2SC3279M [ETC]
BJT ; BJT\n
ETC 
M C C
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2SC3279
Features
·
High DC Current Gain and excellent hFE Linearity
hFE(1) =140-600 (VCE=1.0V, IC=0.5A)
hFE(2) =70 (Min.), 200 (Typ.) (VCE=1.0V, IC=2.0A)
NPN Silicon
Epitaxial Transistors
Pin Configuration
Bottom View
E
C
B
TO-92
A
E
Maximum Ratings
Symbol
VCEO
Rating
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - DC
Pulsed (1)
Rating
10
30
30
6.0
Unit
V
V
V
V
VCES
VCBO
VEBO
B
2.0
5.0
IC
A
IB
PC
TJ
Base Current
0.2
750
-55 to +150
-55 to +150
A
Collector power dissipation
Junction Temperature
Storage Temperature
W
OC
OC
C
TSTG
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Typ
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)EBO
ICBO
Collector-Emitter Voltage
10
---
---
Vdc
(I =10mAdc, IB=0)
C
D
Collector-Emitter Voltage
6.0
---
---
---
---
Vdc
(I =1.0mAdc, IC=0)
E
Collector Cutoff Current
0.1
uAdc
(VCB=30Vdc,I =0)
E
IEBO
Emitter Cutoff Current
---
---
0.1
uAdc
(VEB=6.0Vdc, I =0)
C
ON CHARACTERISTICS
G
hFE(1)
hFE(2)
VCE(sat)
VBE
DC Current Gain(2)
---
---
(I =0.5Adc, VCE=1.0Vdc)
DC Current Gain
140
70
---
---
---
---
---
200
0.2
600
---
C
DIMENSIONS
(I =2.0Adc, VCE=1.0Vdc)
INCHES
MIN
.175
MM
MIN
C
DIM
A
MAX
MAX
4.70
4.70
---
NOTE
Collector Saturation Voltage
(I =2.0Adc, I =50mAdc)
.185
.185
---
4.45
4.46
12.7
0.41
3.43
2.42
Vdc
Vdc
MHz
pF
0.5
1.5
---
C
B
B
C
.175
.500
Base Saturation Voltage
D
.016
.020
.145
.105
0.63
3.68
2.67
(I =2.0Adc, VCE=1.0Vdc)
0.86
150
27
C
E
G
.135
.095
fT
Transition Frequency
(VCE=1.0Vdc, I =0.5Adc)
C
Cob
Collector Output Capacitance
(VCB=10Vdc, I =0, f=1.0MHz)
---
E
(1) Pulse Width=10 ms (Max.), Duty Cycle=30% (Max.)
(2) hFE(1) Classification L: 140-240, M: 200-330, N: 300-450, P: 420-600
www.mccsemi.com
M C C
2SC3279
www.mccsemi.com
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