SK1150 [SUNMATE]
1A Patch Schottky diode 150V SMA series;
| 型号： | SK1150 |
| 厂家： | 
SUNMATE electronic Co., LTD |
| 描述： | 1A Patch Schottky diode 150V SMA series |
| 文件： | 总2页 (文件大小：309K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SK1150 - SK1200
SURFACE MOUNT SCHOTTKY BARRIER DIODES
VOLTAGE RANGE: 150 - 200V
CURRENT: 1.0 A
Features
!
!
!
Schottky Barrier Chip
Ideally Suited for Automatic Assembly
Low Power Loss, High Efficiency
!
!
!
For Use in Low Voltage Application
Guard Ring Die Construction
Plastic Case Material has UL Flammability
B
SMA(DO-214AC)
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
Classification Rating 94V-O
Dim
MinMax
Mechanical Data
A
B
C
D
E
G
H
J
2.29
4.00
1.27
0.15
4.80
0.10
0.76
2.01
2.92
4.60
1.63
0.31
5.59
0.20
1.52
2.62
A
J
C
!
!
Case: SMA/DO-214AC, Molded Plastic
Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
Polarity: Cathode Band or Cathode Notch
Marking: Type Number
D
!
!
Weight: 0.064 grams (approx.)
!
G
H
E
All Dimensions in mm
TA = 25ꢀC unless otherwise specified
Maximum Ratings and Electrical Characteristics
For capacitive load, derate current by 20%.
Single phase, half wave, 60Hz, resistive or inductive load.
Symbol
Characteristic
SK1150
SK1200
Unit
Maximum repetitive peak reverse voltage
Maximum RMS voltage
150
105
150
200
140
200
Volts
Volts
Volts
VRRM
VRMS
VDC
Maximum DC blocking voltage
Maximum average forward rectified current
at TL(see fig.1)
I(AV)
1.0
Amp
Peak forward surge current
IFSM
30.0
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Amps
VF
IR
0.85
Maximum instantaneous forward voltage at 1.0A
0.95
Volts
mA
Maximum DC reverse current
at rated DC blocking voltage
TA=25 C
0.2
2.0
TA=100 C
Typical junction capacitance (NOTE 1)
90
CJ
pF
C/W
C
Typical thermal resistance (NOTE 2)
Operating junction temperature range
RθJA
88.0
-50 to +150
TJ,
Storage temperature range
C
TSTG
-50 to +150
Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas
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RATINGS AND CHARACTERISTIC CURVES SK1150 THRU SK1200
FIG. 1- FORWARD CURRENT DERATING CURVE
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
30
24
18
12
1.0
0.8
0.6
0.4
0.2
0
Single Phase
Half Wave 60Hz
Resistive or
inductive Load
6
0
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
0
25
50
75
100
125
150
175
1
10
100
AMBIENT TEMPERATURE, C
NUMBER OF CYCLES AT 60 Hz
FIG. 3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
50
100
TJ=25 C
10.0
10
1
TJ=100 C
TJ=75 C
1
0.1
0.01
0.1
TJ=25 C
SK1150
SK1200
0.001
0
20
40
60
80
100
PERCENT OF PEAK REVERSE VOLTAGE,%
0.01
0
0.2 0.4
0.6
0.8 1.0 1.2 1.4 1.6
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
FIG. 5-TYPICAL JUNCTION CAPACITANCE
FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE
400
200
100
TJ=25 C
10
1
20
0.01
0.1
1
10
100
0.1
2
0.1
1.0
10
100
REVERSE VOLTAGE,VOLTS
t,PULSE DURATION,sec.
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相关型号：
SK1150-L-TP
Rectifier Diode, Schottky, 1 Element, 1A, 150V V(RRM), Silicon, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN
MCC
SK1150-LT-TP
Rectifier Diode, Schottky, 1 Element, 1A, 150V V(RRM), Silicon, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN
MCC
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