ET-7N60 [ESTEK]
N-Channel MOSFET; N沟道MOSFET
| 型号： | ET-7N60 |
| 厂家： | 
Estek Electronics Co. Ltd |
| 描述： | N-Channel MOSFET |
| 文件： | 总2页 (文件大小：1229K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ET- 7N60
N-Channel MOSFET
Features
■ R
(Max 1.2 Ω )@V =10V
DS(on)
GS
{
2. Drain
Symbol
■ Gate Charge (Typical 28nC)
■ Improved dv/dt Capability, High Ruggedness
■ 100% Avalanche Tested
●
◀
▲
●
●
1. Gate
{
■ Maximum Junction Temperature Range (150°C)
3. Source
{
General Description
This Power MOSFET is manufactured advanced
TO-220F
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. These devices are well suited
for high efficiency switch mode power supplies, active power factor
correction, electronic lamp ballasts based on half bridge topology.
2
1
3
Absolute Maximum Ratings
(*
Drain current limited by junction temperature)
Symbol
Parameter
Value
600
Units
VDSS
Drain to Source Voltage
V
A
Continuous Drain Current(@TC = 25°C)
Continuous Drain Current(@TC = 100°C)
Drain Current Pulsed
7.0*
ID
4.4*
28*
A
A
V
IDM
(Note 1)
VGS
Gate to Source Voltage
±30
420
EAS
EAR
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 1)
(Note 3)
mJ
mJ
14.7
dv/dt
4.5
V/ns
W
Total Power Dissipation(@TC = 25 °C)
48
PD
Derating Factor above 25 °C
0.38
W/°C
°C
TSTG, TJ
TL
Operating Junction Temperature & Storage Temperature
- 55 ~ 150
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
300
°C
Thermal Characteristics
Value
Symbol
Parameter
Units
Min.
Typ.
Max.
2.6
RθJC
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
-
-
-
-
°C/W
°C/W
62.5
BEIJING ESTEK ELECTRONICS CO.,LTD
1
ET- 7N60
Electrical Characteristics ( TC = 25 °C unless otherwise noted )
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
VGS = 0V, ID = 250uA
Drain-Source Breakdown Voltage
600
-
-
-
-
V
Δ BVDSS
Δ TJ
/
Breakdown Voltage Temperature
coefficient
ID = 250uA, referenced to 25 °C
0.6
V/°C
VDS = 600V, VGS = 0V
-
-
-
-
-
-
-
-
10
uA
uA
nA
nA
IDSS
Drain-Source Leakage Current
V
DS = 480V, TC = 125 °C
100
100
-100
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
Gate-Source Leakage, Forward
Gate-source Leakage, Reverse
IGSS
On Characteristics
VGS(th)
VDS = VGS, ID = 250uA
VGS =10 V, ID = 3.5A
Gate Threshold Voltage
2.0
-
-
4.0
1.2
V
Static Drain-Source On-state Resis-
tance
RDS(ON)
0.85
Ω
Dynamic Characteristics
Ciss
Input Capacitance
-
-
-
1100
110
12
1500
150
16
pF
Coss
Crss
Output Capacitance
V
V
GS =0 V, VDS =25V, f = 1MHz
Reverse Transfer Capacitance
Dynamic Characteristics
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
-
-
-
-
-
-
15
30
110
40
28
5
40
70
230
90
37
-
DD =300V, ID =7.0A, RG =25Ω
ns
Turn-off Delay Time
Fall Time
(Note 4, 5)
Qg
Total Gate Charge
Gate-Source Charge
V
DS =480V, VGS =10V, ID =7.0A
(Note 4, 5)
Qgs
nC
Qgd
Gate-Drain Charge(Miller Charge)
-
11
-
Source-Drain Diode Ratings and Characteristics
Symbol
IS
Parameter
Test Conditions
Min.
Typ.
Max.
7.0
Unit.
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Integral Reverse p-n Junction
Diode in the MOSFET
-
-
-
-
-
-
A
ISM
28
VSD
IS =7.0A, VGS =0V
1.4
V
trr
Reverse Recovery Time
-
-
365
3.4
-
-
ns
uC
IS=7.0A, VGS=0V, dIF/dt=100A/us
Qrr
Reverse Recovery Charge
※ NOTES
1. Repeativity rating : pulse width limited by junction temperature
2. L = 15.7mH, IAS =7A, VDD = 50V, RG = 25Ω , Starting TJ = 25°C
3. ISD ≤ 7A, di/dt ≤ 200A/us, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2%
5. Essentially independent of operating temperature.
BEIJING ESTEK ELECTRONICS CO.,LTD
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