BR3502 [EIC]
SILICON BRIDGE RECTIFIERS; 硅桥式整流器
| 型号： | BR3502 |
| 厂家： | 
EIC DISCRETE SEMICONDUCTORS |
| 描述： | SILICON BRIDGE RECTIFIERS |
| 文件： | 总2页 (文件大小：24K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SILICON BRIDGE RECTIFIERS
BR3500 - BR3510
BR50
PRV : 50 - 1000 Volts
Io : 35 Amperes
0.728(18.50)
0.688(17.40)
FEATURES :
* High current capability
* High surge current capability
* High reliability
1.130(28.70)
1.120(28.40)
0.570(14.50)
0.530(13.40)
0.685(16.70)
0.618(15.70)
* Low reverse current
* Low forward voltage drop
* Ideal for printed circuit board
0.210(5.30)
0.200(5.10)
0.658(16.70)
0.618(15.70)
0.032(0.81)
0.028(0.71)
0.252(6.40)
0.248(6.30)
f
MECHANICAL DATA :
0.100(2.50)
0.090(2.30)
* Case : Molded plastic with heatsink integrally
mounted in the bridge encapsulation
* Epoxy : UL94V-O rate flame retardant
* Terminals : plated .25" (6.35 mm). Faston
* Polarity : Polarity symbols marked on case
* Mounting position : Bolt down on heat-sink with
silicone thermal compound between bridge
and mounting surface for maximum heat
transfer efficiency.
0.905(23.0)
0.826(21.0)
0.310(7.87)
0.280(7.11)
Metal Heatsink
Dimensions in inches and ( millimeters )
* Weight : 17.1 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
°
Rating at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
SYMBOL BR3500 BR3501 BR3502 BR3504 BR3506 BR3508 BR3510 UNITS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
RRM
50
35
50
100
70
200
140
200
400
280
400
35
600
420
600
800
560
800
1000
700
V
V
Volts
Volts
RMS
Maximum DC Blocking Voltage
VDC
100
1000
Volts
°
IF(AV)
Amps.
Maximum Average Forward Current Tc = 55 C
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
FSM
400
I
Amps.
A2S
I2t
VF
660
F
Maximum Forward Voltage per Diode at I = 17.5 Amp.
1.0
10
Volts
m
A
°
IR
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Thermal Resistance (Note 1)
Ta = 25 C
°
IR(H)
200
m
A
Ta = 100 C
q
1.5
°
C/W
R JC
q
°
C
Typical Thermal Resistance at Junction to Ambient
Operating Junction Temperature Range
Storage Temperature Range
10
R JA
°
C
TJ
- 40 to + 150
- 40 to + 150
TSTG
°C
Notes :
1. Thermal Resistance from junction to case with units mounted on a 7.5" x 3.5" x 4.6" (19cm.x 9cm.x 11.8cm.) Al.-Finned Plate
UPDATE : APRIL 23, 1998
RATING AND CHARACTERISTIC CURVES ( BR3500 - BR3510 )
FIG.1 - DERATING CURVE FOR OUTPUT
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
RECTIFIED CURRENT
FORWARD SURGE CURRENT
600
42
35
500
400
300
200
100
0
28
21
TJ = 50 °C
14
HEAT-SINK MOUNTING, Tc
7.5" x 3.5" x 4.6" THK.
8.3 ms SINGLE HALF SINE WAVE
JEDEC METHOD
7
0
(19cm x 9cm x 11.8cm)
Al.-Finned plate
0
25
50
75
100
125
150
175
1
2
4
6
10
20
40
60
100
NUMBER OF CYCLES AT 60Hz
CASE TEMPERATURE, ( °C)
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
PER DIODE
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE
100
10
TJ = 100 °C
1.0
10
Pulse Width = 300 ms
1 % Duty Cycle
0.1
TJ = 25 °C
1.0
0.1
TJ = 25 °C
0.01
0
20
40
60
80
100
120 140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
FORWARD VOLTAGE, VOLTS
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