4N60-TA3-T [UTC]
4 Amps, 600 Volts N-CHANNEL POWER MOSFET; 4安培， 600伏特N沟道功率MOSFET
| 型号： | 4N60-TA3-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | 4 Amps, 600 Volts N-CHANNEL POWER MOSFET |
| 文件： | 总8页 (文件大小：152K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
4N60
Power MOSFET
4 Amps, 600 Volts
N-CHANNEL POWER MOSFET
1
ꢀ
DESCRIPTION
TO-220
The UTC 4N60 is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at high speed
switching applications in power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.
1
TO-220F
ꢀ
FEATURES
*Pb-free plating product number: 4N60L
* RDS(ON) = 2.5Ω @VGS = 10 V
* Ultra low gate charge ( typical 15 nC )
* Low reverse transfer Capacitance ( CRSS = typical 8.0 pF )
* Fast switching capability
* Avalanche energy Specified
* Improved dv/dt capability, high ruggedness
ꢀ
SYMBOL
2.Drain
1.Gate
3.Source
ꢀ
ORDERING INFORMATION
Order Number
Pin Assignment
Packing
Package
Normal
Lead Free Plating
1
2
D
D
3
S
S
4N60-TA3-T
4N60-TF3-T
4N60L-TA3-T
4N60L-TF3-T
TO-220
G
G
Tube
Tube
TO-220F
4N60L-TA3-T
(1)Packing Type
(2)Package Type
(3)Lead Plating
(1) T: Tube, R: Tape Reel
(2) TA3: TO-220, TF3: TO-220F
(3) L: Lead Free Plating, Blank: Pb/Sn
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4N60
Power MOSFET
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ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
RATINGS
600
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
VGSS
±30
V
Avalanche Current - (Note 1)
IAR
4.4
A
TC = 25°C
4.0
A
Continuous Drain Current
ID
TC = 100°C
2.8
A
Pulsed Drain Current, TP Limited by TJMAX - (Note 1)
Avalanche Energy, Single Pulsed (Note 2)
Avalanche Energy, Repetitive, Limited by TJMAX
Peak Diode Recovery dv/dt (Note 3)
Power Dissipation (TC = 25°C)
IDM
EAS
EAR
dv/dt
PD
16
A
260
mJ
mJ
V/ns
W
10.6
4.5
106
Junction Temperature
TJ
+150
-55 ~ +150
℃
℃
Storage Temperature
TSTG
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ꢀ
THERMAL DATA
PARAMETER
SYMBOL
θJA
MIN
TYP
MAX
62.5
3
UNIT
°C/W
°C/W
°C/W
Junction-to-Ambient
Junction-to-Case
Case-to-Sink
θJC
θCS
0.5
ꢀ
ELECTRICAL CHARACTERISTICS (TC =25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
IDSS
VGS = 0 V, ID = 250 µA
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
600
V
10
µA
Drain-Source Leakage Current
Gate-Source Leakage Current
100 µA
100 nA
-100 nA
Forward
Reverse
IGSS
Breakdown Voltage Temperature
Coefficient
△BVDSS/△T
J ID = 250 µA, Referenced to 25°C
0.6
4.0
V/℃
On Characteristics
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics
Input Capacitance
VGS(TH)
RDS(ON)
gFS
VDS = VGS, ID = 250 µA
2.0
4.0
2.5
V
Ω
S
VGS = 10 V, ID = 2.2 A
VDS = 50 V, ID = 2.2 A (Note 4)
CISS
COSS
CRSS
520 670 pF
VDS = 25 V, VGS = 0 V, f = 1MHz
Output Capacitance
70
8
90
11
pF
pF
Reverse Transfer Capacitance
Switching Characteristics
Turn-On Delay Time
tD(ON)
tR
tD(OFF)
tF
13
35
ns
Turn-On Rise Time
VDD = 300V, ID = 4.0 A, RG = 25Ω
(Note 4, 5)
45 100 ns
Turn-Off Delay Time
25
35
60
80
20
ns
ns
Turn-Off Fall Time
Total Gate Charge
QG
15
nC
nC
nC
VDS= 480V,ID= 4.0A, VGS= 10 V
Gate-Source Charge
Gate-Drain Charge
QGS
QDD
3.4
7.1
(Note 4, 5)
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4N60
Power MOSFET
ꢀ
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Source- Drain Diode Ratings and Characteristics
Drain-Source Diode Forward Voltage
Maximum Continuous Drain-Source
Diode Forward Current
VSD
IS
VGS = 0 V, IS = 4.4 A
1.4
4.4
V
A
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
17.6
A
Reverse Recovery Time
tRR
V
GS = 0 V, IS = 4.4 A,
250
1.5
ns
dIF/dt = 100 A/µs (Note 4)
Reverse Recovery Charge
QRR
µC
Notes: 1. Repetitive Rating : Pulse width limited by TJ
2. L = 25mH, IAS = 4.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 4.4A, di/dt ≤200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
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4N60
Power MOSFET
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TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
P. W.
VGS
(Driver)
Period
D=
P.W.
Period
10V
VGS=
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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4N60
Power MOSFET
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TEST CIRCUITS AND WAVEFORMS (Cont.)
RL
VDS
VDS
90%
VDD
VGS
RG
10%
VGS
D.U.T.
10V
tD(ON )
tD(OFF)
Pulse Width ≤ 1μs
Duty Factor ≤0.1%
tF
tR
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Same Type
as D.U.T.
50kΩ
QG
12V
10V
0.3μF
0.2μF
VDS
QGS
QGD
VGS
DUT
VG
3mA
Charge
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L
VDS
BVDSS
RD
VDD
10V
D.U.T.
tp
IAS
Time
tp
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
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4N60
Power MOSFET
ꢀ
TYPICAL CHARACTERISTICS
Breakdown Voltage Variation vs.
Temperature
On-Resistance Junction Temperature
1.2
3.0
2.5
2.0
1.1
1.0
1.5
1.0
Note:
1. VGS=10V
2. ID=4A
Note:
1. VGS=0V
2. ID=250µA
0.9
0.8
0.5
0.0
-50
-100
0
50 100 150 200
0
200
-100 -50
50 100 150
Junction Temperature, TJ (℃)
Junction Temperature, TJ (℃)
Maximum Drain Current vs. Case
Temperature
Maximum Safe Operating Area
5
4
Operation in This Area is Limited by
RDS(on)
100µs
10
1ms
3
2
10ms
DC
1
Notes:
1. TJ=25℃
2. TJ=150℃
3. Single Pulse
1
0
0.1
1
10
100
1000
25 50
75 100 125
Case Temperature, TC (℃)
Drain-Source Voltage, VDS (V)
On-State Characteristics
Transfer Characteristics
VGS
Top: 10V
10
10
1
9V
8V
7V
6V
25℃
5.5V
5 V
Bottorm :5.0V
1
5.0V
150℃
Notes:
1. 250µs Pulse Test
2. TC=25℃
0.1
Notes:
1. VDS =50V
2. 250µs Pulse Test
0.1
2
4
6
8
10
0.1
1
10
Gate-Source Voltage, VGS (V)
Drain-to-Source Voltage, VDS (V)
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4N60
Power MOSFET
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TYPICAL CHARACTERISTICS(Cont.)
On State Current vs. Allowable Case
On-Resistance Variation vs. Drain
Current and Gate Voltage
Temperature
6
10
5
4
150℃
VGS=20V
VGS=10V
25℃
3
2
1
Notes:
1. VGS=0V
2. 250µs Test
1
0
Note: TJ=25℃
0.1
0.2 0.4 0.6
0
2
4
6
8
10 12
0.8 1.0 1.2 1.4 1.6 1.8
Drain Current, ID (A)
Source-Drain Voltage, VSD (V)
Capacitance Characteristics
(Non-Repetitive)
Gate Charge Characteristics
12
10
8
1200
Ciss=Cgs+Cgd (Cds=shorted )
Coss=Cds+Cgd Crss=Cgd
VDS=300V
VDS=480V
1000
800
C
iss
Notes:
1. VGS=0V
VDS=120V
Coss
6
600
400
200
2. f = 1MHz
4
2
Crss
Note: ID=4A
0
0
20
0
5
10
15
25
0.1
1
10
Total Gate Charge, QG (nC)
Drain-SourceVoltage, VDS (V)
Transient Thermal Response
Curve
Power Dissipation
120
100
80
1
0.1
60
40
Notes:
1. θJC (t) = 1.18℃/W Max.
2. Duty Factor , D=t1/t2
3.TJM-TC=PDM×θJC (t)
20
0
0.01
1E-5
1E-4 1E-3 0.01 0.1
1
10
0 20 40 60 80 100 120140 160
(°C)
Square Wave Pulse Duration, t1 (sec)
T
C
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4N60
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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