1G4B1 [EIC]

SILICON BRIDGE RECTIFIERS; 硅桥式整流器
1G4B1
型号: 1G4B1
厂家: EIC DISCRETE SEMICONDUCTORS    EIC DISCRETE SEMICONDUCTORS
描述:

SILICON BRIDGE RECTIFIERS
硅桥式整流器

文件: 总2页 (文件大小:33K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SILICON BRIDGE RECTIFIERS  
WOB  
1(B,G,J)4B1  
PRV : 100 - 600 Volts  
Io : 1.5 Ampere  
0.39 (10.0)  
0.31 (7.87)  
0.22 (5.59)  
0.18 (4.57)  
AC  
FEATURES :  
+
-
1.00 (25.4)  
MIN.  
* High case dielectric strength  
* High surge current capability  
* High reliability  
* Low reverse current  
* Low forward voltage drop  
* Ideal for printed circuit board  
* Pb / RoHS Free  
0.034 (0.86)  
0.028 (0.71)  
-
MECHANICAL DATA :  
AC  
+
0.22 (5.59)  
0.18 (4.57)  
* Case : Reliable low cost construction  
utilizing molded plastic technique  
* Epoxy : UL94V-O rate flame retardant  
* Terminals : Plated leads solderable per  
MIL-STD-202, Method 208 guaranteed  
* Polarity : Polarity symbols marked on case  
* Mounting position : Any  
AC  
0.22 (5.59)  
0.18 (4.57)  
Dimension in inches and (millimeter)  
* Weight : 1.29 grams  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25 °C ambient temperature unless otherwise specified.  
1B4B1  
1G4B1  
400  
1J4B1  
RATING  
Maximum Repetitive Peak Reverse Voltage  
Maximum Average Output Rectified Current, Ta = 50°C  
Maximum Peak One Cycle Surge Forward Current  
(Non Repetitive)  
SYMBOL  
VRRM  
UNIT  
100  
600  
V
A
IF(AV)  
1.5  
50 (50 Hz)  
55 (60 Hz)  
1.2  
IFSM  
VF  
A
V
Maximum Forward Voltage at IF = 1.5 A  
Maximum Repetitive Peak Reverse Current  
at VRRM = Rated, Tj = 150°C  
IRRM  
0.4  
mA  
Tj  
Junction Temperature  
-40 to +150  
-40 to +150  
°C  
°C  
TSTG  
Storage Temperature Range  
Page 1 of 2  
Rev. 02 : March 25, 2005  
RATING AND CHARACTERISTIC CURVES 1(B,G,J)4B1  
FIG.1 - DERATING CURVE FOR OUTPUT  
RECTIFIED CURRENT  
FIG.2 - MAXIMUM NON-REPETITIVE PEAK  
FORWARD SURGE CURRENT  
55  
1.5  
1.2  
TJ = 50 °C  
45  
35  
25  
0.9  
0.6  
60 Hz  
50 Hz  
15  
5
0.3  
0
60 Hz, Resistive or Inductive load.  
0
25  
50  
75  
100  
125  
150  
175  
1
2
4
6
10  
20  
40 60 100  
NUMBER OF CYCLES AT 60Hz  
CASE TEMPERATURE, ( °C)  
FIG.3 - TYPICAL FORWARD CHARACTERISTICS  
50  
30  
10  
TJ = 25 °C  
1
0.5  
0.3  
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
2.8  
3.2  
INSTANTANEOUS FORWARD VOLTAGE, VOLTS  
Page 2 of 2  
Rev. 02 : March 25, 2005  

相关型号:

1G4B42

RECTIFIER STACK (SINGLE PHASE BRIDGE RECTIFIER APPLICATIONS)
TOSHIBA

1G4B42

SILICON BRIDGE RECTIFIER
EIC

1G5

MINIATURE GLASS PASSIVATED JUNCTION RECTIFIER
GOOD-ARK

1G5

HIGH EFFICIENCY RECTIFIER
PFS

1G5

GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER VOLTAGE50 TO 1000V CURRENT 1.0A
GULFSEMI

1G5

AXIAL SILASTIC GUARD JUNCTION STANDARD RECTIFIER
MIC

1G6

MINIATURE GLASS PASSIVATED JUNCTION RECTIFIER
GOOD-ARK

1G6

GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER VOLTAGE50 TO 1000V CURRENT 1.0A
GULFSEMI

1G6

HIGH EFFICIENCY RECTIFIER
PFS

1G6

AXIAL SILASTIC GUARD JUNCTION STANDARD RECTIFIER
MIC

1G6002

RESISTOR, TEMPERATURE DEPENDENT, NTC, 60000 ohm, SURFACE MOUNT
VISHAY