BR3501W [EIC]
SILICON BRIDGE RECTIFIERS; 硅桥式整流器
| 型号： | BR3501W |
| 厂家： | 
EIC DISCRETE SEMICONDUCTORS |
| 描述： | SILICON BRIDGE RECTIFIERS |
| 文件： | 总2页 (文件大小：22K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SILICON BRIDGE RECTIFIERS
BR50W
BR3500W - BR3510W
PRV : 50 - 1000 Volts
Io : 35 Amperes
0.732 (18.6)
0.692 (17.5)
FEATURES :
* High current capability
* High surge current capability
* High reliability
1.130 (28.7)
0.470 (11.9)
1.120 (28.4)
0.430 (10.9)
* Low reverse current
* Low forward voltage drop
* High case dielectric strength
0.21 (5.3)
0.20 (5.1)
MECHANICAL DATA :
* Case : Molded plastic with heatsink integrally
mounted in the bridge encapsulation
0.042 (1.06)
0.038 (0.96)
1.2 (30.5)
MIN.
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
0.310 (7.87)
0.280(7.11)
* Polarity : Polarity symbols marked on case
* Mounting position : Bolt down on heat-sink
with silicone thermal compound between
bridge and mounting surface for maximum
heat transfer efficiency
Dimensions in inches and ( millimeters )
* Weight : 15.95 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
°
Rating at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
BR
BR
BR
BR
BR
BR
BR
RATING
SYMBOL
UNITS
3500W 3501W 3502W 3504W 3506W 3508W 3510W
VRRM
VRMS
VDC
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
50
35
50
100
70
200
140
200
400
280
400
35
600
420
600
800
560
800
1000
700
Volts
Volts
Volts
Amp.
Maximum DC Blocking Voltage
100
1000
°
IF(AV)
Maximum Average Forward Current Tc = 55 C
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
Maximum Forward Voltage per Diode at IF = 17.5 Amps.
°
IFSM
I2t
400
Amp.
A2S
660
VF
1.1
10
Volts
R
I
m
A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Ta = 25 C
°
IR(H)
200
mA
Ta = 100 C
°
Typical Thermal Resistance at Junction to Case ( Note 1 )
Typical Thermal Resistance at Junction to Ambient
Operating Junction Temperature Range
q
1.5
R JC
C/W
10
°
C/W
RqJA
TJ
°
C
- 40 to + 150
- 40 to + 150
Storage Temperature Range
TSTG
°
C
Notes :
1. Thermal Resistance from junction to case with units mounted on a 7.5" x 3.5" x 4.6" (19cm.x 9cm.x 11.8cm.) Al.-Finned Plate
UPDATE : APRIL 21, 1998
RATING AND CHARACTERISTIC CURVES ( BR3500W THRU BR3510W )
FIG.1 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
600
42
35
500
400
°
C
28
21
TJ = 50
300
200
100
0
14
HEAT-SINK MOUNTING, Tc
7.5" x 3.5" x 4.6" THK.
7
0
(19cm x 9cm x 11.8cm)
Al.-Finned plate
8.3 ms SINGLE HALF SINE WAVE
JEDEC METHOD
0
25
50
75
100
125
150
175
1
2
4
6
10
20
40 60
100
°
NUMBER OF CYCLES AT 60Hz
CASE TEMPERATURE, ( C)
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE
PER DIODE
100
10
TJ = 100 °C
1.0
10
m
s
Pulse Width = 300
1 % Duty Cycle
0.1
J
°
1.0
T = 25
C
J
T = 25 °C
0.01
0.1
0
20
40
60
80
100
120
140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
FORWARD VOLTAGE, VOLTS
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