ET-830 [ESTEK]
N-Channel MOSFET; N沟道MOSFET
| 型号： | ET-830 |
| 厂家： | 
Estek Electronics Co. Ltd |
| 描述： | N-Channel MOSFET |
| 文件： | 总2页 (文件大小：1610K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ET- 830
N-Channel MOSFET
Features
■ RDS(on) (Max 1.4 Ω )@VGS=10V
{
2. Drain
Symbol
●
■ Gate Charge (Typical 25nC)
◀
▲
■ Improved dv/dt Capability, High Ruggedness
■ 100% Avalanche Tested
●
1. Gate
{
●
■ Maximum Junction Temperature Range (150°C)
3. Source
{
General Description
TO-220
This Power MOSFET is produced using Integral’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. These devices are well suited
for high efficiency switching DC/DC converters, switch mode power
supply, DC-AC converters for uninterruped power supply, motor
control.
1
2
3
Absolute Maximum Ratings
Symbol
Parameter
Value
500
Units
VDSS
Drain to Source Voltage
V
A
Continuous Drain Current(@TC = 25°C)
Continuous Drain Current(@TC = 100°C)
Drain Current Pulsed
5.0
ID
3.0
20
A
A
V
IDM
(Note 1)
VGS
Gate to Source Voltage
±30
292
EAS
EAR
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 1)
(Note 3)
mJ
mJ
8.75
dv/dt
5.5
V/ns
W
Total Power Dissipation(@TC = 25 °C)
87.5
PD
Derating Factor above 25 °C
0.70
W/°C
°C
TSTG, TJ
Operating Junction Temperature & Storage Temperature
- 55 ~ 150
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
TL
300
°C
Thermal Characteristics
Value
Symbol
Parameter
Units
Min.
Typ.
Max.
RθJC
RθCS
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case to Sink
-
-
-
-
0.5
-
1.43
-
°C/W
°C/W
°C/W
Thermal Resistance, Junction-to-Ambient
62.5
Ver.00/21.08.2009
IFP830-TSe.doc
BEIJING ESTEK ELECTRONICS CO.,LTD
Page 1 of 2
ET- 830
Electrical Characteristics
T = 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
VGS = 0 V, ID = 250 µA
Drain-Source Breakdown Voltage
500
--
--
--
--
V
∆BVDSS
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
0.50
V/°C
/
∆TJ
IDSS
VDS = 500 V, VGS = 0 V
VDS = 400 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
--
--
--
--
--
--
--
--
10
µA
µA
nA
nA
Zero Gate Voltage Drain Current
100
100
-100
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
On Characteristics
VGS(th)
VDS = VGS, ID = 250 µA
VGS =10V,ID =2.5A
(Note 4)
Gate Threshold Voltage
2.0
--
--
4.0
V
RDS(on)
Static Drain-Source
On-Resistance
1.15
1.40
Ω
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
--
--
--
680
85
900
110
20
pF
pF
pF
V
DS = 25 V, VGS = 0 V,
Output Capacitance
f = 1.0 MHz
Reverse Transfer Capacitance
15
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
--
--
--
--
--
--
--
20
40
90
45
25
5
50
90
190
100
33
--
ns
ns
VDD = 250V, ID = 5.0 A,
RG = 25 Ω
ns
ns
(Note 4, 5)
(Note 4, 5)
Qg
nC
nC
nC
VDS = 400 V, ID = 5.0A,
VGS = 10 V
Qgs
Qgd
10
--
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
--
--
--
--
--
5.0
20
1.5
--
A
A
ISM
VSD
trr
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = 5.0 A
GS = 0 V, IS = 5.0 A,
dIF / dt = 100 A/µs
Drain-Source Diode Forward Voltage
Reverse Recovery Time
--
V
V
250
2.2
ns
µC
Qrr
Reverse Recovery Charge
--
(Note 4)
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 21.0mH, I = 5.0A, V = 50V, R = 25 Ω, Starting
T = 25°C
Starting T = 25°C
AS
DD
G
J
3. I ≤ 5.0A, di/dt ≤ 300µA/s, V
≤ BV
SD
DD
DSS, J
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Ver.00/21.08.2009
IFP830-TSe.doc
BEIJING ESTEK ELECTRONICS CO.,LTD
Page 2 of 2
相关型号：
©2020 ICPDF网 联系我们和版权申明