4N60 [ESTEK]
4 Amps，600Volts N-Channel MOSFET; 4安培， 600Volts N沟道MOSFET
| 型号： | 4N60 |
| 厂家： | 
Estek Electronics Co. Ltd |
| 描述： | 4 Amps，600Volts N-Channel MOSFET |
| 文件： | 总5页 (文件大小：378K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
4N60
4 Amps，600Volts
N-Channel MOSFET
■ Description
The ET4N60 NꢀChannel enhancement mode silicon gate power MOSFET is
designed for high voltage, high speed power switching
applications such as switching regulators, switching converters,
solenoid, motor drivers, relay drivers
.
■ Features
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
RDS(ON) =2.50ꢁ@VGS = 10 V
Low gate charge ( typical 16nC)
High ruggedness
Fast switching capability
Avalanche energy specified
Improved dv/dt capability
■ Symbol
■ Absolute Maximum Ratings(Tc=25℃,unless otherwise specified)
Ratings
Parameter
Symbol
Units
TOꢀ220
TOꢀ220F
600
TOꢀ252
DrainꢀSource Voltage
GateꢀSource Voltage
VDSS
VGSS
V
V
A
A
±30
4.0＊
2.4＊
Tc=25℃
4.0
2.4
2.8
1.8
Drain Currenet
ID
Continuous
Tc=100℃
Drain Current Pulsed
(Note 1)
(Note 1)
IDP
16
16＊
11.2
A
Repetitive
Single Pulse
EAR
EAS
10.4
180
4.9
mJ
mJ
Avalanche Energy
(Note 2)
(Note 3)
210
Peak Diode Recovery dv/dt
Total Power Dissipation
dv/dt
4.5
34
V/ns
W
Tc=25℃
Derate above 25℃
104
49
PD
0.83
0.27
0.39
W/℃
BEIJING ESTEK ELECTRONICS CO.,LTD
1
4N60
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
ꢀ55~+150
℃
＊Drain current limited by maximum junction temperature.
■
Thermal Characteristics
Ratings
Units
Parameter
Symbol
TOꢀ220
TOꢀ220F
62.5
TOꢀ252
50＊（110）
Thermal Resistance JunctionꢀAmbient
Thermal Resistance, CaseꢀtoꢀSink Typ.
Thermal Resistance JunctionꢀCase
RthJA
RthCS
RthJC
℃/W
0.5
1.2
ꢀꢀ
ꢀꢀ
3.65
2.56
■
Electrical Characteristics（TJ=25℃,unless Otherwise specified.）
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Off Characteristics
DrainꢀSource Breakdown Voltage
BVDSS
IDSS
VGS=0V,ID=250ꢂA
VDS=600V,VGS=0V
VDS=480V,TC=125℃
VGS=30V,VDS=0V
VGS=ꢀ30V,VDS=0V
ID=250ꢂA
600
ꢀꢀ
ꢀꢀ
ꢀꢀ
ꢀꢀ
1
V
ꢂA
Zero Gate Voltage Drain Current
ꢀꢀ
ꢀꢀ
10
100
ꢀ100
ꢀꢀ
ꢂA
Forward
Reverse
ꢀꢀ
ꢀꢀ
nA
GateꢀBody Leakage
Current
IGSS
ꢀꢀ
ꢀꢀ
nA
Breakdown Voltage Temperature
Coefficient
△BVDSS/△TJ
ꢀꢀ
0.7
V/℃
On Characteristics
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS=VGS, ID=250ꢂA
2.0
ꢀꢀ
ꢀꢀ
4.0
2.5
V
VDS=10V,
ID=2.0A(TO220,TO220F)
Static DrainꢀSource OnꢀResistance
2.0
ꢁ
ID=1.4A(TO252)
Dynamic Characteristics
Input Capacitance
CISS
COSS
CRSS
ꢀꢀ
ꢀꢀ
ꢀꢀ
560
55
7
ꢀꢀ
ꢀꢀ
ꢀꢀ
pF
pF
pF
VDS=25V,VGS=0V,
f=1MHZ
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
TurnꢀOn Delay Time
Rise Time
tD(ON)
tR
tD(OFF)
tF
ꢀꢀ
ꢀꢀ
ꢀꢀ
ꢀꢀ
ꢀꢀ
ꢀꢀ
ꢀꢀ
10
40
40
50
16
2.5
6.5
ꢀꢀ
ꢀꢀ
ꢀꢀ
ꢀꢀ
ꢀꢀ
ꢀꢀ
ꢀꢀ
ns
ns
V
DD=300V,
ID=4.0A(TO220,TO220F)
ID=2.8A(TO252)
RG=25ꢁ
TurnꢀOff Delay Time
Fall Time
ns
(Note 4, 5)
ns
VDS=480V,
Total Gate Charge
QG
nC
nC
nC
ID=4.0A(TO220,TO220F)
ID=2.8A(TO252)
VGS=10V
GateꢀSource Charge
GateꢀDrain Charge
QGS
QGD
(Note 4, 5)
Drain-Source Diode Characteristics
VGS=0V
ISD=4.0A(TO220,TO220F)
ISD=2.8A(TO252)
VSD
ꢀꢀ
ꢀꢀ
1.4
V
DrainꢀSource Diode Forward
Voltage
TOꢀ220,TOꢀ220F
TOꢀ252
ꢀꢀ
ꢀꢀ
ꢀꢀ
ꢀꢀ
ꢀꢀ
ꢀꢀ
ꢀꢀ
ꢀꢀ
4.0
2.8
16.0
11.2
ꢀꢀ
Continuous DrainꢀSource Current
Pulsed DrainꢀSource Current
ISD
A
A
TOꢀ220,TOꢀ220F
TOꢀ252
ꢀꢀ
ISM
ꢀꢀ
ISD=4.0A,
dISD/dt=100A/ꢂs
Reverse Recovery Time
tRR
300
2.0
ns
Reverse Recovery Charge
QRR
(Note 4)
ꢀꢀ
ꢂC
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 20 mH, IAS = 4.0 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 4.0 A, di/dt ≤ 200A/μs, VDD≤BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤300μs, Duty cycle≤ 2%
5. Essentially independent of operating temperature
BEIJING ESTEK ELECTRONICS CO.,LTD
2
4N60
■ Typical Characteristics
BEIJING ESTEK ELECTRONICS CO.,LTD
3
4N60
■ Typical Characteristics (Continued)
Figure 9-1. Maximum Safe Operating Area
for TO220
Figure 9-2. Maximum Safe Operating Area
for TO220F
TO220,TO220F
TO251,TO252
Figure 9-3. Maximum Safe Operating Area
for TO251, TO252
Figure 10. Maximum Drain Current
vs Case Temperature
BEIJING ESTEK ELECTRONICS CO.,LTD
4
4N60
■ Typical Characteristics (Continued)
Figure 11-1. Transient Thermal Response Curve TO220
Figure 11-2. Transient Thermal Response Curve for TO220F
Figure 11-3. Transient Thermal Response Curve for TO252
BEIJING ESTEK ELECTRONICS CO.,LTD
5
相关型号：
©2020 ICPDF网 联系我们和版权申明