BR1001S [EIC]
SILICON BRIDGE RECTIFIERS; 硅桥式整流器
| 型号： | BR1001S |
| 厂家： | 
EIC DISCRETE SEMICONDUCTORS |
| 描述： | SILICON BRIDGE RECTIFIERS |
| 文件： | 总2页 (文件大小：44K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SILICON BRIDGE RECTIFIERS
BR10
BR1001S
PRV : 100 Volts
Io : 6.0 Ampere
0.520 (13.20)
0.480 (12.20)
AC
+
FEATURES :
0.158 (4.00)
0.142 (3.60)
* High case dielectric strength
* High surge current capability
* High reliability
0.77 (19.56)
0.73 (18.54)
0.290 (7.36)
0.210 (5.33)
AC
* Low reverse current
* Low forward voltage drop
* ldeal for printed circuit board
* Pb / RoHS Free
0.052 (1.32)
0.048 (1.22)
0.75 (19.1)
Min.
0.30 (7.62)
0.25 (6.35)
MECHANICAL DATA :
Dimensions in inches and ( millimeters )
* Case : Reliable low cost construction
utilizing molded plastic tecnique
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per
MIL - STD 202 , Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 6.1 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 C ambient temperature unless otherwise specified.
°
Single phase, half wave, 50 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
SYMBOL
VALUE
UNIT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VR
100
70
V
V
V
A
Maximum Reverse Voltage
100
6.0
IF(AV)
Maximum Average Forward Rectified Current Ta=40°C
Maximum Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Maximum Forward Voltage drob per diode at IF = 9.0 A
Maximum Repetitive Peak Reverse Current
Typical Thermal Resistance at Junction to Ambient ( Note 1 )
Operating Junction Temperature Range
IFSM
200
A
VF
1.0
10
V
mA
IRRM
1.8
°C/W
°C
RqJA
TJ
-40 to + 150
-40 to + 150
Storage Temperature Range
Tstg
°C
Notes :
1 ) Thermal resistance from Junction to ambient with units mounted on a 100cm2 x 1.5 t Al. plate.
Page 1 of 2
Rev. 02 : March 25, 2005
RATING AND CHARACTERISTIC CURVES ( BR1001S )
FIG.1 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
200
160
120
80
10
8
6
4
2
0
°
TJ = 25
C
40
0
0
25
50
75
100
125
150
175
1
2
4
6
10
20
40 60 100
NUMBER OF CYCLES AT 60Hz
AMBIENT TEMPERATURE, ( C)
°
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
PER DIODE
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
10
100
TJ = 100 °C
1.0
0.1
TJ = 25 °C
10
1.0
TJ = 25 °C
Pulse Width = 300 ms
1% Duty Cycle
0.1
0.01
0
40
60
80
100
120
20
140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
FORWARD VOLTAGE, VOLTS
Page 2 of 2
Rev. 02 : March 25, 2005
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