2SC5414AF [ONSEMI]
TRANSISTOR,BJT,NPN,12V V(BR)CEO,100MA I(C),TO-92;
| 型号： | 2SC5414AF |
| 厂家： | 
ONSEMI |
| 描述： | TRANSISTOR,BJT,NPN,12V V(BR)CEO,100MA I(C),TO-92 |
| 文件： | 总6页 (文件大小：48K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA1081
SANYO Sem iconductors
DATA S HEET
NPN Epitaxial Planar Silicon Transistor
High-Frequency Low-Noise
Amplifier Applications
2SC5414A
Features
: ⏐S21e⏐2=9.5dB typ (f=1GHz).
•
High gain
•
High cut-off frequency : f =6.7GHz typ.
T
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Symbol
Conditions
Ratings
Unit
V
V
V
V
20
12
CBO
CEO
EBO
V
2
V
I
100
400
150
mA
mW
°C
°C
C
Collector Dissipation
P
C
Junction Temperature
Storage Temperature
Tj
Tstg
--55 to +150
Electrical Characteristics at Ta=25°C
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
1.0
Collector Cutoff Current
Emitter Cutoff Current
I
I
V
V
V
V
=10V, I =0A
μA
μA
CBO
CB
EB
CE
CE
E
=1V, I =0A
10
EBO
C
h
h
1
2
=5V, I =30mA
90*
70
270*
FE
C
DC Current Gain
=5V, I =70mA
FE
C
Continued on next page.
* : The 2SC5414A is classified by 30mA hFE as follows :
Rank
E
F
h
FE
90 to 180
135 to 270
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
equipment.
's products or
www.semiconductor-sanyo.com/network
93009AB TK IM TC-00002103
No. A1081-1/6
2SC5414A
Continued from preceding page.
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
Gain-Bandwidth Product
Output Capacitance
f
V
CE
V
CB
V
CB
V
CE
V
CE
=5V, I =30mA
C
5
8
6.7
GHz
pF
T
Cob
Cre
=5V, f=1MHz
=5V, f=1MHz
1.0
1.5
Reverse Transfer Capacitance
Forward Transfer Gain
Noise Figure
0.6
pF
2
⏐
S21e
=5V, I =30mA, f=1GHz
9.5
dB
⏐
C
NF
=5V, I =7mA, f=1GHz
1.1
2.0
dB
C
Package Dimensions
unit : mm (typ)
7522-003
5.0
4.0
4.0
0.45
0.5
0.45
0.44
1
2
3
1 : Base
2 : Emitter
3 : Collector
SANYO : NP
1.3
1.3
I
-- V
I
-- V
C BE
C
CE
100
50
40
30
20
80
60
40
10
0
20
0
0.05mA
I =0mA
B
0
0.2
0.4
0.6
0.8
1.0
1.2
IT13393
0
2
4
6
8
10
IT13392
Collector-to-Emitter Voltage, V
CE
-- V
Base-to-Emitter Voltage, V
-- V
BE
No. A1081-2/6
2SC5414A
h
FE
-- I
f
-- I
C
C
T
10
7
5
7
3
2
2V
5
2V
100
3
2
7
5
3
2
10
1.0
3
7
7
0
5
7
2
3
5
7
2
3
5
7
100
2
3
2
3
5
7
2
3
5
7
1.0
10
1.0
10
100
IT13401
Collector Current, I -- mA
IT13394
Collector Current, I -- mA
C
Cob -- V C
CB
Cre -- V
CB
10
10
f=1MHz
f=1MHz
7
7
5
5
3
2
3
2
1.0
1.0
7
5
7
5
3
2
3
2
0.1
0.1
2
3
5
7
2
3
5
7
2
3
7
2
3
5
7
2
3
5
7
10
2
3
0.1
1.0
10
0.1
1.0
Collector-to-Base Voltage, V
-- V
Collector-to-Base Voltage, V
-- V
IT13396
IT13397
CB
CB
2
NF -- I
C
S21e
-- I
⏐
⏐
C
10
8
12
10
8
f=1GHz
f=1GHz
2V
6
6
4
4
2
0
2
0
2
3
5
7
2
3
5
7
7
2
3
5
7
2
3
5
7
100
1.0
10
100
IT13399
1.0
10
Collector Current, I -- mA
Collector Current, I -- mA
C
IT13402
C
P
-- Ta
C
500
400
300
200
100
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
IT13403
No. A1081-3/6
2SC5414A
S Parameters (Common emitter)
V
V
V
V
=2V, I =5mA, Z =50Ω
CE
C
O
Freq(MHz)
100
S
∠S11
--46.1
--80.1
--123.7
--153.8
--177.9
160.9
140.4
122.6
103.9
89.0
S
∠S21
142.7
117.8
90.2
72.4
58.0
45.5
32.7
21.5
10.3
--0.1
--10.3
S
∠S12
66.1
53.1
44.6
42.2
39.3
35.7
31.0
26.0
20.5
14.4
7.7
S
⏐
22
∠S22
--25.4
--39.5
--51.7
--58.8
--66.4
--74.1
--82.5
--90.9
--99.8
--108.3
--117.5
⏐
⏐
⏐
⏐
⏐
⏐
⏐
11
21
12
0.789
0.604
0.404
0.331
0.297
0.281
0.275
0.277
0.281
0.295
0.314
12.790
9.631
5.802
4.101
3.180
2.642
2.254
1.983
1,787
1.626
1.511
0.041
0.063
0.090
0.112
0.137
0.163
0.190
0.218
0.247
0.278
0.311
0.870
0.691
0.510
0.444
0.419
0.413
0.410
0.405
0.395
0.390
0.380
200
400
600
800
1000
1200
1400
1600
1800
2000
73.5
=2V, I =10mA, Z =50Ω
CE
C
O
Freq(MHz)
100
S
∠S11
--60.1
--95.8
--138.8
--168.0
170.3
150.3
130.3
113.3
96.2
S
∠S21
131.8
107.7
84.2
69.1
56.2
44.5
32.5
21.6
11.2
1.2
S
∠S12
63.1
55.5
53.2
50.5
45.7
40.1
30.9
27.0
20.1
13.0
5.5
S
⏐ ⏐
22
∠S22
--33.9
--45.7
--53.9
--59.7
--67.3
--75.3
--86.7
--92.3
--101.1
--109.7
--118.6
⏐
⏐
⏐
⏐
⏐
⏐
11
21
12
0.638
0.438
0.289
0.245
0.227
0.221
0.215
0.218
0.231
0.243
0.267
18.641
12.165
6.728
4.654
3.575
2.950
2.520
2.203
1.978
1.805
1.668
0.036
0.054
0.083
0.113
0.146
0.177
0.221
0.240
0.272
0.304
0.336
0.754
0.549
0.392
0.348
0.336
0.335
0.332
0.331
0.320
0.314
0.306
200
400
600
800
1000
1200
1400
1600
1800
2000
80.8
66.9
--8.9
=2V, I =20mA, Z =50Ω
CE
C
O
Freq(MHz)
100
S
∠S11
--75.8
--113.1
--155.0
178.6
158.2
139.7
121.4
105.8
89.2
S
∠S21
121.7
100.3
80.3
66.5
54.3
43.4
32.0
21.3
11.2
1.5
S
∠S12
62.9
61.2
59.5
55.1
49.1
42.4
34.9
27.5
20.1
12.5
4.6
S
⏐ ⏐
22
∠S22
--40.4
--48.3
--53.3
--59.0
--67.1
--75.4
--84.4
--93.3
--102.3
--111.0
--120.0
⏐
⏐
⏐
⏐
⏐
⏐
11
21
12
0.476
0.317
0.227
0.206
0.195
0.194
0.198
0.204
0.213
0.230
0.252
22.939
13.544
7.193
4.913
3.764
3.091
2.632
2.305
2.066
1.881
1.742
0.031
0.047
0.081
0.116
0.151
0.186
0.220
0.253
0.285
0.318
0.350
0.633
0.427
0.319
0.293
0.289
0.291
0.294
0.290
0.281
0.275
0.264
200
400
600
800
1000
1200
1400
1600
1800
2000
75.2
62.9
--8.4
=2V, I =30mA, Z =50Ω
CE
C
O
Freq(MHz)
100
S
∠S11
--88.7
--126.8
--167.6
169.3
151.0
134.3
117.8
103.1
87.6
S
∠S21
116.6
96.9
78.2
65.0
52.8
42.2
30.8
20.4
10.3
0.3
S
∠S12
63.5
63.7
61.5
56.8
50.3
43.2
35.5
27.9
20.3
12.6
4.5
S
⏐
22
∠S22
--42.5
--47.5
--51.3
--57.2
--66.0
--74.9
--84.2
--93.2
--102.4
--111.2
--120.5
⏐
⏐
⏐
⏐
⏐
⏐
⏐
11
21
12
0.403
0.284
0.228
0.217
0.213
0.211
0.216
0.222
0.238
0.248
0.271
23.847
13.541
7.074
4.827
3.687
3.034
2.579
2.262
2.029
1.840
1.706
0.028
0.045
0.081
0.116
0.153
0.188
0.223
0.256
0.289
0.321
0.354
0.561
0.380
0.295
0.275
0.276
0.281
0.283
0.280
0.271
0.265
0.254
200
400
600
800
1000
1200
1400
1600
1800
2000
74.2
61.6
--9.7
No. A1081-4/6
2SC5414A
S Parameters (Common emitter)
V
V
V
V
=5V, I =5mA, Z =50Ω
CE
C
O
Freq(MHz)
100
S
∠S11
--41.4
--72.5
--114.4
--144.0
--169.8
168.7
146.1
125.8
105.7
88.5
S
∠S21
145.1
120.7
92.5
74.9
60.3
47.9
35.3
24.0
13.1
3.1
S
∠S12
68.1
55.7
47.6
45.2
42.9
39.8
35.8
31.3
26.4
21.0
14.8
S
⏐
22
∠S22
--20.6
--32.3
--42.7
--49.4
--56.8
--64.6
--72.6
--80.8
--89.1
--97.2
--106.0
⏐
⏐
⏐
⏐
⏐
⏐
⏐
11
21
12
0.807
0.627
0.399
0.314
0.266
0.242
0.230
0.227
0.237
0.249
0.273
12.983
10.034
6.208
4.422
3.425
2.831
2.422
2.121
1.902
1.725
1.595
0.032
0.052
0.074
0.093
0.115
0.137
0.161
0.186
0.212
0.240
0.271
0.899
0.748
0.590
0.532
0.514
0.512
0.510
0.508
0.504
0.501
0.497
200
400
600
800
1000
1200
1400
1600
1800
2000
72.7
--7.2
=5V, I =10mA, Z =50Ω
CE
C
O
Freq(MHz)
100
S
∠S11
--52.5
--85.2
--124.5
--153.2
--178.9
159.7
135.8
115.9
95.5
S
∠S21
134.9
110.4
86.3
70.9
58.1
46.8
35.0
24.3
14.0
4.1
S
∠S12
65.7
58.6
55.5
53.3
48.7
43.8
37.8
31.8
25.5
19.0
12.0
S
⏐ ⏐
22
∠S22
--26.7
--36.3
--42.7
--48.6
--56.0
--64.0
--72.4
--80.6
--88.9
--96.9
--105.3
⏐
⏐
⏐
⏐
⏐
⏐
11
21
12
0.664
0.450
0.264
0.206
0.175
0.163
0.156
0.158
0.174
0.188
0.212
19.156
13.004
7.320
5.075
3.884
3.190
2.715
2.376
2.127
1.938
1.788
0.029
0.044
0.069
0.095
0.122
0.150
0.178
0.204
0.233
0.262
0.292
0.807
0.621
0.490
0.450
0.444
0.446
0.446
0.448
0.439
0.434
0.431
200
400
600
800
1000
1200
1400
1600
1800
2000
77.7
62.7
--5.6
=5V, I =30mA, Z =50Ω
CE
C
O
Freq(MHz)
100
S
∠S11
--71.0
--103.4
--145.0
173.2
161.6
140.1
117.4
98.0
S
∠S21
120.2
99.6
80.5
67.5
55.9
45.4
34.2
24.3
14.2
4.9
S
∠S12
66.3
65.6
63.8
59.1
53.1
46.5
39.4
32.5
25.3
18.2
10.7
S
⏐ ⏐
22
∠S22
--32.7
--36.2
--39.6
--45.9
--54.2
--62.7
--71.8
--80.2
--88.6
--96.9
--105.3
⏐
⏐
⏐
⏐
⏐
⏐
11
21
12
0.423
0.258
0.155
0.129
0.119
0.116
0.119
0.129
0.146
0.160
0.187
26.259
15.300
8.070
5.493
4.203
3.436
2.914
2.545
2.284
2.064
1.913
0.024
0.038
0.068
0.098
0.129
0.160
0.190
0.219
0.249
0.278
0.308
0.647
0.482
0.405
0.388
0.390
0.396
0.401
0.398
0.393
0.389
0.386
200
400
600
800
1000
1200
1400
1600
1800
2000
79.7
65.1
54.4
--4.9
=5V, I =50mA, Z =50Ω
CE
C
O
Freq(MHz)
100
S
∠S11
--82.7
--120.2
--164.6
170.5
149.4
130.7
112.8
96.6
S
∠S21
114.6
95.9
78.0
64.8
52.8
41.9
31.0
20.5
10.1
0.1
S
∠S12
65.6
65.8
64.0
59.6
53.5
47.1
39.8
32.9
25.9
18.8
11.1
S
⏐
22
∠S22
--32.2
--34.5
--38.7
--46.0
--54.9
--63.5
--72.9
--81.5
--90.3
--98.2
--106.2
⏐
⏐
⏐
⏐
⏐
⏐
⏐
11
21
12
0.381
0.251
0.185
0.174
0.163
0.167
0.176
0.184
0.197
0.214
0.243
25.958
14.443
7.561
5.153
3.904
3.194
2.696
2.358
2.115
1.908
1.766
0.023
0.037
0.067
0.096
0.127
0.157
0.187
0.216
0.246
0.275
0.305
0.611
0.465
0.405
0.396
0.401
0.406
0.410
0.409
0.404
0.400
0.392
200
400
600
800
1000
1200
1400
1600
1800
2000
80.7
68.1
55.0
--9.6
No. A1081-5/6
2SC5414A
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
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without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s
intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of September, 2009. Specifications and information herein are subject
to change without notice.
No. A1081-6/6
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