PAM8303C [DIODES]
ULTRA LOW EMI, 3W FILTERLESS MONO CLASS-D AUDIO POWER AMPLIFIER;
| 型号： | PAM8303C |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | ULTRA LOW EMI, 3W FILTERLESS MONO CLASS-D AUDIO POWER AMPLIFIER 放大器 LTE 功率放大器 |
| 文件： | 总16页 (文件大小：791K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PAM8303C
ULTRA LOW EMI, 3W FILTERLESS
MONO CLASS-D AUDIO POWER AMPLIFIER
Description
Pin Assignments
DFN3030 (B)
Top View
The PAM8303C is a 3W mono, filterless Class-D amplifier with high
PSRR and differential input that eliminate noise and RF rectification.
Features like 90% efficiency and small PCB area make the
PAM8303C Class-D amplifier ideal for cellular handsets. The filterless
architecture requires no external output filter, fewer external
components, less PCB area, and lower system costs. The filterless
architecture also simplifies application design. The PAM8303C
features short-circuit protection and thermal shutdown. The
PAM8303C is available in MSOP-8 and DFN 3030 8-pin packages.
DFN3030 (C)
Top View
Features
Ultra-Low EMI, -20dB Better than FCC Class-B @ 300MHz
High Efficiency up to 90% @1W with an 8Ω Speaker
Shutdown Current <1µA
MSOP-8(B)
Top View
3W@10% THD Output with a 4Ω Load at 5V Supply
Demanding Few External Components
Superior Low Noise Without Input
Supply Voltage from 2.8V to 5.5V
Short-Circuit Protection
Thermal Shutdown
MSOP-8 and DFN 3030 8-pin Packages Totally Lead-
Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free “Green” Device (Note 3)
Applications
9 Ball WCSP (A) (EOL)
Top View
Cellular Phones/Smart Phones
MP4/MP3
GPS
Digital Photo Frame
Electronic Dictionary
Portable Game Machines
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3).compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-
free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total
Br + Cl) and <1000ppm antimony compounds.
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PAM8303C
Document number: DS36438 Rev.2 - 2
PAM8303C
Typical Applications Circuit
Pin Descriptions
Pin Name
Pin
Name
Function
WCSP(A)(EOL) DFN3030-8 (B)
DFN3030-8 (C)
MSOP-8 (B)
OUT+
PVDD
VDD
IN-
C3
B2
1
2
5
—
6
1
2
Positive BTL Output
Power Supply
B1
3
3
Analog Power Supply
C1
4
4
4
Negative Differential Input
Positive Differential Input
Shutdown Terminal (Active Low)
Ground
IN+
A1
5
3
5
SD
C2
6
1
6
GND
OUT-
NC
A2, B3
A3
7
7
7
8
8
8
Negative BTL Output
—
—
—
2
—
Functional Block Diagram
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PAM8303C
Document number: DS36438 Rev.2 - 2
PAM8303C
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
The following parameters are stress ratings only, and functional operation is not implied. Exposure to absolute maximum ratings for prolonged
time periods can affect device reliability. All voltages are with respect to ground.
Parameter
Supply Voltage
Rating
6.0
Unit
V
Input Voltage
-0.3 to VDD +0.3
150
Maximum Junction Temperature
Storage Temperature
Soldering Temperature
-65 to +150
+250, 10 sec
°C
Recommended Operating Conditions (@TA = +25°C, unless otherwise specified.)
Parameter
Rating
2.8 to 5.5
-40 to +85
-40 to +125
Unit
V
Supply Voltage Range
Ambient Temperature Range
Junction Temperature Range
°C
°C
Thermal Information (Note 4)
Parameter
Package
MSOP-8
Symbol
ϴJA
Max
180
47.9
75
Unit
Thermal Resistance (Junction to Ambient)
Thermal Resistance (Junction to Case)
DFN3030-8
MSOP-8
°C/W
ϴJC
Note:
4. For the 9-pin CSP package, the thermal resistance is highly dependent on the PCB heat sink area. For example, the ϴja can equal to 195°C/W with
50mm2 total area or 135°C/W with 500mm2 area. When using ground and power planes, the value is approximately 90°C/W.
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PAM8303C
Document number: DS36438 Rev.2 - 2
PAM8303C
Electrical Characteristics (@TA = +25°C, VDD = 5V, Gain = 2V/V, RL = L(33µH) + R + L(33µH), unless otherwise specified.)
Symbol
Parameter
Supply Voltage
Test Conditions
THD+N = 10%, f = 1kHz, R = 4Ω
THD+N = 1%, f = 1kHz, R = 4Ω
THD+N = 10%, f = 1kHz, R = 8Ω
THD+N = 1%, f = 1kHz, R = 8Ω
Min
2.8
Typ
Max
5.5
—
Units
V
VDD
2.85
1.65
1.20
2.50
1.15
0.85
1.65
0.75
0.55
1.3
3.00
1.80
1.35
2.66
1.30
1.0
VDD = 5.0V
VDD = 3.6V
VDD = 3.2V
VDD = 5.0V
VDD = 3.6V
VDD = 3.2V
VDD = 5.0V
VDD = 3.6V
VDD = 3.2V
VDD = 5.0V
VDD = 3.6V
VDD = 3.2V
—
W
W
W
W
%
%
—
—
—
—
Output Power
PO
1.8
—
0.9
—
0.7
—
1.5
—
0.55
0.72
—
0.40
—
—
—
—
—
—
—
—
—
85
—
—
40
85
80
—
—
—
—
—
—
—
—
—
0.55
0.28
0.40
0.55
0.20
0.35
0.5
-63
-62
-52
95
—
0.35
0.45
0.60
0.25
0.40
0.55
-55
-55
-40
—
VDD = 5.0V, PO = 1W, R = 8Ω
VDD = 3.6V, PO = 0.1W, R = 8Ω
VDD = 3.2V, PO = 0.1W, R = 8Ω
VDD = 5.0V, PO = 0.5W, R = 4Ω
VDD = 3.6V, PO = 0.2W, R = 4Ω
VDD = 3.2V, PO = 0.1W, R = 4Ω
f = 1kHz
f = 1kHz
Total Harmonic Distortion Plus
Noise
THD+N
PSRR
f = 217Hz
f = 1kHz
VDD = 3.6V, Inputs AC-Grounded
with CIN = 1µF
Power Supply Ripple Rejection
dB
f = 10kHz
Dyn
VN
Dynamic Range
f = 1kHz
VDD = 5V, THD = 1%, R = 8Ω
No A-Weighting
A-Weighting
50
100
60
Output Noise
Inputs AC-Grounded
µV
dB
%
30
CMRR
Common-Mode Rejection Ratio
Peak Efficiency
63
—
VIC = 100m, VPP, f =1kHz
RL = 8Ω, THD = 10%
RL = 4Ω, THD = 10%
VDD = 5.0V
90
—
η
f = 1kHz
86
—
7.5
4.6
3.6
0.5
280
300
325
365
385
10
Quiescent Current
Shutdown Current
R = 8Ω
7
mA
IQ
VDD = 3.6V
5
VDD = 3.0V
2
µA
—
ISD
VDD = 3.0V to 5.0V
VSD = 0.3V
VDD = 5.0V
VDD = 3.6V
VDD = 3.0V
VDD = 5.0V
VDD = 3.6V
VDD = 3.0V
350
375
400
420
450
CSP Package, High Side PMOS
plus Low Side NMOS,
I = 500mA
—
—
Static Drain-to-Source
On-State Resistor
RDS(ON)
—
MSOP/DFN package,
High-Side PMOS plus
Low-Side NMOS, I = 500mA
—
—
—
410
150
250
500
—
—
—
Input Resistance
kΩ
kHz
RIN
fSW
Switching Frequency
200
300
VDD = 3V to 5V
VDD = 3V to 5V
300
kΩ/RI
Closed Loop Gain
—
—
dB
GV
Output Offset Voltage
—
1.5
—
10
—
—
50
—
mV
V
VOS
VIH
VIL
Input AC-Ground, VDD = 5V
VDD = 5V
Enable Input High Voltage
Enable Input Low Voltage
0.3
V
VDD = 5V
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PAM8303C
Document number: DS36438 Rev.2 - 2
PAM8303C
Typical Performance Characteristics (@TA = +25°C, VDD = 5V, f = 1kHz, Gain = 2V/V, unless otherwise specified.)
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PAM8303C
Document number: DS36438 Rev.2 - 2
PAM8303C
Typical Performance Characteristics (continued) (@TA = +25°C, VDD = 5V, f = 1kHz, Gain = 2V/V, unless otherwise
specified.)
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PAM8303C
Document number: DS36438 Rev.2 - 2
PAM8303C
Typical Performance Characteristics (cont.) (@TA = +25°C, VDD = 5V, f = 1kHz, Gain = 2V/V, unless otherwise specified.)
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PAM8303C
Document number: DS36438 Rev.2 - 2
PAM8303C
Typical Performance Characteristics (cont.) (@TA = +25°C, VDD = 5V, f = 1kHz, Gain = 2V/V, unless otherwise specified.)
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PAM8303C
Document number: DS36438 Rev.2 - 2
PAM8303C
Typical Performance Characteristics (cont.) (@TA = +25°C, VDD = 5V, f = 1kHz, Gain = 2V/V, unless otherwise specified.)
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PAM8303C
Document number: DS36438 Rev.2 - 2
PAM8303C
Application Information
Test Setup for Performance Testing (Notes 5 & 6)
Notes:
5. The AP AUX-0025 low-pass filter is necessary for Class-D amplifier measurement with AP analyzer.
6. Two 22μH inductors are used in series with load resistor to emulate the small speaker for efficiency measurement.
Input Resistance (RI)
The input resistors (RI) set the gain of the amplifier according to the following equation.
2x150k V
Gain
RI
V
Resistor matching is very important in fully differential amplifiers. The balance of the output on the reference voltage depends on matched ratios
of the resistors. CMRR, PSRR, and cancellation of the second harmonic distortion diminish if resistor mismatch occurs. Therefore, it is
recommended to use 1% tolerance resistors or better to keep the performance optimized. Matching is more important than overall tolerance.
Resistor arrays with 1% matching can be used with a tolerance greater than 1%.
Place the input resistors very close to the PAM8303C to limit noise injection on the high-impedance nodes.
For optimal performance the gain must be set to 2 × (RI = 150k) or lower. Lower gain allows the PAM8303C to operate at its best and keeps a
high voltage at the input, which makes the inputs less susceptible to noise. In addition to these features, higher value of RI minimizes pop noise.
Input Capacitors (CI)
In the typical application, an input capacitor, CI, is required to allow the amplifier to bias the input signal to the proper DC level for optimum
operation. In this case, CI and the minimum input impedance, RI, form is a high-pass filter with the corner frequency determined in the following
equation.
1
fC
2R
I CI
It is important to consider how the value of CI as the capacitor directly affects the low-frequency performance of the circuit. For example, when RI
is 150kΩ, and the specification calls for a flat bass, response is down to 150Hz. The equation is reconfigured as follows.
1
I
C
2R
I FCI
When input-resistance variation is considered, the CI is 7nF, so one would choose a value of 10nF. A further consideration for this capacitor is
the leakage path from the input source through the input network (CI, RI + RF) to the load. This leakage current creates a DC offset voltage at the
input to the amplifier that reduces useful headroom, especially in high-gain applications.
For this reason, a low-leakage tantalum or ceramic capacitor is the best choice. When polarized capacitors are used, the positive side of the
capacitor should face the amplifier input in most applications as the DC level is held at VDD/2, which is likely higher than the source DC level.
Note that it is important to confirm the capacitor polarity in the application.
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PAM8303C
Document number: DS36438 Rev.2 - 2
PAM8303C
Application Information (cont.)
Decoupling Capacitor (CS)
The PAM8303C is a high-performance CMOS audio amplifier that requires adequate power-supply decoupling to ensure the output total
harmonic distortion (THD) as low as possible. Power-supply decoupling also prevents the oscillations caused by long lead length between the
amplifier and the speaker.
The optimum decoupling is achieved by using two different types of capacitors that target on different types of noise on the power supply leads.
For higher-frequency transients, spikes, or digital hash on the line, a good low equivalent series resistance (ESR) ceramic capacitor, typically
1µF, is placed as close as possible to the device near each VDD and PVDD pin for the best operation. For filtering lower-frequency noise signals,
a large ceramic capacitor of 10µF or greater placed near the audio power amplifier is recommended.
How to Reduce EMI
Most applications require a ferrite bead filter for EMI elimination as shown in Figure 1. The ferrite filter reduces EMI around 1MHz and higher.
When selecting a ferrite bead, choose one with high impedance at high frequencies but with low impedance at low frequencies.
Figure 1: Ferrite Bead Filter to Reduce EMI
In order to reduce power consumption while not in use, the PAM8303C contains shutdown circuitry that is used to turn off the amplifier’s bias
circuitry. This shutdown feature turns the amplifier off when logic low is placed on the SD pin. By switching the shutdown pin connected to GND,
the PAM8303C supply current draw is minimized in idle mode.
Shutdown Operation
In order to reduce power consumption while not in use, the PAM8303C contains shutdown circuitry that is used to turn off the amplifier’s bias
circuitry. This shutdown feature turns the amplifier off when logic low is placed on the pin. By switching the shutdown pin connected to GND, the
PAM8303C supply-current draw will be minimized in idle mode.
Undervoltage Lockout (UVLO)
The PAM8303C incorporates circuitry designed to detect low supply voltage. When the supply voltage drops to 2.3V or below, the PAM8303C
goes into a state of shutdown, and the device comes out of its shutdown state and restores to normal function only when reset the power supply
or SD pin.
Thermal protection on the PAM8303C prevents the device from damage when the internal die temperature exceeds +135°C. There is a 15°C
tolerance on this trip point from device to device. Once the die temperature exceeds the set point, the device enters the shutdown state, and the
outputs are disabled. This is not a latched fault. The thermal fault is cleared once the temperature of the die decreases by 30°C. This large
hysteresis prevents motor-boating sound, and the device begins normal operation at this point with no external system interaction.
Pop and Click Circuitry
The PAM8303C contains circuitry to minimize turn-on and turn-off transients, or click and pops, where turn-on refers to either power supply turn
on or device recovery from shutdown mode. When the device is turned on, the amplifiers are internally muted. An internal current source ramps
up the internal reference voltage. The device remains in mute mode until the reference voltage reaches half-supply voltage, 1/2 VDD. As soon as
the reference voltage is stable, the device begins full operation. For the best power-off pop performance, the amplifier should be set in shutdown
mode prior to removing the power-supply voltage.
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PAM8303C
Document number: DS36438 Rev.2 - 2
PAM8303C
Application Information (cont.)
PCB Layout Guidelines
Grounding
It is recommended to use plain grounding or separate grounds. Do not use one-line connecting-power GND and analog GND. Noise currents in
the output power stage must be returned to output noise ground and nowhere else. When these currents circulate elsewhere, the currents can
get into the power supply, the signal ground, and so on, or even worse, the currents can form a loop and radiate noise. Any of these instances
results in degraded-amplifier performance. The output-noise ground that the logical returns for the output noise currents associated with Class-D
switching must tie to system ground at the power exclusively. Signal currents for the inputs’ reference must be returned to quiet ground. This
ground only ties to the signal components and the GND pin. GND then ties to system ground.
Power Supply Line
Similar to the ground, VDD and PVDD must be separately connected to the system power supply. It is recommended that all of the trace be routed
as short and thick as possible. For the power-line layout, a water stream, or any barricade, placed in the trace can result in the bad performance
of the amplifier (as shown in Figure 2).
Figure 2. Power Line
Components Placement
Decoupling capacitors—as previously described, the high-frequency, 1µF decoupling capacitors should be placed as close to the power supply
terminals (VDD and PVDD) as possible. Large bulk power supply decoupling capacitors (10µF or greater) must be placed near the PAM8303C on
the PVDD terminal.
Input resistors and capacitors must be placed very close to input pins.
Output filter—the ferrite EMI filter must be placed as close to the output terminals as possible for the best EMI performance, and the capacitors
used in the filters must be grounded to system ground.
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PAM8303C
Document number: DS36438 Rev.2 - 2
PAM8303C
Ordering Information
PAM8303C X X X
Pin Configuration
Number of Pins
Package Type
Z: WCSP
Y: DFN3030-8
A
B
C: 8
N: 9
C
S: MSOP-8
(Refer to P2, 3
Pin Configuration
Package
(Note 8)
Status
(Note 7)
Part Number
PAM8303CBYC
PAM8303CBSC
Part Marking
Tape and Reel Quantity
P8303C
XXXYW
DFN3030-8
MSOP-8
3000
2500
In production
In production
P8303C
XXXYW
Notes:
7. PAM8303CAZN (in package WCSP) is End of Life without any alternatives. PAM8303CCYC is End of Life, and the recommended alternative is
PAM8303CBYC.
8. For packaging details, see https://www.diodes.com/design/support/packaging/diodes-packaging/diodes-package-outlines-and-pad-layouts/
Marking Information
9 Ball WCSP (A) (EOL)
Top View
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PAM8303C
Document number: DS36438 Rev.2 - 2
PAM8303C
Marking Information (continued)
Package Outline Dimensions (All dimensions in mm)
MSOP-8
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PAM8303C
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PAM8303C
Package Outline Dimensions (All dimensions in mm) (continued)
DFN3030-8
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Document number: DS36438 Rev.2 - 2
PAM8303C
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
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all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2018, Diodes Incorporated
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