BR1002 [EIC]
SILICON BRIDGE RECTIFIERS; 硅桥式整流器![BR1002](http://pdffile.icpdf.com/pdf1/p00045/img/icpdf/BR1002_238102_icpdf.jpg)
型号: | BR1002 |
厂家: | ![]() |
描述: | SILICON BRIDGE RECTIFIERS |
文件: | 总2页 (文件大小:43K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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SILICON BRIDGE RECTIFIERS
BR1000 - BR1010
PRV : 50 - 1000 Volts
Io : 10 Amperes
BR10
0.520 (13.20)
0.480 (12.20)
0.158 (4.00)
AC
FEATURES :
0.142 (3.60)
* High current capability
* High surge current capability
* High reliability
0.77 (19.56)
0.73 (18.54)
0.290 (7.36)
* Low reverse current
* Low forward voltage drop
* Ideal for printed circuit board
0.210 (5.33)
AC
0.052 (1.32)
0.048 (1.22)
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
0.75 (19.1)
Min.
0.30 (7.62)
0.25 (6.35)
* Lead : Axial lead solderable per
MIL - STD 202 , Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
Dimensions in inches and ( millimeters )
* Weight : 6.1 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 C ambient temperature unless otherw ise specified.
°
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL BR1000 BR1001 BR1002 BR1004 BR1006 BR1008 BR1010
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
UNITS
Volts
Volts
Volts
Amp.
50
35
50
100
70
200
140
200
400
280
400
10
600
420
600
800
560
800
1000
700
VRRM
VRMS
VDC
Maximum DC Blocking Voltage
100
1000
Maximum Average Forw ard Current Tc=55 C
IF(AV)
°
Peak Forw ard Surge Current Single half sine w ave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
300
IFSM
Amp.
I2t
VF
A2S
160
1.0
Maximum Forw ard Voltage per Diode at IF = 5 Amp.
Volts
10
IR
A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Thermal Resistance (Note 1)
Ta = 25 C
°
m
200
Ta = 100 C
IR(H)
A
m
°
2.5
R JC
q
C/W
°
Operating Junction Temperature Range
Storage Temperature Range
- 40 to + 150
- 40 to + 150
TJ
C
C
°
°
TSTG
Notes :
1. Thermal Resistance from junction to case w ith units mounted on a 3.2" x 3.2" x 0.12" (8.2cm.x 8.2cm.x 0.3cm.) Al.-Finned Plate.
UPDATE : APRIL 23, 1998
RATING AND CHARACTERISTIC CURVES ( BR1000 - BR1010 )
FIG.1 - DERATING CURVE FOR OUTPUT
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
RECTIFIED CURRENT
FORWARD SURGE CURRENT
300
12
10
8
250
200
TJ = 50
C
°
6
150
100
50
4
8.3 ms SINGLE HALF SINE WAVE
JEDEC METHOD
HEAT-SINK MOUNTING, Tc
3.2" x 3.2" x 0.12" THK.
2
(8.2cm x8.2cm x 0.3cm) Al.-PLATE
0
0
0
25
50
75
100
125
150
175
1
2
4
6
10
20
40
60 100
NUMBER OF CYCLES AT 60Hz
CASE TEMPERATURE, ( C)
°
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE
PER DIODE
10
100
Pulse Width = 300
1 % Duty Cycle
s
m
TJ = 100 C
°
1.0
0.1
10
1.0
TJ = 25
C
°
TJ = 25
C
°
0.1
0.01
0
20
40
60
80
100
120
140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
0.01
0.4
0.8
1.0
1.2
1.4
1.6
0.6
1.8
FORWARD VOLTAGE, VOLTS
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