SK115 [DIOTEC]
Surface Mount Schottky Rectifier Diodes;
| 型号： | SK115 |
| 厂家： | 
DIOTEC SEMICONDUCTOR |
| 描述： | Surface Mount Schottky Rectifier Diodes |
| 文件： | 总2页 (文件大小：119K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SK12 ... SK115
SK12 ... SK115
Surface Mount Schottky Rectifier Diodes
Schottky-Gleichrichterdioden für die Oberflächenmontage
Version 2014-07-03
5± 0.2
Nominal current
Nennstrom
1 A
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
20...150 V
Plastic case
Kunststoffgehäuse
~ SMA
~ DO-214AC
1± 0.3
0.15
Weight approx. – Gewicht ca.
0.07g
Type
Typ
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
4.5± 0.3
Dimensions - Maße [mm]
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings
Grenzwerte
Type
Typ
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
VRRM [V]
Surge peak reverse voltage
Stoßspitzensperrspannung
VRSM [V]
Forward voltage
Durchlass-Spannung
VF [V] 1)
SK12
SK13
SK14
SK15
SK16
SK18
SK110
SK115
20
30
20
30
< 0.50
< 0.50
< 0.50
< 0.70
< 0.70
< 0.85
< 0.85
< 0.85
40
40
50
50
60
60
80
80
100
150
100
150
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
TT = 100°C IFAV
1 A
Repetitive peak forward current
Periodischer Spitzenstrom
f > 15 Hz
TA = 25°C
TA = 25°C
IFRM
IFSM
i2t
6 A 2)
30/33 A
4.5 A2s
Peak forward surge current, 50/60 Hz half sine-wave
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
Operating junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
-50...+150°C
-50...+150°C
Tj
TS
1
2
IF = 1 A, Tj = 25°C
Max. temperature of the terminals TT = 100°C – Max. Temperatur der Anschlüsse TT = 100°C
© Diotec Semiconductor AG
http://www.diotec.com/
1
SK12 ... SK115
Characteristics
Kennwerte
Leakage current
Sperrstrom
SK12 ... SK110 Tj = 25°C
SK115
VR = VRRM
IR
< 0.5 mA
< 0.2 mA
SK12 ... SK110 Tj = 100°C VR = VRRM
SK115
IR
< 5.0 mA
< 2.0 mA
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
RthA
RthT
< 70 K/W 1)
Thermal resistance junction to terminal
< 30 K/W
Wärmewiderstand Sperrschicht − Anschluss
102
[A]
120
[%]
SK12...14
100
80
10
SK15...16
1
60
40
SK18...115
10-1
IF
20
IFAV
0
25°C
125°C
10-2
0
0.4
0.6
1.0
VF
[V]
0
TT
100
150
50
[°C]
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
Rated forward current vs. temp. of the terminals
Zul. Richtstrom in Abh. v. d. Temp. der Terminals
104
Tj = 25°C
f = 1.0 MHz
[pF]
[µA]
103
Tj =100°C
T =75°C
j
102
101
T =25°C
j
Cj
20V...40V
IR
1
50V...150V
20V...40V
[%]
100
[V]
VR
VRRM
0
40
60
80
Junction capacitance vs. reverse voltage (typical)
Sperrschichtkapazität in Abh. v.d. Sperrspg. (typ.)
Typ. instantaneous leakage current vs. reverse voltage
Typ. Sperrstrom (Augenblickswert) ü. Sperrspannung
1
Mounted on P.C. board with 25 mm2 copper pads at each terminal
Montage auf Leiterplatte mit 25 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2
http://www.diotec.com/
© Diotec Semiconductor AG
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