PAM8302LAYCR [DIODES]
Audio Amplifier, PDSO8,;
| 型号： | PAM8302LAYCR |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Audio Amplifier, PDSO8, 放大器 光电二极管 商用集成电路 |
| 文件： | 总12页 (文件大小：422K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
A Product Line of
Diodes Incorporated
PAM8302L
2.5W FILTERLESS CLASS-D MONO AUDIO AMPLIFIER
Description
Pin Assignments
The PAM8302L is a 2.5W Class-D mono audio amplifier. Its low
THD+N offers high-quality sound reproduction.
The PAM8302L uses a filterless design that avoids the use of low-
pass filters. This new design allows the amplifier to directly drive a
speaker, making it cheap and compact. The new design allows the
amplifier to be more affordable and take less PCB area.
The PAM8302L uses less power than the Class-AB amplifiers. The
use of this product can help optimize battery life; it is ideal for portable
applications.
The PAM8302L is available in MSOP-8 and DFN3x3-8 packages.
Features
•
•
•
•
•
•
•
•
•
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Support 2.0V to 5.5V Supply Voltage Range
2.5W Output at 10% THD with a 4Ω Load and 5V Power Supply
Filterless, Low Quiescent Current and Low EMI
High Efficiency up to 88%
Superior Low Noise
Short Circuit Protection
Thermal Shutdown
Applications
Few External Components to Save Space and Cost
MSOP-8 and DFN3x3 Packages Available
Pb-Free Packages
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•
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PMP/MP4
GPS
Portable Speakers
Walkie Talkie
Handsfree phones/Speaker Phones
Cellular Phones
Typical Applications Circuit
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November 2012
© Diodes Incorporated
PAM8302L
Document number: DSxxxxx Rev. 1 - 0
A Product Line of
Diodes Incorporated
PAM8302L
Pin Descriptions
Pin Number
Pin Name
Function
Shutdown Terminal (active low)
No Connection
1
2
3
4
5
6
7
8
SD
NC
IN+
Positive Differential Input
Negative Differential Input
Positive BTL Output
Analog Power Supply
Ground
IN-
VO+
VDD
GND
VO-
Negative BTL Output
Functional Block Diagram
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
These are stress ratings only and functional operation is not implied. Exposure to absolute maximum ratings for prolonged time periods may
affect device reliability. All voltages are with respect to ground.
Parameter
Supply Voltage at No Input Signal
Input Voltage
Rating
6.0
Unit
V
-0.3 to VDD +0.3
150
Maximum Junction Temperature
Storage Temperature
-65 to +150
300, 5sec
°C
Soldering Temperature
Recommended Operating Conditions (@TA = +25°C, unless otherwise specified.)
Parameter
Rating
2.0 to 5.5
-40 to +85
-40 to +125
Unit
V
Suppy Voltage Range
Operation Temperature Range
Junction Temperature Range
°C
°C
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November 2012
© Diodes Incorporated
PAM8302L
Document number: DSxxxxx Rev. 1 - 0
A Product Line of
Diodes Incorporated
PAM8302L
Thermal Information
Parameter
Package
MSOP-8
DFN3x3-8
MSOP-8
DFN3x3-8
MSOP-8
DFN3x3-8
Symbol
Max
75
Unit
Thermal Resistance (Junction to Case)
°C/W
θJC
20
180
50
Thermal Resistance (Junction to Ambient)
Internal Power Dissipation @ TA = +25°C
°C/W
mW
θJA
550
2000
PD
Electrical Characteristics (@TA = +25°C, VIN = 3.6V, VO = 1.8V, CIN = 10µF, COUT = 10µF, L = 4.7µH, unless otherwise specified.)
Parameter
Supply Voltage Range
Quiescent Current
Symbol
VDD
Test Conditions
Min
Typ
Max
5.5
8
Units
V
2.5
No Load
4
mA
µA
IQ
Shutdown Current
1
ISHDN
VSHDN = 0V
2.25
1.10
1.80
0.86
1.35
0.72
1.15
0.6
2.50
1.25
2.00
0.95
1.50
0.80
1.30
0.65
85
VDD = 5V
f = 1kHz, RL = 4ꢀ,
THD+N = 10%
VDD = 3.6V
VDD = 5V
f = 1kHz, RL = 4ꢀ,
THD+N = 1%
VDD = 3.6V
VDD = 5V
Output Power
W
PO
f = 1kHz, RL = 8ꢀ,
THD+N = 10%
VDD = 3.6V
V
DD = 5V
f = 1kHz, RL = 8ꢀ,
THD+N = 1%
VDD = 3.6V
Peak Efficiency
η
f = 1kHz
88
%
%
0.30
0.45
0.35
0.50
0.40
0.45
25.5
RL = 8ꢀ, PO = 0.1W, f = 1kHz
RL = 8ꢀ, PO = 0.5W, f = 1kHz
RL = 4ꢀ, PO = 0.1W, f = 1kHz
RL = 4ꢀ, PO = 0.5W, f = 1kHz
Total Harmonic Distortion Plus Noise
THD+N
0.35
0.40
24.0
50
Gain
22.5
45
dB
dB
dB
dB
GV
Power Supply Ripple Rejection
Dynamic Range
PSRR
DYN
SNR
No Inputs, f = 1kHz, VPP = 200mV
f = 20 to 20kHz
85
90
Signal to Noise Ratio
f = 20 to 20kHz
75
80
No A-Weighting
180
120
250
0.45
0.20
300
200
300
0.50
0.25
Noise
µV
kHz
ꢀ
VN
A-Weighting
Oscillator Frequency
Drain-Source On-State Resistance
SHDN Input High
200
fOSC
P MOSFET
N MOSFET
RDS(ON)
IDS = 100mA
1.2
VSH
VSL
V
SHDN Input Low
0.4
Over Temperature Protection
Over Temperature Hysterisis
OTP
OTH
Junction Temperautre
120
135
30
°C
°C
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November 2012
© Diodes Incorporated
PAM8302L
Document number: DSxxxxx Rev. 1 - 0
A Product Line of
Diodes Incorporated
PAM8302L
Typical Performance Characteristics (@TA = +25°C, unless otherwise specified.)
4 of 12
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November 2012
© Diodes Incorporated
PAM8302L
Document number: DSxxxxx Rev. 1 - 0
A Product Line of
Diodes Incorporated
PAM8302L
Typical Performance Characteristics (cont.) (@TA = +25°C, unless otherwise specified.)
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© Diodes Incorporated
PAM8302L
Document number: DSxxxxx Rev. 1 - 0
A Product Line of
Diodes Incorporated
PAM8302L
Typical Performance Characteristics (cont.) (@TA = +25°C, unless otherwise specified.)
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© Diodes Incorporated
PAM8302L
Document number: DSxxxxx Rev. 1 - 0
A Product Line of
Diodes Incorporated
PAM8302L
Application Information
Test Setup for Performance Testing
Notes:
1. The Audio Precision (AP) AUX-0025 low pass filter is necessary for every Class-D amplifier measurement with AP analyzer.
2. Two 22μH inductors are used in series with load resistor to emulate the small speaker for efficiency measurement.
Maximum Gain
As shown in block diagram (Page 2), the PAM8302L has two internal amplifier stages. The first stage's gain is externally con figurable, while the
second stage's is internally fixed. The closedloop gain of the first stage is set by selecting the ratio of RF to RI while the second stage's gain is
fixed at 2x.The output of amplifier one serves as the input to amplifier two, thus the two amplifiers produce signals identical in magnitude, but
different in phase by 180°. Consequently, the differential gain for the IC is
A =20*log [2*(RF/RI)]
The PAM8302L sets maximum R =80kꢀ, minimum RI =10kꢀ, so the maximum closed-gain is 24dB.
Input Capacitor (CI)
Intypical application, an input capacitor, CI is required to allow the amplifier to bias input signals to a proper DC level for optimum operation. In
this case, CI and the minimum input impedance RI (10k internal) form a high pass filter with a corner frequeny determind by the following
equation:
1
=
fC
2ΠR
I CI
It is important to choose the value of CI as it directly affects low frequency performance of the circuit, for example, when an application requires a
flat bass response as loas as 100Hz,. Equation is reconfigured as follows:
1
=
CI
2ΠR
I fI
As the input reisitance is varible, for the CI value of 0.16µF, one should actually choose the CI within the range of 0.1µF to 0.22µF. A further
consideration for this capacitor is the leakage path from the input source through the input network (RI, RF, CI) to the load. This leakage current
creates a DC offset voltage at the input to the amplifier that reduces useful headroom, especially in high gain application. For this reason, a low
leakage tantalum or ceramic capacitor is the best choice. When a polarized capacitior is used, the positive side of the capacitor should face the
amplifier input in most applications as the DC level is held at VDD/2, which is likely higher than the source DC level. Please note that it is
important to confirm the capacitor polarity in the application.
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© Diodes Incorporated
PAM8302L
Document number: DSxxxxx Rev. 1 - 0
A Product Line of
Diodes Incorporated
PAM8302L
Application Information (cont.)
Power Supply Decoupling (CS)
The PAM8302L is a high-performance CMOS audio amplifier that requires adequate power supply decoupling to ensure the output THD and
PSRR as low as possible. Power supply decoupling affects low frequency response. Optimum decoupling is achieved by using two capacitors of
different types that target different types of noise on the power supply leads. For higher frequency transients, spikes, or digital hash on the line, a
good low equivalent-series-resistance (ESR) ceramic capacitor, typicall 1.0µF is good, placing it as close as possilbe to the device VDD terminal.
For filtering lower frequency noise signals, capacitor of 10µF or larger, closely located to near the audio power amplifier is recommended.
Shutdown Operation
In order to reduce shutdown power consumption, the PAM8302L contains shutdown circuitry for turn to turn off the amplifier. This shutdown
feature turns the amplifier off when a logic low is apllied on the SD pin. By switching the shutdown pin over to GND, the PAM8302L supply
current draw will be minimized inidle mode.
For the best power on/off pop performance, the amplifier should be set in the shutdown mode prior to power on/off operation.
Under Voltage Lock-Out (UVLO)
The PAM8302L incorporates circuitry to detect low on or off voltage. When the supply voltage drops to 2.1V or below, the PAM8302L goes into a
state of shutdown, and the device comes out of its shutdown state to normal operation by reset the power supply or SD pin.
How to Reduce EMI (Electro Magnetic Interference)
A simple solution is to put an additional capacitor 1000μF at power supply terminal for power line coupling if the traces from amplifier to speakers
are short (< 20CM). Most applications require a ferrite bead filter as shown at Figure 1. The ferrite filter depresses EMI of around 1MHz and
higher. When selecting a ferrite bead, choose one with high impedance at high frequencies and low impedance at low frequencies.
Figure 1. Ferrite Bead Filter to Reduce EMI
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November 2012
© Diodes Incorporated
PAM8302L
Document number: DSxxxxx Rev. 1 - 0
A Product Line of
Diodes Incorporated
PAM8302L
Ordering Information
Part Number
PAM8302LASCR
PAM8302LAYCR
Package Type
MSOP-8
Standard Package
2500 Units/Tape&Reel
3000 Units/Tape&Reel
DFN3x3-8
Marking Information
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November 2012
© Diodes Incorporated
PAM8302L
Document number: DSxxxxx Rev. 1 - 0
A Product Line of
Diodes Incorporated
PAM8302L
Package Outline Dimensions (All dimensions in mm.)
MSOP-8
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© Diodes Incorporated
PAM8302L
Document number: DSxxxxx Rev. 1 - 0
A Product Line of
Diodes Incorporated
PAM8302L
Package Outline Dimensions (cont.) (All dimensions in mm.)
DFN3x3-8
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November 2012
© Diodes Incorporated
PAM8302L
Document number: DSxxxxx Rev. 1 - 0
A Product Line of
Diodes Incorporated
PAM8302L
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final and determinative format released by Diodes Incorporated.
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Copyright © 2012, Diodes Incorporated
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© Diodes Incorporated
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Document number: DSxxxxx Rev. 1 - 0
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