BC338-25 [DIOTEC]
Si-Epitaxial PlanarTransistors; 硅外延PlanarTransistors
| 型号： | BC338-25 |
| 厂家： | 
DIOTEC SEMICONDUCTOR |
| 描述： | Si-Epitaxial PlanarTransistors |
| 文件： | 总2页 (文件大小：87K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC 337 / BC 338
NPN
General Purpose Transistors
NPN
Si-Epitaxial PlanarTransistors
Power dissipation – Verlustleistung
625 mW
Plastic case
TO-92
(10D3)
Kunststoffgehäuse
Weight approx. – Gewicht ca.
0.18 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Pinning
Standard Lieferform gegurtet in Ammo-Pack
1 = C 2 = B 3 = E
Maximum ratings (TA = 25ꢀC)
Grenzwerte (TA = 25ꢀC)
BC 337
45 V
50 V
BC 338
25 V
30 V
Collector-Emitter-voltage
Collector-Base-voltage
Emitter-Base-voltage
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (DC)
Junction temp. – Sperrschichttemperatur
B open
E open
C open
VCE0
VCB0
VEB0
Ptot
IC
5 V
625 mW 1)
800 mA
150ꢀC
Tj
Storage temperature – Lagerungstemperatur
TS
- 55…+ 150ꢀC
Characteristics (Tj = 25ꢀC)
Kennwerte (Tj = 25ꢀC)
Min.
Typ.
Max.
DC current gain – Kollektor-Basis-Stromverhältnis
Group -16
Group -25
Group -40
hFE
hFE
hFE
100
160
250
160
250
400
250
400
630
VCE = 1 V, IC = 100 mA
Collector-Emitter cutoff current – Kollektorreststrom
VCE = 40 V
VCE = 20 V
VCE = 40 V, Tj = 125ꢀC
VCE = 20 V, Tj = 125ꢀC
BC 337
BC 338
BC 337
BC 338
ICES
ICES
ICES
ICES
–
–
–
–
–
–
–
–
200 nA
200 nA
10 ꢀA
10 ꢀA
1
)
Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
4
01.11.2003
General Purpose Transistors
BC 337 / BC 338
Characteristics (Tj = 25ꢀC)
Kennwerte (Tj = 25ꢀC)
Min.
Typ.
Max.
Collector-Emitter breakdown voltage
Collector-Emitter Durchbruchspannung
BC 337
V(BR)CES
V(BR)CES
V(BR)CES
V(BR)CES
40 V
20 V
50 V
30 V
–
–
–
–
–
–
–
–
IC = 10 mA
IC = 0.1 mA
BC 338
BC 337
BC 338
Emitter-Base breakdown voltage
Emitter-Basis-Durchbruchspannung
IE = 10 ꢀA
V(BR)EB0
5 V
–
–
–
Collector saturation volt. – Kollektor-Sättigungsspannung
IC = 500 mA, IB = 50 mA
Base-Emitter voltage – Basis-Emitter-Spannung
VCE = 1 V, IC = 300 mA
Gain-Bandwidth Product – Transitfrequenz
VCE = 5 V, IC = 10 mA, f = 50 MHz
Collector-Base Cap. – Kollektor-Basis-Kap.
VCB = 10 V, f = 1 MHz
VCEsat
VBE
fT
–
–
0.7 V
1.2 V
–
–
–
100 MHz
12 pF
CCB0
–
–
Thermal resistance junction to ambient air
RthA
200 K/W 1)
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
BC 327 / BC 328
Available current gain groups per type
BC 337-16 BC 337-25
BC 338-16 BC 338-25
BC337-40
BC338-40
Lieferbare Stromverstärkungsgruppen pro Typ
1
)
Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
01.11.2003
5
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