PI3EQX1004B1ZHEX [DIODES]
Telecom Circuit,;
| 型号： | PI3EQX1004B1ZHEX |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Telecom Circuit, 电信 电信集成电路 |
| 文件： | 总11页 (文件大小：1443K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
A product Line of
Diodes Incorporated
PI3EQX1004B1
2-Port USB3.1 Gen-2 10Gbps ReDriver
Features
Description
ꢀÎ5 & 10Gbps serial link with linear equalizer
ꢀÎUSB3.1 and USB3.0 Compatible
ꢀÎFull Compliancy to USB3.1 Super Speed Standard
ꢀÎFour 10Gbps differential signal pairs
ꢀÎPin Adjustable Receiver Equalization
ꢀÎPin Adjustable Flat Gain
ꢀÎ100Ω Differential CML I/O’s
ꢀÎAutomatic Receiver Detect
ꢀÎAuto "Slumber" mode for adaptive power management
ꢀÎSingle Supply Voltage: 3.3V
ꢀÎPackaging:
e PI3EQX1004B1 is a low power, high performance 10.0 Gbps
2-Port USB 3.1 linear ReDriver™ designed specifically for the USB
3.1 protocol.
e device provides programmable equalization, and flat gain to
optimize performance over a variety of physical mediums by re-
ducing Inter-Symbol Interference. PI3EQX1004B1 supports two
100Ω Differential CML data I/O’s between the Protocol ASIC to
a switch fabric, over cable, or to extend the signals across other
distant data pathways on the user’s platform.
e integrated equalization circuitry provides flexibility with
signal integrity of the signal before the ReDriver. Each channel
operates fully independently. e channels’ input signal level de-
termines whether the output is active.
Î42-pin, TQFN 3.5 x 9mm (ZH42)
e PI3EQX1004B1 also includes an automatic receiver detect
function. e receiver detection loop will be active again if the
corresponding channel’s signal detector is idle for longer than
7.3ms. e channel will then move to Unplug Mode if load not
detected, or it will return to Low Power Mode (Slumber Mode)
due to inactivity.
Block Diagram
Input Level detect
to control logic
+
–
+
–
RXAP
TXAP
+
–
+
TXAN
–
RXAN
Equalizer
EQA
Output buꢀer
Flat gain FGA
Equalizer
EQB
Flat gain FGB
Output buꢀer
TXBP
RXBP
+
–
+
–
+
–
Figure1
RXBN
TXBN
+
–
Input Level detect
to control logic
Pericom
Input Level detect
to control logic
PC Monitor
+
–
USB 3.1
Pericom
ReDriver
USB 3.1
ReDriver
+
–
RXCP
TXCP
+
–
+
TXCN
–
RXCN
Equalizer
EQC
Output buꢀer
Flat gain FGC
Notebook
Smart Phone
Equalizer
EQD
Flat gain FGD
Output buꢀer
TXDP
RXDP
+
–
+
–
+
–
RXDN
TXDN
+
–
Input Level detect
to control logic
EQA/B/C/D
FGA/B/C/D
FG/EQ
Control Logic
External Storage
USB 3.0 Cable
Device
EN_AB/EN_CD
Power Management
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September 2017
Diodes Incorporated
PI3EQX1004B1
Document Number DS40596 Rev 2-2
1
A product Line of
Diodes Incorporated
PI3EQX1004B1
Pin Diagram (42-pin, TQFN 3.5x9mm) ZH42
42
41
40
39
1
38
FGA
NC
2
3
37
36
EN_AB
VDD3P3
NC
VDD3P3
TXAP
4
5
35
34
33
32
RXAP
RXAN
TXAN
GND
TEST1# (VDD3P3)
VDD3P3
6
NC(VDD3P3)
VDD3P3
7
8
31
30
29
28
27
26
25
TXBP
TXBN
FGC
RXBP
RXBN
EQB
9
10
11
EQC
FGB
12
13
RXCN
RXCP
TXCN
TXCP
VDD3P3
14
15
16
17
VDD3P3
NC (VDD3P3)
TXDN
24
23
22
TEST2# (VDD3P3)
RXDN
TXDP
RXDP
18
19
20
21
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PI3EQX1004B1
Document Number DS40596 Rev 2-2
2
A product Line of
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PI3EQX1004B1
Pin Description (42-pin, TQFN 3.5x9mm)
Pin #
Pin Name
Type Description
3, 7, 14, 21, 25,
32, 36
VDD
Power 3.3V power supply, +/-0.3V
1, 28
FGA, FGB
e DC flat gain selection. 4-level input pins. With internal 100kΩ pull-up
resistor and 200kΩ pull-down resistor.
Input
Input
10, 19
42, 29
11, 18
4, 5
FGC, FGD
EQA, EQB
e EQ selection. 4-level input pins. With internal 100kΩ pull-up resistor and
200kΩ pull-down resistor.
EQC, EQD
RXAP, RXAN
RXBP, RXBN
RXCP, RXCN
RXDP, RXDN
TXAP, TXAN
TXBP, TXBN
TXCP, TXCN
TXDP, TXDN
31, 30
13, 12
22, 23
35, 34
8, 9
CML input terminals. With selectable input termination between 50Ω to VDD,
67kΩ to VbiasRx or 67kΩ to GND.
Input
CML output terminals. With selectable output termination between 50Ω to
VDD, 6kΩ to VDD, 6kΩ to VbiasTx or Hi-Z.
Output
26, 27
17, 16
Channel Enable. With internal 300kΩ pull-up resistor.
2
EN_AB
EN_CD
Input “High” – Channel is in normal operation.
“Low” – Channel is in power down mode.
GND Supply Ground
20
Center Pad
GND
Test1#
Test2#
NC
6
Input Connect to VDD is recommended
24
15, 33
NC
NC
NC pin connect to VDD is recommended
NC
37, 38, 39, 40, 41
NC
Power Management
Notebooks, netbooks, and other power sensitive consumer devices require judicious use of power in order to maximize battery life.
In order to minimize the power consumption of our devices, Diodes has added an additional adaptive power management feature.
When a signal detector is idle for longer than 1.3ms, the corresponding channel will move to low power mode ONLY. (It means both
channels will move to low power mode individually).
In the low power mode, the signal detector will still be monitoring the input channel. If a channel is in low power mode and the input
signal is detected, the corresponding channel will wake-up immediately. If a channel is in low power mode and the signal detector
is idle longer than 6ms, the receiver detection loop will be active again. If load is not detected, then the Channel will move to Device
Unplug Mode and monitor the load continuously. If load is detected, it will return to Low Power Mode and receiver detection will be
active again per 6ms.
Operating Modes
Mode
R
R
OUT
IN
PD
67kΩ to GND
67kΩ to VbiasRx
50Ω to Vdd
HIZ
Unplug Mode
Deep Slumber Mode
Slumber Mode
Active Mode
6kΩ to VbiasTx
6kΩ to VbiasTx
6kΩ to Vdd
50Ω to Vdd
50Ω to Vdd
50Ω to Vdd
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September 2017
Diodes Incorporated
PI3EQX1004B1
Document Number DS40596 Rev 2-2
3
A product Line of
Diodes Incorporated
PI3EQX1004B1
Equalization Setting:
EQA/B/C/D are the selecꢀon pins for the equalizaꢀon selecꢀon
Equalizer setting (dB)
EQA/B/C/D
0 (Tie 0Ω to GND)
R (Tie Rext to GND)
F (Leave Open)
@2.5GHz
6.7
@5GHz
12.4
8.0
3.5
5.3
10.6
14.6
1 (Tie 0Ω to VDD)
8.4
Flat Gain Setting:
FGA/B/C/D are the selecꢀon pins for the DC gain
Flat Gain Settings
FGA/B/C/D
0 (Tie 0Ω to GND)
R (Tie Rext to GND)
F (Leave Open)
dB
-1.6
-0.5
1.0
1 (Tie 0Ω to VDD)
2.7
Channel Enable Setting:
EN_AB/EN_CD are the channel enable pins for channels A&B and C&D respecꢀvely
Channel Enable Setting
Setting
EN
0
Disabled
1
Enabled (Default)
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September 2017
Diodes Incorporated
PI3EQX1004B1
Document Number DS40596 Rev 2-2
4
A product Line of
Diodes Incorporated
PI3EQX1004B1
Maximum Ratings
(Above which useful life may be impaired. For user guidelines, not tested.)
Note:
Stresses greater than those listed under MAXIMUM RATINGS
may cause permanent damage to the device. is is a stress rating
only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of
this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reliability.
Storage Temperature........................................................ –65°C to +150°C
Supply Voltage to Ground Potential...................................–0.5V to +3.8V
DC SIG Voltage..........................................................–0.5V to V +0.5V
DD
Output Current ............................................................... –25mA to +25mA
ESD, Human Body Model ....................................................-2kV to +2kV
Power Dissipation Continuous........................................................... 1.2W
Max Junction Temperature................................................................125°C
o
Control pin Specifications (VDD = 3.3 ± 0.3V TA = 0 to 70 C)
Symbol
Parameter
Min.
Typ.
Max.
Units
2-level control pins
VIH
VIL
IIH
IIL
DC input logic High
DC input logic Low
Input High current
Input Low current
VDD*0.65
V
V
VDD*0.35
25
uA
uA
-25
4-level control pins
VIH
VIF
VIR
VIL
IIH
DC input logic "High"
0.92*VDD
0.59*VDD
0.25*VDD
VDD
0.67*VDD
0.33*VDD
GND
V
V
DC input logic "Float"
0.75*VDD
0.41*VDD
0.08*VDD
50
DC input logic "With Rext to GND"
DC input logic "Low"
V
V
Input High current
uA
uA
kΩ
IIL
Input Low current
-50
Rext
64.6
68
71.4
External resistor connects to GND (±5%)
o
AC/DC Electrical Characteristics (VDD = 3.3 ± 0.3V TA = 0 to 70 C)
Power and Latency
Symbol
Parameter
Conditions
Min. Typ. Max. Units
V
dd-3.3
Supply voltage
3.0
3.3
3.6
V
EN_AB & EN_CD = 1, 10Gbps, compli-
ance test pattern
I
I
I
Active mode current consumption
Slumber mode current consumption
260
334
mA
active
EN_AB & EN_CD = 1, no input signal
32
0.8
0.6
20
38
1.2
0.9
slumber
longer than T
slumber
Deep slumber mode current con-
sumption
EN_AB & EN_CD = 1 no input signal
longer than T
mA
DeepSlumber
DeepSlumber
EN_AB & EN_CD = 1, no output load
is detected
I
Unplug mode current consumption
unplug
Power down mode current consump-
tion
I
pd
EN_AB & EN_CD = 0
From input to output
100
2
µA
t
Latency
ns
pd
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September 2017
Diodes Incorporated
PI3EQX1004B1
Document Number DS40596 Rev 2-2
5
A product Line of
Diodes Incorporated
PI3EQX1004B1
AC/DC Electrical Characteristics Cont.
Symbol
Parameter
Conditions
Min. Typ. Max. Units
CML Receiver Input (100Ω differential)
Receiver Electrical Specification
C
e parasitic capacitor for RX
1.0
pF
Ω
rxparasitic
R
DC Differential Input Impedance
72
18
120
RX-DIFF-DC
DC impedance limits are need to guar-
antee RxDet. Measured with respect to
GND over a voltage of 500mV max
R
DC single ended input impedance
30
RX-SINGLE_DC
DC input CM input impedance for
V>0 during reset or power down
Z
(Vcm=0 to 500mV)
25
75
kΩ
nF
RX-HIZ-DC-PD
C
V
AC coupling capacitance
265
ac_coupling
Common mode peak voltage
Common mode peak voltage
AC up to 5GHz
150 mVpeak
RX-CM-AC-P
V
RX-CM-DC-Ac-
Between U0 and U1. AC up to 5GHz
+
TX-D+
200 mVpeak
|Avg (|V
+ V
|)/2-Avg (|V
uo
TX-D+
TX-D-
u1
tive-Idle-Delta-P
V
|)/2|
TX-D-
Transmitter Electrical Specification
V
Ouput differential p-p voltage swing Differential Swing |VTX-D+-VTX-D-
|
1.2
Vppd
Ω
TX-DIFF-PP
R
DC Differential TX Impedance
72
120
TX-DIFF-DC
e amount of voltage change al-
lowed during RxDet
V
C
600
265
mV
TX-RCV-DET
AC coupling capacitance
75
nF
UI
UI
ac_coupling
TX-EYE(10Gbps)
TX-EYE(5Gbps)
TX-DJ-
T
T
T
Transmitter eye, Include all jittter
Transmitter eye, Include all jittter
At the silicon pad. 10Gbps
At the silicon pad. 5Gbps
0.646
0.625
Transmitter deterministic jittter
At the silicon pad. 10Gbps
At the silicon pad. 5Gbps
0.17
UI
DD(10Gbps)
T
C
Transmitter deterministic jittter
e parasitic capacitor for TX
0.205
1.1
UI
pF
TX-DJ-DD(5Gbps)
txparasitic
Common mode DC output Imped-
ance
R
18
0
30
Ω
TX-DC-CM
e instantaneous allowed DC com-
mon mode voltage at the connector
side of the AC coupling capacitors
|VTX-D++VTX-D-|/2
|VTX-D++VTX-D-|/2
V
2.2
V
TX-DC-CM
VDD-
2V
V
V
Common-Mode Voltage
VDD
100
V
TX-C
VTX-D++VTX-D- for both time and ampli-
tude
Active mode TX AC common mode
voltage
TX-CM-AC-PP-
mVpp
Active
Common mode delta voltage
V
TX-CM-DC-
Between U0 to U1
200 mV-peak
|Avg (|V
+ V
|)/2-Avg (|V
TX-D- u1 TX-D+
uo
TEX-D+
Active_Idle-Delta
+ V
|)/2|
TX-D-
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September 2017
Diodes Incorporated
PI3EQX1004B1
Document Number DS40596 Rev 2-2
6
A product Line of
Diodes Incorporated
PI3EQX1004B1
AC/DC Electrical Characteristics Cont.
Symbol
Parameter
Conditions
Min. Typ. Max. Units
Between Tx+ and Tx- in idle mode. Use
the HPF to remove DC components. =1/
LPF. No AC and DC signals are applied
to Rx terminals .
V
Idle mode AC common mode delta
TX-Idle-Diff-AC-
pp
10
10
mVppd
mV
voltage|VTX-D+-VTX-D-
|
Between Tx+ and Tx- in idle mode. Use
Idle mode DC common mode delta the LPF to remove DC components. =1/
V
TX-Idle-Diff-DC
voltage|VTX-D+-VTX-D-
|
HPF. No AC and DC signals are applied
to Rx terminals.
Channel Performance
EQx=0
EQx=R
EQx=F
EQx=1
12.4
8.0
Peaking gain (Compensation at
5GHz, relative to 100MHz, 100mV
sine wave input)
dB
dB
dB
10.6
14.6
G
G
p
p-p
Variation around typical
-3
-3
+3
+3
FQx=0
-1.6
-0.5
1.0
FQx=R
FQx=F
Flat gain (100MHz, EQx=F)
F
FQx=1
2.7
Variation around typical
dB
-1dB compression point output swing
(at 100MHz)
V
V
1000
mVppd
SW_100M
-1dB compression point output swing
(at 5GHz)
850
-40
0.6
mVppd
dB
SW_5G
1
DDNEXT
Differential near-end crosstalk
100MHz to 5GHz, Figure2
100MHz to 5GHz, FGx=1, EQx=R,
Figure 3
V
Input-referred noise
mV
mV
noise-input
RMS
100MHz to 5GHz, FGx=1, EQx=1,
Figure 3
0.5
0.8
1
100MHz to 5GHz, FGx=1, EQx=R,
Figure 3
2
V
Output-referred noise
noise-output
RMS
100MHz to 5GHz, FGx=1, EQx=1,
Figure 3
Signal and Frequency Detectors
reshold of LFPS when the input
impedance of the redriver is 67kohm
to VbiasRx only. Used in the unplug
mode.
V
Unplug mode detector threshold
200
800 mVppd
600 mVppd
th_upm
Deep slumber mode detector thresh- LFPS signal threshold in Deep slumber
old mode
V
th_dsm
100
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September 2017
Diodes Incorporated
PI3EQX1004B1
Document Number DS40596 Rev 2-2
7
A product Line of
Diodes Incorporated
PI3EQX1004B1
AC/DC Electrical Characteristics Cont.
Symbol
Parameter
Conditions
Min. Typ. Max. Units
Signal threshold in Active and slumber
mode
V
Active mode detector threshold
45
175 mVppd
400 MHz
th_am
Detect the frequency of the input CLK
pattern
F
LFPS frequency detector
100
th
Note:
1. Measured using a vector-network analyzer (VNA) with -15dBm power level applied to the adjacent input. e VNA detects the signal at the output of the victim
channel. All other inputs and outputs are terminated with 50Ω.
2. Guaranteed by design and characterization.
50Ω
RX1+
RX1-
TX1+
TX1-
50Ω
50Ω
50Ω
AGGRESSOR SIGNAL (-15dBm)
4-PORT
VECTOR
NETWORK
ANALYZER
N52454
TX2+
TX2-
RX2+
RX2-
NEXT XTALK OUTPUT
Figure2. Channel-isolation test configuration
Figure3. Noise test configuration
FR4
Signal
A
B
C
Source
D.U.T.
SMA
SMA
Connector
Connector
In
Out
24IN
Figure4. Test Condition Referenced in the Electrical Characteristic Table
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September 2017
Diodes Incorporated
PI3EQX1004B1
Document Number DS40596 Rev 2-2
8
A product Line of
Diodes Incorporated
PI3EQX1004B1
Application Schematics
ESD protector request
VDD
VDD
VDD
VDD
insertion loss less than 1dB
at 5GHz for TVS device
R1
R2
R3
R4
1
1kohm
1kohm
1kohm
1kohm
EN_AB
D0
EQA
FGA
EQB
FGB
TVS device
R7
R25
R26
R27
R28
VDD
ESD
protector
1kohm
1kohm or 68kohm
1kohm or 68kohm
1kohm or 68kohm
1kohm or 68kohm
VDD=3.3V
2
+
EC1
22uF
C1
0.1uF
C2
0.1uF
C20
0.1uF
C19
0.1uF
C24
0.1uF
C23
0.1uF
C22
0.1uF
C21
0.1uF
1
NOTE:
D1
After PCB layout, Flat Gain and Equalizer should be fine tune
TVS device
2
USB3.x Device
HOST
VDD
USB3.x Connector
U2
C4
C6
0.1u_0402
0.1u_0402
ESD
protector
USB3.x controller
A
type
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
FGA
FGA
NC
NC
VDD3P3
TXAP
EN_AB
USB3.x RX+
EN_AB
VDD3P3
RXAP
C9/R9
C10/R10
0.22u/0ohm_0402
0.22u/0ohm_0402
Type
A
Connector use
ESD
protector
USB3.x RX-
C3
C5
0.1u_0402
0.1u_0402
USB3.X
PHY
SSTX1+
SSTX1-
side pin define
Host
RXAN
TXAN
R22
R21
TEST1#(VDD3P3)
VDD3P3
TXBP
TXBN
FGC
EQC
RXCN
RXCP
NC(VDD3P3)
VDD3P3
RXBP
C7
C8
0.1u_0402
0.1u_0402
200k
200k
USB3.x TX+
USB3.x TX-
SSRX1+
SSRX1-
RXBN
EQB
FGB
TXCN
FGC
EQC
EQB
FGB
SSTX2-
SSTX2+
C18
C17
0.1u_0402
0.1u_0402
C13
C14
0.1u_0402
0.1u_0402
ESD
protector
TXCP
VDD3P3
TEST2#(VDD3P3)
RXDN
VDD3P3
NC(VDD3P3)
TXDN
SSRX2-
SSRX2+
C15
C16
0.1u_0402
0.1u_0402
C11/R11
C12/R12
0.22u/0ohm_0402
0.22u/0ohm_0402
ESD
protector
TXDP
RXDP
R24
R23
D+ FS/HS/LS
D- FS/HS/LS
USB2.0
PHY
USB2.0
PHY
FS/HS/LS D+
FS/HS/LS D-
PI3EQX1004B1ZHE@TQFN42
200k
200k
Could device side MUX tolerance 3.3V DC level?
Yes: R21, R22, R23 and R24 are removed. R9, R10, R11 and R12
=
0Ohm.
No: R21, R22, R23 and R24 are 200kohm. C9, C10, C11 and C12
=
0.22uF.
VDD
VDD
VDD
VDD
R5
1kohm
R6
R16
R18
EN_CD
1kohm
1kohm
1kohm
FGD
EQC
FGC
EQD
R8
R13
1kohm or 68kohm
R14
R15
R17
1kohm
1kohm or 68kohm
1kohm or 68kohm
1kohm or 68kohm
Part Marking
ZH Package
PI3EQX
1004B1ZHE
YYWWXX
YY: Year
WW: Workweek
1st X: Assembly Code
2nd X: Fab Code
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September 2017
Diodes Incorporated
PI3EQX1004B1
Document Number DS40596 Rev 2-2
9
A product Line of
Diodes Incorporated
PI3EQX1004B1
Packaging Mechanical: 42-TQFN (ZH)
17-0266
For latest package info.
please check: http://www.diodes.com/design/support/packaging/pericom-packaging/packaging-mechanicals-and-thermal-characteristics/
Ordering Information
Ordering Number
Package Code Package Description
PI3EQX1004B1ZHEX
Notes:
ZH
42-contact, Very in Quad Flat No-Lead (TQFN)
1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- andAntimony-free, “Green” and Lead-free.
Thermal characteristics can be found on the company web site at www.diodes.com/design/support/packaging/
3. E = Pb-free and Green
4. X suffix = Tape/Reel
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September 2017
Diodes Incorporated
PI3EQX1004B1
Document Number DS40596 Rev 2-2
10
A product Line of
Diodes Incorporated
PI3EQX1004B1
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT
LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER
THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further no-
tice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or
any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer
or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all
the companies whose products are represented on Diodes Incorporated website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes
Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal
injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein
may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determi-
native format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval
of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably
expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge
and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated
products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by
Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes
Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2016, Diodes Incorporated
www.diodes.com
www.diodes.com
September 2017
Diodes Incorporated
PI3EQX1004B1
Document Number DS40596 Rev 2-2
11
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