2SD1264/2SD1264A [ETC]
2SD1264. 2SD1264A - NPN Transistor ; 2SD1264 。 2SD1264A - NPN晶体管\n型号: | 2SD1264/2SD1264A |
厂家: | ETC |
描述: | 2SD1264. 2SD1264A - NPN Transistor
|
文件: | 总3页 (文件大小:51K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Power Transistors
2SD1264, 2SD1264A
Silicon NPN triple diffusion planar type
For low-freauency power amplification
Unit: mm
For TV vertical deflection output
10.0±0.2
5.5±0.2
4.2±0.2
Complementary to 2SB0940 (2SB940) and 2SB0940A (2SB940A)
2.7±0.2
Features
High collector to emitter VCEO
■
φ3.1±0.1
●
●
Large collector power dissipation PC
●
Full-pack package which can be installed to the heat sink with
one screw
1.3±0.2
1.4±0.1
+0.2
–0.1
0.5
Absolute Maximum Ratings (T =25˚C)
■
C
0.8±0.1
Parameter
Symbol
Ratings
Unit
2.54±0.25
Collector to base voltage
VCBO
200
V
5.08±0.5
Collector to
2SD1264
150
1
2
3
VCEO
V
emitter voltage 2SD1264A
Emitter to base voltage
Peak collector current
Collector current
180
1:Base
2:Collector
3:Emitter
VEBO
ICP
6
V
A
A
3
TO–220 Full Pack Package(a)
IC
2
Collector power TC=25°C
30
PC
W
dissipation
Ta=25°C
2
Junction temperature
Storage temperature
Tj
150
˚C
˚C
Tstg
–55 to +150
Electrical Characteristics (T =25˚C)
■
C
Parameter
Symbol
ICBO
Conditions
min
typ
max
50
Unit
µA
µA
V
Collector cutoff current
Emitter cutoff current
Collector to base voltage
VCB = 200V, IE = 0
VEB = 4V, IC = 0
C = 50µA, IE = 0
IEBO
50
VCBO
I
200
150
180
6
2SD1264
2SD1264A
Collector to emitter
voltage
VCEO
VEBO
IC = 5mA, IB = 0
V
V
Emitter to base voltage
IE = 500µA, IC = 0
*
hFE1
VCE = 10V, IC = 150mA
VCE = 10V, IC = 400mA
VCE = 10V, IC = 400mA
IC = 500mA, IB = 50mA
VCE = 5V, IC = 0.5A, f = 1MHz
60
240
Forward current transfer ratio
Base to emitter voltage
hFE2
VBE
50
1
1
V
V
Collector to emitter saturation voltage VCE(sat)
Transition frequency
fT
20
MHz
*hFE1 Rank classification
Rank
hFE1
Q
P
60 to 140
100 to 240
Note) The part numbers in the parenthesis show conventional part number.
1
Power Transistors
2SD1264, 2SD1264A
PC — Ta
IC — VCE
IC — VBE
50
1.2
1.0
0.8
0.6
0.4
0.2
0
1.2
TC=25˚C
IB=7mA
(1) TC=Ta
(2) With a 100 × 100 × 2mm
25˚C
Al heat sink
(3) With a 50 × 50 × 2mm
Al heat sink
(4) Without heat sink
(PC=2W)
1.0
0.8
0.6
0.4
0.2
0
40
30
20
10
0
TC=100˚C
–25˚C
6mA
5mA
(1)
(2)
4mA
3mA
2mA
1mA
(3)
(4)
0
20 40 60 80 100 120 140 160
0
4
8
12
16
20
24
0
0.2
0.4
0.6
0.8
1.0
1.2
(
)
( )
V
( )
Base to emitter voltage VBE V
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
VCE(sat) — IC
hFE — IC
fT — IC
10
10000
1000
IC/IB=10
VCE=10V
VCE=5V
f=1MHz
TC=25˚C
3000
300
100
3
1
1000
TC=100˚C
TC=100˚C
25˚C
300
100
30
10
0.3
0.1
25˚C
–25˚C
30
10
3
1
–25˚C
0.03
0.01
3
1
0.3
0.1
0.01
0.03
0.1
0.3
1
0.01 0.03
0.1
0.3
1
3
10
0.01 0.03
0.1
0.3
1
3
10
(
A
)
( )
A
( )
Collector current IC A
Collector current IC
Collector current IC
Area of safe operation (ASO)
Rth(t) — t
10
103
102
10
Non repetitive pulse
TC=25˚C
(1) Without heat sink
(2) With a 100 × 100 × 2mm Al heat sink
ICP
3
1
IC
t=0.5ms
(1)
(2)
5ms
1ms
0.3
0.1
DC
1
0.03
0.01
10–1
10–2
0.003
0.001
1
3
10
30
100 300 1000
10–4
10–3
10–2
10–1
1
10
102
103
104
(
V
)
( )
t s
Collector to emitter voltage VCE
Time
2
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2001 MAR
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