200GL120DN2 [ETC]
IGBT Module ; IGBT模块\n
| 型号： | 200GL120DN2 |
| 厂家： | 
ETC |
| 描述： | IGBT Module
|
| 文件： | 总5页 (文件大小：80K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BSM 200 GAL 120 DN2
IGBT Power Module
• Single switch with chopper diode at collector
• Chopper diode like diode of BSM300GA120DN2
• Package with insulated metal base plate
Type
V
I
Package
Ordering Code
CE
C
BSM 200 GAL 120 DN2 1200V 290A HB 200GAL
C67070-A2301-A70
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
Collector-gate voltage
V
V
1200
V
CE
CGR
Ω
R
= 20 k
1200
± 20
GE
Gate-emitter voltage
DC collector current
V
GE
I
A
C
T = 25 °C
290
200
C
T = 80 °C
C
Pulsed collector current, t = 1 ms
I
p
Cpuls
T = 25 °C
580
400
C
T = 80 °C
C
Power dissipation per IGBT
P
W
tot
T = 25 °C
1400
C
Chip temperature
T
T
+ 150
°C
j
Storage temperature
-40 ... + 125
stg
Thermal resistance, chip case
Diode thermal resistance, chip case
Diode thermal resistance, chip-case,chopper
Insulation test voltage, t = 1min.
Creepage distance
R
R
R
≤ 0.09
K/W
thJC
thJC
-
D
THJC
≤
0.125
DC
V
-
2500
Vac
mm
is
20
Clearance
-
11
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
-
F
sec
-
40 / 125 / 56
1
Nov-24-1997
BSM 200 GAL 120 DN2
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Values
typ.
Unit
min.
max.
Static Characteristics
Gate threshold voltage
V
V
V
GE(th)
V
= V
I = 8 mA
4.5
5.5
6.5
GE
CE, C
Collector-emitter saturation voltage
CE(sat)
V
V
= 15 V, I = 200 A, T = 25 °C
-
-
2.5
3.1
3
GE
GE
C
j
= 15 V, I = 200 A, T = 125 °C
3.7
C
j
Zero gate voltage collector current
I
mA
nA
CES
V
V
= 1200 V, V = 0 V, T = 25 °C
-
-
3
4
-
CE
CE
GE
j
= 1200 V, V = 0 V, T = 125 °C
12
GE
j
Gate-emitter leakage current
= 20 V, V = 0 V
I
GES
V
-
-
400
GE
CE
AC Characteristics
Transconductance
g
S
fs
V
= 20 V, I = 200 A
108
-
-
-
-
-
CE
C
Input capacitance
= 25 V, V = 0 V, f = 1 MHz
C
nF
iss
V
-
-
-
13
2
CE
GE
Output capacitance
= 25 V, V = 0 V, f = 1 MHz
C
C
oss
rss
V
CE
GE
Reverse transfer capacitance
= 25 V, V = 0 V, f = 1 MHz
V
1
CE
GE
2
Nov-24-1997
BSM 200 GAL 120 DN2
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Values
typ.
Unit
min.
max.
Switching Characteristics, Inductive Load at T = 125 °C
j
Turn-on delay time
= 600 V, V = 15 V, I = 200 A
t
ns
d(on)
V
CC
GE
C
Ω
R
= 4.7
-
-
-
-
110
80
220
160
800
120
Gon
Rise time
= 600 V, V = 15 V, I = 200 A
t
r
V
CC
GE
C
Ω
= 4.7
R
Gon
Turn-off delay time
= 600 V, V = -15 V, I = 200 A
t
d(off)
V
CC
GE
C
Ω
R
= 4.7
550
80
Goff
Fall time
= 600 V, V = -15 V, I = 200 A
t
f
V
CC
GE
C
R
= 4.7 Ω
Goff
Free-Wheel Diode
Diode forward voltage
V
V
F
I = 200 A, V = 0 V, T = 25 °C
-
-
-
-
-
-
F
GE
j
I = 200 A, V = 0 V, T = 125 °C
F
GE
j
Reverse recovery time
I = 200 A, V = -600 V, V = 0 V
t
µs
µC
rr
F
R
GE
di /dt = -2000 A/µs, T = 125 °C
-
-
-
F
j
Reverse recovery charge
I = 200 A, V = -600 V, V = 0 V
Q
rr
F
R
GE
di /dt = -2000 A/µs
F
T = 25 °C
-
-
-
-
-
-
j
T = 125 °C
j
3
Nov-24-1997
BSM 200 GAL 120 DN2
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Values
typ.
Unit
min.
max.
Chopper Diode
Chopper diode forward voltage
V
V
FC
I
= 300 A, V = 0 V, T = 25 °C
-
-
2
2.5
-
FC
GE
j
I
= 300 A, V = 0 V, T = 125 °C
1.8
FC
GE
j
Reverse recovery time, chopper
= 300 A, V = -600 V, V = 0 V
t
ns
µC
rrC
I
FC
R
GE
di /dt = -2500 A/µs, T = 25 °C
-
500
-
F
j
Reverse recovery charge, chopper
= 300 A, V = -600 V, V = 0 V
Q
rrC
I
FC
R
GE
di /dt = -2500 A/µs
F
T = 25 °C
-
-
14
40
-
-
j
T = 125 °C
j
4
Nov-24-1997
IGBT-Module
IGBT-Modules
%60ꢀꢁꢁ*$/ꢂꢀꢁ'1ꢀꢃꢄꢃ%60ꢀꢁꢁ*$5ꢂꢀꢁ'1ꢀ
Gehäusemaße / Schaltbild
Package outline / Circuit diagram
PIN 6 and 7
GAL type
only
PIN 4 and 5
GAR type
only
GAL type
GAR type
Update of Drawing Sep-21-98
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