
selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited.  
2001 MAR  

相关型号:

2SD1264A

Silicon PNP epitaxial planar type(For power amplification)
PANASONIC

2SD1264A

Silicon NPN Power Transistors
ISC

2SD1264A

Silicon NPN Power Transistors
SAVANTIC

2SD1264A-P

Silicon NPN triple diffusion planar type
PANASONIC

2SD1264AP

TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 2A I(C) | SOT-186
ETC

2SD1264AQ

TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 2A I(C) | SOT-186
ETC

2SD1264P

TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 2A I(C) | SOT-186
ETC

2SD1264Q

TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 2A I(C) | SOT-186
ETC

2SD1265

NPN EPITAXIAL SILICON TRANSISTOR(POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT)
Wing Shing

2SD1265

Silicon NPN Power Transistors
SAVANTIC

2SD1265A

Silicon NPN Power Transistors
SAVANTIC

2SD1265AO

Transistor
PANASONIC