2N5302/D [ETC]
High-Power NPN Silicon Transistor ; 高功率NPN硅晶体管
| 型号： | 2N5302/D |
| 厂家： | 
ETC |
| 描述： | High-Power NPN Silicon Transistor
|
| 文件： | 总8页 (文件大小：118K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ON Semiconductort
High-Power NPN Silicon
Transistor
2N5302
. . . for use in power amplifier and switching circuits applications.
• Low Collector–Emitter Saturation Voltage –
30 AMPERE
POWER TRANSISTOR
NPN SILICON
60 VOLTS
V
CE(sat)
= 0.75 Vdc (Max) @ I = 10 Adc
C
200 WATTS
*MAXIMUM RATINGS
Rating
Symbol
2N5302
60
Unit
Vdc
Vdc
Adc
Adc
Collector–Emitter Voltage
Collector–Base Voltage
Collector Current – Continuous
Base Current
V
CEO
V
CB
60
I
C
30
I
B
7.5
CASE 1–07
TO–204AA
(TO–3)
Total Device Dissipation @ T = 25_C
P
200
1.14
Watts
W/_C
_C
C
D
Derate above 25_C
Operating and Storage Junction
Temperature Range
T , T
J
–65 to +200
stg
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
0.875
34
Unit
_C/W
_C/W
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Ambient
*Indicates JEDEC Registered Data.
θ
JC
θ
CA
T
A
T
C
8.0 200
6.0 150
4.0 100
2.0 50
T
C
T
A
0
0
0
20
40
60
80
100 120 140 160 180 200
TEMPERATURE (°C)
Figure 1. Power Temperature Derating Curve
Semiconductor Components Industries, LLC, 2001
1
Publication Order Number:
May, 2001 – Rev. 0
2N5302/D
2N5302
ELECTRICAL CHARACTERISTICS (T = 25_C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
*OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (Note 1)
V
Vdc
CEO(sus)
(I = 200 mAdc, I = 0)
60
–
–
C
B
Collector Cutoff Current
(V = 60 Vdc, I = 0)
I
mAdc
mAdc
mAdc
mAdc
mAdc
CEO
5.0
1.0
10
CE
B
Collector Cutoff Current
(V = 60 Vdc, V
I
I
CEX
CEX
CBO
= 1.5 Vdc)
EB(off)
–
CE
Collector Cutoff Current
(V = 60 Vdc, V
= 1.5 Vdc, T = 150_C)
–
CE
EB(off)
C
Collector Cutoff Current
I
(V = 80 Vdc, I = 0)
–
–
1.0
5.0
CB
E
Emitter Cutoff Current (V = 5.0 Vdc, I = 0)
I
EBO
BE
C
ON CHARACTERISTICS
DC Current Gain (Note 1)
*(I = 1.0 Adc, V = 2.0 Vdc)
h
FE
–
C
CE
40
15
5.0
–
60
–
*(I = 15 Adc, V = 2.0 Vdc)
C
CE
*(I = 30 Adc, V = 4.0 Vdc)
C
CE
*Collector–Emitter Saturation Voltage (Note 1)
(I = 10 Adc, I = 1.0 Adc)
V
V
Vdc
Vdc
Vdc
CE(sat)
BE(sat)
–
–
–
C
B
0.75
2.0
3.0
(I = 20 Adc, I = 2.0 Adc)2
C
B
(I = 30 Adc, I = 6.0 Adc)
C
B
*Base Emitter Saturation Voltage (Note 1)
(I = 10 Adc, I = 1.0 Adc)
–
–
–
C
B
1.7
1.8
2.5
(I = 15 Adc, I = 1.5 Adc)
C
B
(I = 20 Adc, I = 2.0 Adc)
C
B
*Base–Emitter On Voltage (Note 1)
(I = 15 Adc, V = 2.0 Vdc)
V
BE(on)
–
–
1.7
3.0
C
CE
(I = 30 Adc, V = 4.0 Vdc)
C
CE
*DYNAMIC CHARACTERISTICS
Current–Gain – Bandwidth Product (I = 1.0 Adc, V = 10 Vdc, f = 1.0 MHz)
f
T
2.0
40
–
–
MHz
–
C
CE
Small–Signal Current Gain (I = 1.0 Adc, V = 10 Vdc, f = 1.0 kHz)
h
fe
C
*SWITCHING CHARACTERISTICS
Rise Time
CE
t
r
–
–
–
1.0
2.0
1.0
µs
µs
µs
Storage Time
Fall Time
t
s
(V = 30 Vdc, I = 10 Adc, I = I = 1.0 Adc)
CC
C
B1
B2
t
f
*Indicates JEDEC Registered Data.
Note 1: Pulse Width v 300 µs, Duty Cycle v 2.0%.
SWITCHING TIME EQUIVALENT TEST CIRCUITS
INPUT PULSE
Ăt ≤ 20 ns
ĂPW = 10 to 100 µs
ĂDUTY CYCLE = 2.0%
V
INPUT PULSE
Ăt ≤ 20 ns
ĂPW = 10 to 100 µs
ĂDUTY CYCLE = 2.0%
CC
r
V
CC
+ā30 V
r
+ā30 V
3.0
3.0
+11 V
0
+11 V
TO
SCOPE
10
TO
SCOPE
10
t ≤ 20 ns
r
t ≤ 20 ns
r
-ā2.0 V
D
-ā9.0 V
V
BB
= 7.0 V
Figure 2. Turn–On time
Figure 3. Turn–Off time
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2
2N5302
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
P
(pk)
θ
θ
(t) = r(t) θ
JC
= 0.875°C/W MAX
JC
0.1
JC
0.05
0.07
0.05
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
0.02
0.01
t
1
0.03
0.02
1
t
2
T
- T = P
C
θ (t)
J(pk)
(pk) JC
SINGLE PULSE
DUTY CYCLE, D = t /t
1 2
0.01
0.02
0.03 0.05 0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
20 30
50
100
200 300 500
1000 2000
t, TIME (ms)
Figure 4. Thermal Response
100
3000
2000
50
100 µs
T = 25°C
J
20
10
1000
500
5.0 ms
5302
C
ib
5.0
2.0
dc
1.0 ms
T = 200°C
J
Secondary Breakdown Limited
Bonding Wire Limited
C
ob
1.0
0.5
T = 25°C
C
300
200
Thermal Limitations
Pulse Duty Cycle ≤ 10%
2N5302
0.2
0.1
100
1.0
2.0 3.0
5.0
10
20 30
50
100
0.5
1.0
2.0 3.0
5.0 7.0 10
20 30
50
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
V , REVERSE VOLTAGE (VOLTS)
R
Figure 5. Active–Region Safe Operating Area
Figure 6. Capacitance versus Voltage
3.0
5.0
T = 25°C
J
3.0
2.0
T = 25°C
I
= I
B1 B2
I /I = 10
J
I /I = 10
C B
C B
t ′
s
t ′ ≈ t - 1/8 t
s
s
f
1.0
0.7
0.5
1.0
0.7
0.5
t @ V = 30 V
r CC
t @ V = 30 V
f CC
0.3
0.2
0.3
t @ V = 10 V
f CC
t @ V = 10 V
r CC
0.1
t @ V = 2.0 V
d OB
0.07
0.05
0.1
0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0
10
20 30
0.03 0.05 0.1
0.3 0.5
1.0 3.0 5.0
10
30
I , COLLECTOR CURRENT (AMP)
C
I , COLLECTOR CURRENT (AMP)
C
Figure 7. Turn–On Time
Figure 8. Turn–Off Time
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3
2N5302
300
200
2.0
V
V
= 10 V
= 2.0 V
CE
T = 175°C
J
T = 25°C
J
CE
1.6
1.2
0.8
0.4
0
I
C
= 2.0 A 5.0 A
10 A
20 A
25°C
100
70
50
-ā55°C
30
20
10
0.03 0.05 0.1 0.3 0.5
1.0 3.0 5.0
10
30
0.01 0.02
0.05 0.1 0.2
0.5
1.0 2.0
5.0
10
I , COLLECTOR CURRENT (AMP)
C
I , BASE CURRENT (AMP)
B
Figure 9. DC Current Gain
Figure 10. Collector Saturation Region
8
7
10
2.0
1.8
V
CE
= 30 V
T = 25°C
J
10
1.6
1.4
1.2
1.0
0.8
I
= 10 x I
CES
C
6
5
4
3
2
10
10
10
10
10
I
C
= 2 x I
CES
I
C
≈ I
CES
V
V
@ I /I = 10
C B
BE(sat)
0.6
0.4
0.2
0
V
@ V = 2.0 V
CE
BE(on)
CE(sat)
TYPICAL I
VALUES OBTAINED
CES
FROM FIGURE 13
@ I /I = 10
C B
0
20
40
60
80 100 120 140 160 180 200
0.03 0.05 0.1 0.3
0.5
1.0 3.0 5.0
10
30
T , JUNCTION TEMPERATURE (°C)
J
I , COLLECTOR CURRENT (AMP)
C
Figure 11. Effects of Base–Emitter Resistance
Figure 12. “On” Voltages
3
2
1
0
10
10
10
10
+ā2.5
+ā2.0
+ā1.5
+ā1.0
+ā0.5
0
V
CE
= 30 V
T = -ā55°C to +175°C
J
T = 175°C
J
h
FEĂ
@ĂV
+Ă 2.0ĂV
CEĂ
2
*APPLIES FOR I /I
<
C B
100°C
25°C
*θV for V
C
CE(sat)
I
C
= I
CES
-ā0.5
-ā1.0
-1
10
10
-ā2
θV for V
-ā1.5
-ā2.0
-ā2.5
B
BE(sat)
REVERSE
FORWARD
-ā3
10
-ā0.4 -ā0.3 -ā0.2 -ā0.1
0
0.1 0.2 0.3 0.4
0.5 0.6
0.03 0.05 0.1 0.3 0.5
1.0 3.0 5.0
10
30
V
BE
, BASE-EMITTER VOLTAGE (VOLTS)
I , COLLECTOR CURRENT (AMP)
C
Figure 13. Collector Cut–Off Region
Figure 14. Temperature Coefficients
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4
2N5302
PACKAGE DIMENSIONS
TO–204 (TO–3)
CASE 1–07
ISSUE Z
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
A
N
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO-204AA OUTLINE SHALL APPLY.
C
SEATING
PLANE
–T–
E
INCHES
DIM MIN MAX
1.550 REF
MILLIMETERS
K
D 2 PL
MIN
MAX
A
B
C
D
E
G
H
K
L
39.37 REF
M
M
M
Y
0.13 (0.005)
T
Q
---
0.250
0.038
0.055
1.050
---
6.35
0.97
1.40
26.67
8.51
1.09
1.77
0.335
0.043
0.070
U
–Y–
L
V
H
0.430 BSC
0.215 BSC
0.440 0.480
0.665 BSC
10.92 BSC
5.46 BSC
11.18 12.19
16.89 BSC
2
1
B
G
N
Q
U
V
---
0.151
1.187 BSC
0.830
0.165
---
3.84
21.08
4.19
30.15 BSC
0.131
0.188
3.33
4.77
–Q–
0.13 (0.005)
M
M
Y
T
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5
2N5302
Notes
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6
2N5302
Notes
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7
2N5302
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2N5302/D
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