2SD1264A [ISC]

Silicon NPN Power Transistors; 硅NPN功率晶体管
2SD1264A
型号: 2SD1264A
厂家: INCHANGE SEMICONDUCTOR COMPANY LIMITED    INCHANGE SEMICONDUCTOR COMPANY LIMITED
描述:

Silicon NPN Power Transistors
硅NPN功率晶体管

晶体 晶体管
文件: 总4页 (文件大小:103K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SD1264 2SD1264A  
DESCRIPTION  
·
·With TO-220Fa package  
·Complement to type 2SB940/940A  
·High collector to emitter voltage VCEO  
·Large collector power dissipation PC  
APPLICATIONS  
·For power amplification  
·For TV vertical deflection output applications  
PINNING  
PIN  
1
DESCRIPTION  
Base  
2
Collector  
Emitter  
Fig.1 simplified outline (TO-220Fa) and symbol  
3
Absolute maximum ratings(Ta=25)  
SYMBOL  
PARAMETER  
Collector-base voltage  
CONDITIONS  
Open emitter  
VALUE  
UNIT  
VCBO  
200  
V
2SD1264  
150  
VCEO  
Collector-emitter voltage  
Open base  
V
2SD1264A  
180  
VEBO  
IC  
Emitter-base voltage  
Collector current  
Open collector  
6
V
A
A
2
ICM  
Collector current-peak  
3
2
Ta=25  
TC=25℃  
PC  
Collector power dissipation  
W
30  
Tj  
Junction temperature  
Storage temperature  
150  
-55~150  
Tstg  
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SD1264 2SD1264A  
CHARACTERISTICS  
Tj=25unless otherwise specified  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN  
150  
180  
200  
6
TYP.  
MAX  
UNIT  
2SD1264  
VCEO  
Collector-emitter voltage  
IC=5mA ,IB=0  
V
2SD1264A  
VCBO  
VEBO  
VCEsat  
VBE  
Collector-base voltage  
Emitter-base voltage  
IC=50μA ,IE=0  
V
V
IC=500μA ,IC=0  
Collector-emitter saturation voltage  
Base-emitter voltage  
Emitter cut-off current  
Collector cut-off current  
DC current gain  
IC=0.5A, IB=50mA  
IC=0.4A ; VCE=10V  
VEB=4V; IC=0  
1.0  
1.0  
50  
V
V
IEBO  
ICBO  
hFE-1  
hFE-2  
fT  
μA  
μA  
VCB=200V; IE=0  
50  
IC=0.15A ; VCE=10V  
IC=0.4A ; VCE=10V  
IC=0.5A; VCE=10V,f=10MHz  
60  
50  
240  
DC current gain  
Transition frequency  
20  
MHz  
‹ hFE-1 Classifications  
Q
P
60-140  
100-240  
2
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SD1264 2SD1264A  
PACKAGE OUTLINE  
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)  
3
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SD1264 2SD1264A  
4

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