1N5819WB [EIC]
SCHOTTKY BARRIER DIODES; 肖特基势垒二极管
| 型号： | 1N5819WB |
| 厂家： | 
EIC DISCRETE SEMICONDUCTORS |
| 描述： | SCHOTTKY BARRIER DIODES |
| 文件： | 总1页 (文件大小：43K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Certificate TH97/10561QM
Certificate TW00/17276EM
SCHOTTKY BARRIER DIODES
1N5817WB - 1N5819WB
SOD-123
2.7
2.6
PRV : 20 - 40 Volts
IO : 1.0 Ampere
MECHANICAL DATA :
* Case : SOD-123
* Weight : 0.01 gram (approximately)
* 1N5817WB Marking Code : A0
* 1N5818WB Marking Code : ME
* 1N5819WB Marking Code : SR
3.9
3.7
Dimensions in millimeters
Absolute Maximum Rating (Ta = 25 °C)
Parameter
Symbol
Value
Unit
DC Reverse Voltage
1N5817WB
20
30
VR
V
1N5818WB
1N5819WB
40
IO
Ptot
TJ
Average Rectified Output Current
Power Dissipation
1.0
A
mW
°C
450
Operating Junction Temperature Range
Storage Temperature Range
-55 to + 150
-55 to + 150
TSTG
°C
Electrical Characteristics (Ta = 25 °C )
Min
Typ
Max
-
Unit
Parameter
Symbol
Reverse Breakdown Voltage
at IR = 1 mA
1N5817WB
1N5818WB
1N5819WB
1N5817WB
1N5818WB
1N5819WB
1N5819WB
1N5819WB
1N5819WB
1N5817WB
1N5818WB
1N5819WB
1N5817WB
1N5818WB
1N5819WB
20
30
40
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
VBR
V
-
-
at VR = 20 V
Reverse Leakage Current
1
at VR = 30 V
at VR = 40 V
at VR = 4 V
at VR = 6 V
at IF = 0.1 A
at IF = 1.0 A
-
1
IR
mA
-
1
-
0.050
0.075
0.45
0.45
0.55
0.60
0.750
0.875
0.900
120
-
Forward Voltage
-
-
-
VF
V
-
at IF = 3.0 A
-
-
-
Diode Capacitance at VR = 4 V, f = 1MHz
CD
-
pF
Page 1 of 1
Rev. 01 : August 22, 2006
相关型号：
1N5819WS
For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications.
TYSEMI
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