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200GB120DN2 [ETC]

IGBT Module ; IGBT模块\n
200GB120DN2
型号： 200GB120DN2
厂家： ETC    ETC
描述：

IGBT Module
IGBT模块\n

双极性晶体管
文件： 总10页 (文件大小：160K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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BSM 200 GB 120 DN2  
IGBT Power Module  
• Half-bridge  
• Including fast free-wheeling diodes  
• Package with insulated metal base plate  
Type  
V
I
Package  
Ordering Code  
CE  
C
BSM 200 GB 120 DN2  
1200V 290A HALF-BRIDGE 2  
C67070-A2300-A70  
Maximum Ratings  
Parameter  
Symbol  
Values  
Unit  
Collector-emitter voltage  
Collector-gate voltage  
V
1200  
V
CE  
V
CGR  
R
= 20 kW  
1200  
± 20  
GE  
Gate-emitter voltage  
DC collector current  
V
GE  
I
A
C
T = 25 °C  
290  
200  
C
T = 80 °C  
C
Pulsed collector current, t = 1 ms  
I
p
Cpuls  
T = 25 °C  
580  
400  
C
T = 80 °C  
C
Power dissipation per IGBT  
P
W
tot  
T = 25 °C  
1400  
C
Chip temperature  
T
T
+ 150  
°C  
j
Storage temperature  
-40 ... + 125  
stg  
£
£
Thermal resistance, chip case  
Diode thermal resistance, chip case  
Insulation test voltage, t = 1min.  
Creepage distance  
R
R
0.09  
0.18  
K/W  
thJC  
thJC  
is  
D
V
-
2500  
Vac  
mm  
20  
Clearance  
-
11  
DIN humidity category, DIN 40 040  
IEC climatic category, DIN IEC 68-1  
-
F
sec  
-
40 / 125 / 56  
1
Oct-21-1997  
BSM 200 GB 120 DN2  
Electrical Characteristics, at T = 25 °C, unless otherwise specified  
j
Parameter  
Symbol  
Values  
typ.  
Unit  
min.  
max.  
Static Characteristics  
Gate threshold voltage  
V
V
V
GE(th)  
V
= V  
I = 8 mA  
4.5  
5.5  
6.5  
GE  
CE, C  
Collector-emitter saturation voltage  
CE(sat)  
V
V
= 15 V, I = 200 A, T = 25 °C  
-
-
2.5  
3.1  
3
GE  
GE  
C
j
= 15 V, I = 200 A, T = 125 °C  
3.7  
C
j
Zero gate voltage collector current  
I
mA  
nA  
CES  
V
V
= 1200 V, V = 0 V, T = 25 °C  
-
-
3
4
-
CE  
CE  
GE  
j
= 1200 V, V = 0 V, T = 125 °C  
12  
GE  
j
Gate-emitter leakage current  
= 20 V, V = 0 V  
I
GES  
V
-
-
400  
GE  
CE  
AC Characteristics  
Transconductance  
g
S
fs  
V
= 20 V, I = 200 A  
108  
-
-
-
-
-
CE  
C
Input capacitance  
= 25 V, V = 0 V, f = 1 MHz  
C
nF  
iss  
V
-
-
-
13  
2
CE  
GE  
Output capacitance  
= 25 V, V = 0 V, f = 1 MHz  
C
C
oss  
rss  
V
CE  
GE  
Reverse transfer capacitance  
= 25 V, V = 0 V, f = 1 MHz  
V
1
CE  
GE  
2
Oct-21-1997  
BSM 200 GB 120 DN2  
Electrical Characteristics, at T = 25 °C, unless otherwise specified  
j
Parameter  
Symbol  
Values  
typ.  
Unit  
min.  
max.  
Switching Characteristics, Inductive Load at T = 125 °C  
j
Turn-on delay time  
= 600 V, V = 15 V, I = 200 A  
t
ns  
d(on)  
V
CC  
GE  
C
W
R
= 4.7  
-
-
-
-
110  
80  
220  
160  
800  
120  
Gon  
Rise time  
= 600 V, V = 15 V, I = 200 A  
t
r
V
CC  
GE  
C
W
= 4.7  
R
Gon  
Turn-off delay time  
= 600 V, V = -15 V, I = 200 A  
t
d(off)  
V
CC  
GE  
C
W
R
= 4.7  
550  
80  
Goff  
Fall time  
= 600 V, V = -15 V, I = 200 A  
t
f
V
CC  
GE  
C
R
= 4.7 W  
Goff  
Free-Wheel Diode  
Diode forward voltage  
V
V
F
I = 200 A, V = 0 V, T = 25 °C  
-
-
2
2.5  
-
F
GE  
j
I = 200 A, V = 0 V, T = 125 °C  
1.8  
F
GE  
j
Reverse recovery time  
I = 200 A, V = -600 V, V = 0 V  
t
µs  
µC  
rr  
F
R
GE  
di /dt = -2000 A/µs, T = 125 °C  
-
0.5  
-
F
j
Reverse recovery charge  
I = 200 A, V = -600 V, V = 0 V  
Q
rr  
F
R
GE  
di /dt = -2000 A/µs  
F
T = 25 °C  
-
-
12  
36  
-
-
j
T = 125 °C  
j
3
Oct-21-1997  
BSM 200 GB 120 DN2  
Power dissipation  
Safe operating area  
I = ¦ (V  
P
= ¦ (T )  
)
CE  
tot  
C
C
parameter: T £ 150 °C  
parameter: D = 0, T = 25°C , T £ 150 °C  
C j  
j
10 3  
1500  
W
t
= 49.0µs  
100 µs  
p
1300  
A
1200  
1100  
1000  
900  
800  
700  
600  
500  
400  
300  
200  
Ptot  
IC  
10 2  
10 1  
10 0  
1 ms  
10 ms  
100  
0
DC  
10 3  
0
20  
40  
60  
80 100 120 °C  
160  
10 0  
10 1  
10 2  
V
TC  
VCE  
Collector current  
I = (T )  
Transient thermal impedance IGBT  
= (t )  
Z
¦
¦
p
C
C
th JC  
parameter: V  
15 V , T 150 °C  
parameter: D = t / T  
³
£
GE  
j
p
10 0  
300  
A
K/W  
260  
10 -1  
240  
220  
200  
180  
160  
140  
120  
100  
80  
IC  
ZthJC  
10 -2  
D = 0.50  
0.20  
10 -3  
0.10  
0.05  
0.02  
10 -4  
60  
single pulse  
0.01  
40  
20  
0
10 -5  
0
20  
40  
60  
80 100 120 °C  
TC  
160  
10 -5  
10 -4  
10 -3  
10 -2  
10 -1 s 10 0  
tp  
4
Oct-21-1997  
BSM 200 GB 120 DN2  
Typ. output characteristics  
Typ. output characteristics  
I = f (V  
I = f (V  
)
)
CE  
C
CE  
C
parameter: t = 80 µs, T = 25 °C  
parameter: t = 80 µs, T = 125 °C  
p j  
p
j
400  
A
400  
A
17V  
15V  
13V  
11V  
9V  
17V  
15V  
13V  
11V  
9V  
IC  
IC  
300  
250  
200  
150  
100  
300  
250  
200  
150  
100  
7V  
7V  
50  
0
50  
0
0
1
2
3
V
5
0
1
2
3
V
5
VCE  
VCE  
Typ. transfer characteristics  
I = f (V  
)
GE  
C
parameter: t = 80 µs, V = 20 V  
p
CE  
400  
A
IC  
300  
250  
200  
150  
100  
50  
0
0
2
4
6
8
10  
V
14  
VGE  
5
Oct-21-1997  
BSM 200 GB 120 DN2  
Typ. capacitances  
Typ. gate charge  
C = f (V )  
V
= ¦ (Q  
)
CE  
GE  
Gate  
parameter: I  
= 200 A  
parameter: V = 0 V, f = 1 MHz  
C puls  
GE  
10 2  
20  
V
nF  
16  
VGE  
C
600 V  
800 V  
Ciss  
14  
12  
10  
8
10 1  
Coss  
Crss  
10 0  
6
4
2
0
0
10 -1  
200  
400  
600  
800 1000  
nC  
1400  
0
5
10  
15  
20  
25  
30  
V
40  
VCE  
QGate  
Reverse biased safe operating area  
= f(V T = 150°C  
Short circuit safe operating area  
I = f(V ) , T = 150°C  
Csc  
I
)
,
Cpuls  
CE  
j
CE  
j
parameter: VGE = 15 V  
parameter: VGE = ± 15 V, tSC £ 10 µs, L < 25 nH  
2.5  
12  
ICpuls/IC  
ICsc/IC  
8
6
4
1.5  
1.0  
0.5  
0.0  
2
0
0
200 400 600 800 1000 1200  
V
1600  
0
200 400 600 800 1000 1200  
V
1600  
VCE  
VCE  
6
Oct-21-1997  
BSM 200 GB 120 DN2  
Typ. switching time  
Typ. switching time  
I = f (I ) , inductive load , T = 125°C  
t = f (R ) , inductive load , T = 125°C  
C
j
G
j
par.: V = 600 V, V = ± 15 V, R = 4.7  
par.: V = 600 V, V = ± 15 V, I = 200 A  
W
CE  
10 4  
GE  
G
CE  
10 4  
GE  
C
ns  
ns  
tdoff  
t
t
10 3  
10 3  
tdoff  
tdon  
tr  
tdon  
tr  
10 2  
10 2  
tf  
tf  
10 1  
10 1  
0
100  
200  
300  
A
500  
0
10  
20  
30  
40  
60  
W
IC  
RG  
Typ. switching losses  
E = f (I ) , inductive load , T = 125°C  
Typ. switching losses  
E = f (R ) , inductive load , T = 125°C  
C
j
G
j
par.: V = 600 V, V = ± 15 V, R = 4.7 W  
par.: V = 600V, V = ± 15 V, I = 200 A  
CE  
GE  
G
CE  
GE  
C
100  
100  
Eon  
Eon  
mWs  
80  
mWs  
80  
E
E
70  
70  
60  
60  
50  
50  
Eoff  
Eoff  
40  
40  
30  
30  
20  
20  
10  
0
10  
0
0
100  
200  
300  
A
500  
0
10  
20  
30  
40  
60  
W
IC  
RG  
7
Oct-21-1997  
BSM 200 GB 120 DN2  
Forward characteristics of fast recovery  
Transient thermal impedance Diode  
= ¦ (t )  
reverse diode  
I = f(V )  
Z
F
F
th JC  
p
parameter: D = t / T  
parameter: T  
p
j
10 0  
400  
A
K/W  
ZthJC  
IF  
10 -1  
300  
250  
200  
150  
100  
Tj=125°C  
Tj=25°C  
10 -2  
D = 0.50  
0.20  
0.10  
0.05  
10 -3  
0.02  
single pulse  
0.01  
50  
0
10 -4  
0.0  
0.5  
1.0  
1.5  
2.0  
V
3.0  
10 -5  
10 -4  
10 -3  
10 -2  
10 -1 s 10 0  
VF  
tp  
8
Oct-21-1997  
BSM 200 GB 120 DN2  
Circuit Diagram  
Package Outlines  
Dimensions in mm  
Weight: 420 g  
9
Oct-21-1997  
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
BSM200GB120DN2  
Anhang C-Serie  
Appendix C-series  
Gehäuse spezifische Werte  
Housing specific values  
typ.  
Modulinduktivität  
stray inductance module  
LsCE  
20  
nH  
Gehäusemaße C-Serie  
Package outline C-series  
Appendix_C-Serie_BSM200GB120DN2.xls  
2001-09-20  
Appendix C-series  

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