2SC3279_11 [SECOS]

NPN Plastic Encapsulated Transistor; NPN塑料封装晶体管
2SC3279_11
型号: 2SC3279_11
厂家: SECOS HALBLEITERTECHNOLOGIE GMBH    SECOS HALBLEITERTECHNOLOGIE GMBH
描述:

NPN Plastic Encapsulated Transistor
NPN塑料封装晶体管

晶体 晶体管
文件: 总2页 (文件大小:293K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
2SC3279  
2A , 30V  
NPN Plastic Encapsulated Transistor  
Elektronische Bauelemente  
RoHS Compliant Product  
A suffix of “-C” specifies halogen & lead-free  
TO-92  
FEATURES  
High DC current gain and excellent hFE linearity.  
Low saturation voltage.  
G
H
1Emitter  
2Collector  
3Base  
J
B
CLASSIFICATION OF hFE  
A
D
Millimeter  
REF.  
Product-Rank 2SC3279-L 2SC3279-M 2SC3279-N 2SC3279-P  
Min.  
4.40  
4.30  
12.70  
3.30  
0.36  
0.36  
Max.  
4.70  
4.70  
-
3.81  
0.56  
0.51  
A
B
C
D
E
F
Range 140~240 200~330 300~450 420~600  
K
G
H
J
1.27 TYP.  
E
C
F
1.10  
2.42  
0.36  
-
2.66  
0.76  
K
Collector  
2
3
Base  
1
Emitter  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)  
Parameter  
Symbol  
Rating  
Unit  
Collector to Base Voltage  
VCBO  
VCEO  
VEBO  
IC  
30  
V
V
Collector to Emitter Voltage  
Emitter to Base Voltage  
10  
6
V
Collector Current - Continuous  
Collector Power Dissipation  
Junction, Storage Temperature  
2
A
PC  
0.75  
W
°C  
TJ, TSTG  
150, -55~150  
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)  
Parameter  
Symbol  
Min.  
Typ. Max.  
Unit  
Test Conditions  
Collector to Base Breakdown Voltage  
Collector to Emitter Breakdown Voltage  
Emitter to Base Breakdown Voltage  
Collector Cut – Off Current  
Emitter Cut – Off Current  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
30  
-
-
-
V
V
IC=1mA, IE=0  
10  
-
IC=10mA, IB=0  
IE=1mA, IC=0  
6
-
-
V
-
-
0.1  
0.1  
600  
0.82  
1.5  
-
µA  
µA  
VCB=30V, IE=0  
IEBO  
-
-
-
VEB=6V, IC=0  
DC Current Gain  
hFE  
140  
VCE=1V, IC=500mA  
IC=2A, IB=100mA  
VCE=1V, IC=2A  
VCB=10V, IE=0, f=1MHz  
Collector to Emitter Saturation Voltage  
Base to Emitter voltage  
VCE(sat)  
VBE  
-
-
-
-
-
V
V
-
Collector Output Capacitance  
Transition Frequency  
Cob  
27  
150  
pF  
fT  
-
MHz VCE=1V, IC=0.5A  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
18-Feb-2011 Rev. B  
Page 1 of 2  
2SC3279  
2A , 30V  
NPN Plastic Encapsulated Transistor  
Elektronische Bauelemente  
CHARACTERISTIC CURVES  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
18-Feb-2011 Rev. B  
Page 2 of 2  

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