2N5302G [ONSEMI]
High−Power NPN Silicon Transistor; 高功率NPN硅晶体管
| 型号： | 2N5302G |
| 厂家： | 
ONSEMI |
| 描述： | High−Power NPN Silicon Transistor |
| 文件： | 总5页 (文件大小：93K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N5302
High−Power NPN Silicon
Transistor
High−power NPN silicon transistors are for use in power amplifier
and switching circuits applications.
Features
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• Low Collector−Emitter Saturation Voltage −
V
CE(sat)
= 0.75 Vdc (Max) @ I = 10 Adc
C
30 AMPERES
POWER TRANSISTOR
NPN SILICON
• Pb−Free Package is Available*
MAXIMUM RATINGS (Note 1) (T = 25°C unless otherwise noted)
J
60 VOLTS, 200 WATTS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Collector Current − Continuous (Note 2)
Base Current
Symbol
Value
60
Unit
Vdc
Vdc
Adc
Adc
V
CEO
V
60
CB
I
30
C
B
I
7.5
Total Device Dissipation @ T = 25_C
P
200
1.14
W
C
D
Derate above 25_C
W/_C
_C
Operating and Storage Junction
Temperature Range
T , T
J
–65 to +200
stg
TO−204AA (TO−3)
CASE 1−07
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
0.875
34
Unit
_C/W
_C/W
STYLE 1
Thermal Resistance, Junction−to−Case
Thermal Resistance, Case−to−Ambient
q
JC
q
CA
MARKING DIAGRAM
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC Registered Data.
2. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
2N5302G
AYYWW
MEX
T
T
C
8.0 200
A
6.0 150
T
C
4.0 100
2.0 50
T
A
2N5302 = Device Code
G
A
YY
WW
MEX
= Pb−Free Package
= Location Code
= Year
= Work Week
= Country of Origin
0
0
0
20
40
60
80
100 120 140 160 180 200
ORDERING INFORMATION
TEMPERATURE (°C)
Device
Package
Shipping
Figure 1. Power Temperature Derating Curve
2N5302
TO−204
100 Units/Tray
100 Units/Tray
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
2N5302G
TO−204
(Pb−Free)
©
Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
March, 2006− Rev. 2
2N5302/D
−2.0 V
2N5302
ELECTRICAL CHARACTERISTICS (T = 25_C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS (Note 3)
Collector−Emitter Sustaining Voltage (Note 4)
V
Vdc
CEO(sus)
(I = 200 mAdc, I = 0)
60
−
−
C
B
Collector Cutoff Current
(V = 60 Vdc, I = 0)
I
mAdc
mAdc
mAdc
mAdc
mAdc
CEO
5.0
1.0
10
CE
B
Collector Cutoff Current
(V = 60 Vdc, V
I
I
CEX
CEX
CBO
EBO
= 1.5 Vdc)
EB(off)
−
CE
Collector Cutoff Current
(V = 60 Vdc, V
= 1.5 Vdc, T = 150_C)
−
CE
EB(off)
C
Collector Cutoff Current
I
I
(V = 80 Vdc, I = 0)
−
−
1.0
5.0
CB
E
Emitter Cutoff Current (V = 5.0 Vdc, I = 0)
BE
C
ON CHARACTERISTICS
DC Current Gain (Note 4)
*(I = 1.0 Adc, V = 2.0 Vdc)
h
FE
−
C
CE
40
15
5.0
−
60
−
*(I = 15 Adc, V = 2.0 Vdc)
C
CE
*(I = 30 Adc, V = 4.0 Vdc)
C
CE
*Collector−Emitter Saturation Voltage (Note 4)
(I = 10 Adc, I = 1.0 Adc)
V
V
Vdc
Vdc
Vdc
CE(sat)
BE(sat)
−
−
−
C
B
0.75
2.0
3.0
(I = 20 Adc, I = 2.0 Adc)2
C
B
(I = 30 Adc, I = 6.0 Adc)
C
B
*Base Emitter Saturation Voltage (Note 4)
(I = 10 Adc, I = 1.0 Adc)
−
−
−
C
B
1.7
1.8
2.5
(I = 15 Adc, I = 1.5 Adc)
C
B
(I = 20 Adc, I = 2.0 Adc)
C
B
*Base−Emitter On Voltage (Note 4)
(I = 15 Adc, V = 2.0 Vdc)
V
BE(on)
−
−
1.7
3.0
C
CE
(I = 30 Adc, V = 4.0 Vdc)
C
CE
DYNAMIC CHARACTERISTICS (Note 3)
Current−Gain − Bandwidth Product (I = 1.0 Adc, V = 10 Vdc, f = 1.0 MHz)
f
T
2.0
40
−
−
MHz
−
C
CE
Small−Signal Current Gain (I = 1.0 Adc, V = 10 Vdc, f = 1.0 kHz)
h
fe
C
CE
SWITCHING CHARACTERISTICS (Note 3)
Rise Time
t
−
−
−
1.0
2.0
1.0
ms
ms
ms
r
Storage Time
Fall Time
(V = 30 Vdc, I = 10 Adc, I = I = 1.0 Adc)
t
CC
C
B1
B2
s
t
f
3. Indicates JEDEC Registered Data.
4. Pulse Width v 300 ms, Duty Cycle v 2.0%.
SWITCHING TIME EQUIVALENT TEST CIRCUITS
V
CC
INPUT PULSE
ꢀt ≤ 20 ns
V
INPUT PULSE
ꢀt ≤ 20 ns
+ꢁ30 V
CC
+ꢁ30 V
r
ꢀPW = 10 to 100 ms
ꢀDUTY CYCLE = 2.0%
r
ꢀPW = 10 to 100 ms
ꢀDUTY CYCLE = 2.0%
3.0
3.0
+11 V
0
+11 V
TO
SCOPE
10
TO
SCOPE
10
t ≤ 20 ns
r
t ≤ 20 ns
r
D
−ꢁ9.0 V
V
= 7.0 V
BB
Figure 2. Turn−On time
Figure 3. Turn−Off time
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2
2N5302
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
P
(pk)
q
q
(t) = r(t) q
JC
JC
0.1
= 0.875°C/W MAX
JC
0.05
0.07
0.05
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
0.02
0.01
t
1
0.03
0.02
1
t
2
T
− T = P
C
q (t)
SINGLE PULSE
J(pk)
(pk) JC
DUTY CYCLE, D = t /t
1 2
0.01
0.02
0.03 0.05 0.1
0.2 0.3
0.5
1.0
2.0 3.0 5.0
10
20 30
50
100
200 300 500
1000 2000
t, TIME (ms)
Figure 4. Thermal Response
100
3000
2000
50
100 ms
T = 25°C
J
20
10
1000
500
5.0 ms
5302
C
5.0
2.0
dc
ib
1.0 ms
T = 200°C
J
Secondary Breakdown Limited
Bonding Wire Limited
C
ob
1.0
0.5
T = 25°C
C
300
200
Thermal Limitations
Pulse Duty Cycle ≤ 10%
2N5302
0.2
0.1
100
1.0
2.0 3.0
5.0
10
20 30
50
100
0.5
1.0
2.0 3.0
5.0 7.0 10
20 30
50
V
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
V , REVERSE VOLTAGE (VOLTS)
R
CE
Figure 5. Active−Region Safe Operating Area
Figure 6. Capacitance versus Voltage
3.0
5.0
T = 25°C
J
3.0
2.0
T = 25°C
C B
I
= I
B1 B2
I /I = 10
J
I /I = 10
C B
t ′
s
t ′ ≈ t − 1/8 t
s
s
f
1.0
0.7
0.5
1.0
0.7
0.5
t @ V = 30 V
r CC
t @ V = 30 V
f CC
0.3
0.2
0.3
t @ V = 10 V
f CC
t @ V = 10 V
r CC
0.1
t @ V = 2.0 V
d OB
0.07
0.05
0.1
0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0
10
20 30
0.03 0.05 0.1
0.3 0.5
1.0 3.0
5.0
10
30
I , COLLECTOR CURRENT (AMP)
C
I , COLLECTOR CURRENT (AMP)
C
Figure 7. Turn−On Time
Figure 8. Turn−Off Time
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3
−
−
−
0.4
0.3
0.2 −ꢁ0.1
0
0.1 0.2
0.3 0.4
0.5 0.6
2N5302
300
200
2.0
V
V
= 10 V
= 2.0 V
CE
CE
T = 175°C
J
T = 25°C
J
1.6
1.2
0.8
0.4
0
I
C
= 2.0 A 5.0 A
10 A
20 A
25°C
100
70
50
−ꢁ55°C
30
20
10
0.03 0.05 0.1 0.3 0.5
1.0 3.0
5.0
10
30
0.01 0.02
0.05 0.1 0.2
0.5
1.0 2.0
5.0
10
I , COLLECTOR CURRENT (AMP)
C
I , BASE CURRENT (AMP)
B
Figure 9. DC Current Gain
Figure 10. Collector Saturation Region
8
7
10
10
2.0
1.8
V
= 30 V
CE
T = 25°C
J
1.6
1.4
1.2
1.0
0.8
I
= 10 x I
CES
C
6
5
4
3
2
10
10
10
10
10
I
C
= 2 x I
CES
I
≈ I
CES
C
V
V
@ I /I = 10
C B
BE(sat)
0.6
0.4
0.2
0
V
@ V = 2.0 V
CE
BE(on)
CE(sat)
TYPICAL I
VALUES OBTAINED
CES
FROM FIGURE 13
@ I /I = 10
C B
0
20
40
60
80 100 120 140 160 180 200
0.03 0.05 0.1 0.3
0.5
1.0 3.0 5.0
10
30
T , JUNCTION TEMPERATURE (°C)
J
I , COLLECTOR CURRENT (AMP)
C
Figure 11. Effects of Base−Emitter Resistance
Figure 12. “On” Voltages
3
2
1
0
10
10
10
10
+ꢁ2.5
+ꢁ2.0
+ꢁ1.5
+ꢁ1.0
+ꢁ0.5
0
V
= 30 V
T = −ꢁ55°C to +175°C
CE
J
T = 175°C
J
h
FEꢀ
@ꢀV
+ꢀ 2.0ꢀV
CEꢀ
2
*APPLIES FOR I /I
<
C B
100°C
25°C
*qV for V
C
CE(sat)
I
C
= I
CES
−ꢁ0.5
−ꢁ1.0
−1
ꢁ 2
10
10
qV for V
B
−ꢁ1.5
−ꢁ2.0
−ꢁ2.5
BE(sat)
REVERSE
FORWARD
ꢁ 3
10
0.03 0.05 0.1 0.3
0.5
1.0 3.0 5.0
10
30
V
, BASE−EMITTER VOLTAGE (VOLTS)
I , COLLECTOR CURRENT (AMP)
C
BE
Figure 13. Collector Cut−Off Region
Figure 14. Temperature Coefficients
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4
2N5302
PACKAGE DIMENSIONS
TO−204 (TO−3)
CASE 1−07
ISSUE Z
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
A
N
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO−204AA OUTLINE SHALL APPLY.
C
SEATING
PLANE
−T−
E
INCHES
DIM MIN MAX
MILLIMETERS
MIN MAX
39.37 REF
−−− 26.67
K
D 2 PL
A
B
C
D
E
G
H
K
L
1.550 REF
−−− 1.050
M
M
M
Y
0.13 (0.005)
T
Q
0.250
0.038
0.055
0.335
0.043
0.070
6.35
0.97
1.40
8.51
1.09
1.77
U
−Y−
L
V
H
0.430 BSC
0.215 BSC
0.440 0.480
0.665 BSC
−−− 0.830
10.92 BSC
5.46 BSC
11.18 12.19
16.89 BSC
−−− 21.08
2
1
B
G
N
Q
U
V
0.151
1.187 BSC
0.131 0.188
0.165
3.84
30.15 BSC
3.33
4.19
4.77
−Q−
0.13 (0.005)
M
M
Y
T
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
ON Semiconductor and
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2N5302/D
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