MMST4126-7 [DIODES]
Small Signal Bipolar Transistor, 0.2A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, ULTRA SMALL, PLASTIC PACKAGE-3;
| 型号： | MMST4126-7 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Small Signal Bipolar Transistor, 0.2A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, ULTRA SMALL, PLASTIC PACKAGE-3 晶体 小信号双极晶体管 开关 光电二极管 |
| 文件： | 总3页 (文件大小：119K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMST4126
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
•
•
•
•
•
•
Epitaxial Planar Die Construction
A
SOT-323
Complementary NPN Type Available (MMST4124)
Ideal for Medium Power Amplification and Switching
Ultra-Small Surface Mount Package
Lead Free/RoHS Compliant (Note 2)
"Green" Device (Notes 3 and 4)
Dim
A
B
C
D
E
Min
0.25
1.15
2.00
Max
0.40
1.35
2.20
C
C
B
B
E
0.65 Nominal
G
H
Mechanical Data
0.30
1.20
1.80
0.0
0.40
1.40
2.20
0.10
1.00
0.40
0.18
8°
•
•
Case: SOT-323
G
H
J
Case Material: Molded Plastic, "Green" Molding
Compound, Note 4. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe).
K
J
M
•
•
•
•
K
L
0.90
0.25
0.10
0°
L
D
F
C
M
α
•
•
•
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.006 grams (approximate)
All Dimensions in mm
E
B
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
Symbol
VCBO
VCEO
VEBO
IC
Value
-25
-25
-4.0
-200
Unit
V
V
V
mA
mW
200
Pd
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
625
°C/W
°C
Rθ
Tj, TSTG
JA
-55 to +150
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Symbol
Min
Max
Unit
Test Condition
-25
-25
-4.0
⎯
V
V
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
⎯
⎯
⎯
IC = -10μA, IE = 0
IC = -1.0mA, IB = 0
IE = -10μA, IC = 0
VCB = -20V, IE = 0V
VEB = -3.0V, IC = 0V
V
-50
nA
nA
Emitter Cutoff Current
-50
IEBO
⎯
ON CHARACTERISTICS (Note 5)
360
⎯
-0.40
-0.95
120
60
IC = -2.0mA, VCE = -1.0V
IC = -50mA, VCE = -1.0V
IC = -50mA, IB = -5.0mA
IC = -50mA, IB = -5.0mA
DC Current Gain
hFE
⎯
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
V
V
VCE(SAT)
VBE(SAT)
⎯
⎯
4.5
10
pF
pF
Cobo
Cibo
hfe
⎯
⎯
120
VCB = -5.0V, f = 1.0MHz, IE = 0
VEB = -0.5V, f = 1.0MHz, IC = 0
VCE = 1.0V, IC = -2.0mA, f = 1.0kHz
VCE = -20V, IC = -10mA, f = 100MHz
VCE = -5.0V, IC = -100μA,
Input Capacitance
Small Signal Current Gain
480
⎯
⎯
MHz
Current Gain-Bandwidth Product
250
fT
Noise Figure
NF
4.0
dB
⎯
RS = 1.0kΩ, f = 1.0kHz
Note:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
5. Short duration pulse test used to minimize self-heating effect.
MMST4126
© Diodes Incorporated
DS30161 Rev. 7 - 2
1 of 3
www.diodes.com
400
350
300
250
100
Note 1
f = 1MHz
200
150
100
50
10
C
ibo
1
0.1
0
200
0
175
25
50
150
75 100 125
1
100
10
TA, AMBIENT TEMPERATURE (°C)
VCB, COLLECTOR-BASE VOLTAGE (V)
Fig. 2, Input and Output Capacitance vs.
Collector-Base Voltage
Fig. 1, Max Power Dissipation vs.
Ambient Temperature
1,000
10
= 10
1
100
0.1
0.01
10
1
10
IC, COLLECTOR CURRENT (mA)
1
100
1
1,000
1,000
10
0.1
100
IC, COLLECTOR CURRENT (mA)
Fig. 4, Typical Collector-Emitter Saturation Voltage
vs. Collector Current
Fig. 3, Typical DC Current Gain vs.
Collector Current
1.0
0.9
0.8
0.7
0.6
0.5
I
I
C
B
= 10
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 5, Typical Base-Emitter
Saturation Voltage vs. Collector Current
MMST4126
© Diodes Incorporated
DS30161 Rev. 7 - 2
2 of 3
www.diodes.com
Ordering Information (Notes 4 and 6)
Packaging
Shipping
Device
SOT-323
3000/Tape & Reel
MMST4126-7-F
Notes:
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K2B = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
K2B
Date Code Key
Year
1998
1999
2000
2001
2002
2003
2004 2005
2006
2007
2008
2009
2010
2011
2012
Code
J
K
L
M
N
P
R
S
T
U
V
W
X
Y
Z
Month
Code
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
1
2
3
4
5
6
7
8
9
O
N
D
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
MMST4126
© Diodes Incorporated
DS30161 Rev. 7 - 2
3 of 3
www.diodes.com
相关型号：
MMST4126T246
Small Signal Bipolar Transistor, 0.2A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, MINIMOLD, SMT, SC-59, 3 PIN
ROHM
MMST4126T247
Small Signal Bipolar Transistor, 0.2A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, MINIMOLD, SMT, SC-59, 3 PIN
ROHM
©2020 ICPDF网 联系我们和版权申明