KBU12M [SEMIKRON]

Bridge Rectifier Diode, 1 Phase, 8.4A, 1000V V(RRM), Silicon, 23.50 X 7 MM, 19.30 MM HEIGHT, PLASTIC PACKAGE-4;
KBU12M
型号: KBU12M
厂家: SEMIKRON INTERNATIONAL    SEMIKRON INTERNATIONAL
描述:

Bridge Rectifier Diode, 1 Phase, 8.4A, 1000V V(RRM), Silicon, 23.50 X 7 MM, 19.30 MM HEIGHT, PLASTIC PACKAGE-4

局域网 二极管
文件: 总2页 (文件大小:91K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
KBU 12A ... KBU 12M  
Silicon-Bridge Rectifiers  
Silizium-Brückengleichrichter  
Nominal current – Nennstrom  
12.0 A  
Alternating input voltage  
Eingangswechselspannung  
35…700 V  
Plastic case – Kunststoffgehäuse  
Weight approx. – Gewicht ca.  
23.5 x 7 x 19.3 [mm]  
8 g  
Plastic material has UL classification 94V-0  
Gehäusematerial UL94V-0 klassifiziert  
Dimensions / Maße in mm  
Standard packaging: bulk  
Standard Lieferform: lose im Karton  
Maximum ratings  
Grenzwerte  
Type  
Typ  
Alternating input volt. Rep. peak reverse volt.1)  
Surge peak reverse volt.1)  
Eingangswechselspg. Period. Spitzensperrspg.1) Stoßspitzensperrspanng.1)  
VVRMS [V]  
35  
VRRM [V]  
50  
VRSM [V]  
80  
KBU 12A  
KBU 12B  
KBU 12D  
KBU 12G  
KBU 12J  
KBU 12K  
KBU 12M  
70  
140  
280  
420  
560  
700  
100  
200  
400  
600  
800  
1000  
130  
250  
450  
700  
1000  
1200  
Repetitive peak forward current  
Periodischer Spitzenstrom  
f > 15 Hz  
TA = 25/C  
TA = 25/C  
IFRM  
60 A 2)  
300 A  
Peak forward surge current, 60 Hz half sine-wave  
Stoßstrom für eine 60 Hz Sinus-Halbwelle  
IFSM  
Rating for fusing, t < 10 ms  
Grenzlastintegral, t < 10 ms  
i2t  
375 A2s  
Operating junction temperature – Sperrschichttemperatur  
Storage temperature – Lagerungstemperatur  
Tj  
– 50…+150/C  
TS – 50…+150/C  
Admissible torque for mounting  
Zulässiges Anzugsdrehmoment  
M 4  
9 ± 10% lb.in.  
1 ± 10% Nm  
1
)
)
Valid for one branch – Gültig für einen Brückenzweig  
Valid, if leads are kept at ambient temperature at a distance of 10 mm from case  
Gültig, wenn die Anschlußdrähte in 10 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden  
2
334  
01.04.2000  
KBU 12A ... KBU 12M  
Characteristics  
Kennwerte  
Max. fwd. current without cooling fin  
Dauergrenzstrom ohne Kühlblech  
TA = 50/C  
TA = 50/C  
R-load  
C-load  
IFAV  
IFAV  
8.4 A  
7.4 A  
Max. current with cooling fin 300 cm2  
Dauergrenzstrom mit Kühlblech 300 cm2  
R-load  
C-load  
IFAV  
IFAV  
12.0 A  
9.6 A  
Forward voltage – Durchlaßspannung  
Leakage current – Sperrstrom  
Tj = 25/C  
Tj = 25/C  
IF = 12 A  
VF  
IR  
< 1.0 V 1)  
< 10 : A  
VR = VRRM  
Thermal resistance junction to case  
RthC  
< 3.3 K/W  
Wärmewiderstand Sperrschicht – Gehäuse  
Type  
Typ  
Max. admissible load capacitor  
Max. zulässiger Ladekondensator  
Min. required protective resistor  
Min. erforderl. Schutzwiderstand  
CL [: F]  
20000  
10000  
5000  
2500  
1500  
Rt [S]  
0.2  
0.4  
0.8  
1.6  
2.4  
3.2  
4.0  
KBU 12A  
KBU 12B  
KBU 12D  
KBU 12G  
KBU 12J  
KBU 12K  
KBU 12M  
1000  
800  
1
)
Valid for one branch – Gültig für einen Brückenzweig  
335  
01.04.2000  

相关型号:

KBU15005

SILICON BRIDGE RECTIFIERS
HY

KBU15005

SINGLE PHASE 10/15/25/35AMPS. SILICON BRIDGE RECTIFIERS
YANGJIE

KBU15005

BRIDGE RECTIFIERS 10 Amps
RFE

KBU15005

SILICON BRIDGE RECTIFIERS GLASS PASSIVATED BRIDGE RECTIFIERS
CHENG-YI

KBU15005G

GLASS PASSIVATED BRIDGE RECTIFIERS
HY

KBU15005_V01

SILICON BRIDGE RECTIFIERS
CHENG-YI

KBU1501

SILICON BRIDGE RECTIFIERS
HY

KBU1501

SINGLE PHASE 10/15/25/35AMPS. SILICON BRIDGE RECTIFIERS
YANGJIE

KBU1501

BRIDGE RECTIFIERS 10 Amps
RFE

KBU1501

SILICON BRIDGE RECTIFIERS GLASS PASSIVATED BRIDGE RECTIFIERS
CHENG-YI

KBU1501G

GLASS PASSIVATED BRIDGE RECTIFIERS
HY

KBU1502

SILICON BRIDGE RECTIFIERS
HY