1G4B42 [EIC]

SILICON BRIDGE RECTIFIER; 硅桥式整流器
1G4B42
型号: 1G4B42
厂家: EIC DISCRETE SEMICONDUCTORS    EIC DISCRETE SEMICONDUCTORS
描述:

SILICON BRIDGE RECTIFIER
硅桥式整流器

整流二极管 桥式整流二极管 光电二极管
文件: 总2页 (文件大小:36K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SILICON BRIDGE RECTIFIER  
1(B,G,J)4B42  
DFM  
PRV : 100 ~ 600 Volts  
Io : 1.0 Ampere  
0.255(6.5)  
0.245(6.2)  
0.315(8.00)  
0.285(7.24)  
~
~
FEATURES :  
* High current capability  
* High surge current capability  
* High reliability  
0.335(8.51)  
0.320(8.12)  
0.255(6.5)  
0.245(6.2)  
* Low reverse current  
* Low forward voltage drop  
* Ideal for printed circuit board  
* Pb / RoHS Free  
0.122(3.10)  
0.100(2.60)  
0.185(4.69)  
0.150(3.81)  
0.0130(0.33)  
0.0086(0.22)  
0.045(1.14)  
0.035(0.89)  
0.350(8.9)  
0.300(7.6)  
0.205(5.2)  
0.195(5.0)  
MECHANICAL DATA :  
* Case : Molded plastic  
* Epoxy : UL94V-O rate flame retardant  
* Terminals : Plated Lead solderable per MIL-STD-  
202, Method 208  
Dimensions in inches and ( millimeters )  
* Polarity : Polarity symbols marked on body  
* Mounting position : Any  
* Weight : 0.42 gram  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25 °C ambient temperature unless otherwise specified.  
60 Hz, resistive or inductive load.  
RATING  
1B4B42  
1G4B42  
1J4B42  
UNIT  
SYMBOL  
VRRM  
IF(AV)  
Maximum Repetitive Peak Reverse Voltage  
Maximum Average Forward Output Current  
Maximum Peak One Cycle Surge Forward  
Current ( Non-Repetitive )  
100  
400  
600  
V
A
1.0  
30 ( 50Hz )  
33 ( 60Hz )  
IFSM  
VF  
A
V
Maximum Instantaneous Forward Voltage  
per element at IF = 1.0 A  
1.0  
10  
Maximum Repetitive Peak Reverse Current  
at VRRM = Rated  
IR  
mA  
Maximum Thermal Resistance (Junction to Ambient)  
Junction Temperature  
75  
°C/W  
°C  
RqJA  
TJ  
- 40 to + 150  
- 40 to + 150  
TSTG  
Storage Temperature Range  
°C  
Page 1 of 2  
Rev. 02 : March 25, 2005  
RATING AND CHARACTERISTIC CURVES ( 1(B,G,J)J4B42  
FIG.1 - DERATING CURVE FOR OUTPUT  
RECTIFIED CURRENT  
FIG.2 - MAXIMUM NON-REPETITIVE PEAK  
FORWARD SURGE CURRENT  
PER BRIDGE ELEMENT  
50  
40  
30  
20  
10  
1.0  
0.8  
0.6  
0.4  
0.2  
TJ = 150 °C  
60Hz RESISTIVE OR  
INDUCTIVE LOAD  
SINGLE SINE-WAVE  
(JEDEC METHOD)  
0
0
0
25  
50  
75  
100  
125  
150  
175  
1
2
4
6
10  
20  
40 60 100  
NUMBER OF CYCLES AT 60Hz  
AMBIENT TEMPERATURE, ( °C)  
FIG.3 - TYPICAL FORWARD CHARACTERISTICS  
FIG.4 - TYPICAL REVERSE CHARACTERISTICS  
PER BRIDGE ELEMENT  
100  
10  
TJ = 125 °C  
10  
1
Pulse Width = 300 ms  
2% Duty Cycle  
1.0  
0.1  
TJ = 25 °C  
TJ = 25 °C  
0.1  
0.01  
2.0  
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8  
FORWARD VOLTAGE, VOLTS  
0.01  
0
20  
40  
60  
80  
100  
120 140  
PERCENT OF RATED PEAK  
REVERSE VOLTAGE, (%)  
Page 2 of 2  
Rev. 02 : March 25, 2005  

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