1N5819WS [KEXIN]
Schottky Barrier Diodes; 肖特基势垒二极管
| 型号： | 1N5819WS |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | Schottky Barrier Diodes |
| 文件： | 总2页 (文件大小：99K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Diodes
Schottky Barrier Diodes
1N5817WS-1N5819WS
SOD-323
Unit: mm
+0.1
1.7
-0.1
+0.05
0.85
-0.05
Features
For use in low voltage, high frequency inverters
Free wheeling, and polarity protection applications.
+0.1
2.6
-0.1
1.0max
0.475
0.375
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
1N5817WS 1N5818WS 1N5819WS
Unit
V
Non-Repetitive Peak reverse voltage
VRM
20
20
14
30
40
40
28
Peak repetitive Peak reverse voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
30
V
RMS Reverse Voltage
VR(RMS)
IO
21
1
V
A
Average Rectified Output Current
Peak forward surge current @=8.3ms
Repetitive Peak Forward Current
Power Dissipation
25
IFSM
IFRM
Pd
A
625
mA
mW
K/W
250
500
Thermal Resistance Junction to Ambient
Storage temperature
R
JA
-65 to 150
TSTG
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
20
Typ
Max Unit
V
1N5817WS
Reverse breakdown voltage
V(BR)
IR= 1mA
1N5818WS
30
1N5819WS
1N5817WS
1N5818WS
1N5819WS
40
VR=20V
VR=30V
VR=40V
IF=1A
Reverse voltage leakage current
IR
1
mA
0.45
0.75
0.55
0.875
0.6
1N5817WS
1N5818WS
1N5819WS
V
V
IF=3A
IF=1A
Forward voltage
VF
IF=3A
IF=1A
V
IF=3A
0.9
Diode capacitance
CD
VR=4V, f=1MHz
120
pF
Marking
NO.
1N5817WS
SJ
1N5818WS
SK
1N5819WS
SL
Marking
1
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SMD Type
Diodes
1N5817WS-1N5819WS
Typical Characteristics
Fig.2 Maximum Non-Repetitive Peak
Fig.1 Forward Current Derating Curve
Forward Surge Current
Fig.3 Typical Instantaneous Forward Characteristics
Fig.4 Typical Reverse Characteristics
Fig.5 Typical Junction Capacitance
Fig.6 Typical Transient Thermal Impedance
2
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