2SC5413 [ETC]
;
| 型号： | 2SC5413 |
| 厂家： | 
ETC |
| 描述： |
|
| 文件： | 总1页 (文件大小：30K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Power Transistors
2SC5413
Silicon NPN triple diffusion mesa type
For horizontal deflection output
Unit: mm
φ 3.3±0.2
5.0±0.3
20.0±0.5
3.0
Features
■
●
High breakdown voltage, and high reliability through the use of a
glass passivation layer
●
High-speed switching
●
1.5
Wide area of safe operation (ASO)
1.5
2.0±0.3
Absolute Maximum Ratings (T =25˚C)
■
C
2.7±0.3
3.0±0.3
Parameter
Symbol
VCBO
VCES
VCEO
VEBO
ICP
Ratings
Unit
V
1.0±0.2
0.6±0.2
Collector to base voltage
1700
1700
V
5.45±0.3
Collector to emitter voltage
10.9±0.5
600
V
Emitter to base voltage
Peak collector current
Collector current
5
V
1:Base
2:Collector
3:Emitter
30
A
1
2
3
IC
20
10
A
TOP–3L Package
Base current
IB
A
Collector power TC=25°C
200
PC
W
dissipation
Ta=25°C
3.5
Junction temperature
Storage temperature
Tj
150
˚C
˚C
Tstg
–55 to +150
Electrical Characteristics (T =25˚C)
■
C
Parameter
Symbol
ICBO
Conditions
min
typ
max
50
1
Unit
µA
V
CB = 1000V, IE = 0
Collector cutoff current
VCB = 1700V, IE = 0
VEB = 5V, IC = 0
mA
µA
Emitter cutoff current
IEBO
hFE
50
14
3
Forward current transfer ratio
VCE = 5V, IC = 10A
7
Collector to emitter saturation voltage VCE(sat)
Base to emitter saturation voltage VBE(sat)
IC = 10A, IB = 2.8A
IC = 10A, IB = 2.8A
VCE = 10V, IC = 0.1A, f = 0.5MHz
V
V
1.5
Transition frequency
Storage time
fT
tstg
tf
3
MHz
µs
4.0
0.3
IC = 12A, IB1 = 2.4A, IB2 = –4.8A
Fall time
µs
1
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