KBU12A_10 [DIOTEC]
Silicon-Bridge-Rectifiers; 硅桥式整流器
| 型号： | KBU12A_10 |
| 厂家： | 
DIOTEC SEMICONDUCTOR |
| 描述： | Silicon-Bridge-Rectifiers |
| 文件： | 总2页 (文件大小：110K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
KBU12A ... KBU12M
KBU12A ... KBU12M
Silicon-Bridge-Rectifiers
Silizium-Brückengleichrichter
Version 2010-04-29
Nominal current
Nennstrom
12 A
35...700 V
5.7
23.5
3.8±0.3
Alternating input voltage
Eingangswechselspannung
Plastic case
Kunststoffgehäuse
23.5 x 5.7 x 19.3 [mm]
7 g
KBU ...
3.3
1.2
Weight approx.
Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
5.08
Standard packaging bulk
Dimensions - Maße [mm]
Standard Lieferform lose im Karton
Recognized Product – Underwriters Laboratories Inc.® File E175067
Anerkanntes Produkt – Underwriters Laboratories Inc.® Nr. E175067
Maximum ratings
Grenzwerte
Type
Typ
Max. alternating input voltage
Max. Eingangswechselspannung
VVRMS [V]
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
VRRM [V] 1)
KBU12A
KBU12B
KBU12D
KBU12G
KBU12J
KBU12K
KBU12M
35
70
50
100
200
400
600
800
1000
140
280
420
560
700
Repetitive peak forward current
Periodischer Spitzenstrom
f > 15 Hz
TA = 25°C
TA = 25°C
IFRM
IFSM
i2t
60 A 2)
270/300 A
375 A2s
Peak forward surge current, 50/60 Hz half sine-wave
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
Operating junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-50...+150°C
-50...+150°C
Admissible torque for mounting
Zulässiges Anzugsdrehmoment
M3.5
9 ± 10% lb.in.
1 ± 10% Nm
1
2
Valid per diode – Gültig pro Diode
Valid, if leads are kept at ambient temperature TA = 50°C at a distance of 5 mm from case
Gültig, wenn die Anschlussdrähte in 5 mm vom Gehäuse auf Umgebungstemperatur TA = 50°C gehalten werden
© Diotec Semiconductor AG
http://www.diotec.com/
1
KBU12A ... KBU12M
Characteristics
Kennwerte
Max. rectified current without cooling fin
Dauergrenzstrom ohne Kühlblech
TA = 50°C R-load
C-load
IFAV
IFAV
8.4 A 1)
7.4 A 1)
Max. rectified current with cooling fin 300 cm²
Dauergrenzstrom mit Kühlblech 300 cm2
TA = 50°C R-load
C-load
IFAV
IFAV
12.0 A
9.6 A
Forward voltage – Durchlass-Spannung
Leakage current – Sperrstrom
Tj = 25°C IF = 12 A
Tj = 25°C VR = VRRM
VF
IR
< 1.0 V 2)
< 10 µA
Thermal resistance junction to case
RthC
< 2.7 K/W
Wärmewiderstand Sperrschicht – Gehäuse
Type
Typ
Max. admissible load capacitor
Max. zulässiger Ladekondensator
CL [µF]
Min. required protective resistor
Min. erforderl. Schutzwiderstand
Rt [Ω]
KBU12A
KBU12B
KBU12D
KBU12G
KBU12J
KBU12K
KBU12M
20000
10000
5000
2500
1500
1000
800
0.2
0.4
0.8
1.6
2.4
3.2
4.0
103
120
[%]
[A]
102
100
Tj = 125°C
80
Tj = 25°C
10
60
40
1
IF
20
IFAV
270a-(12a-1v)
10-1
0
0
0.4
1.0
1.4
VF 0.8
1.2
[V] 1.8
TA
100
150
50
[°C]
Rated forward current versus ambient temperature
Zul. Richtstrom in Abh. von der Umgebungstemp.
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
1
2
Valid, if leads are kept at ambient temperature TA = 50°C at a distance of 5 mm from case
Gültig, wenn die Anschlussdrähte in 5 mm vom Gehäuse auf Umgebungstemperatur TA = 50°C gehalten werden
Valid per diode – Gültig pro Diode
2
http://www.diotec.com/
© Diotec Semiconductor AG
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