MMST4126-7-F [DIODES]
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR; PNP小信号表面贴装晶体管型号: | MMST4126-7-F |
厂家: | DIODES INCORPORATED |
描述: | PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
文件: | 总4页 (文件大小:74K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SPICE MODEL: MMST4126
MMST4126
Lead-free Green
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
A
·
·
·
·
·
·
Epitaxial Planar Die Construction
SOT-323
C
Complementary NPN Type Available (MMST4124)
Ideal for Medium Power Amplification and Switching
Ultra-Small Surface Mount Package
Dim
A
Min
0.25
1.15
2.00
Max
0.40
1.35
2.20
C
B
B
B
E
Lead Free/RoHS Compliant (Note 2)
"Green" Device (Note 3 and 4)
G
H
C
D
0.65 Nominal
E
K
J
0.30
1.20
1.80
0.0
0.40
1.40
2.20
0.10
1.00
0.40
0.18
8°
Mechanical Data
M
G
H
·
·
Case: SOT-323
L
D
F
Case Material: Molded Plastic, "Green" Molding
Compound, Note 4. UL Flammability Classification
Rating 94V-0
J
K
0.90
0.25
0.10
0°
C
·
·
·
·
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
L
M
Terminals: Solderable per MIL-STD-202, Method 208
a
Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe).
E
B
All Dimensions in mm
·
·
·
Marking (See Page 2): K2B
Ordering & Date Code Information (See Page 2)
Weight: 0.006 grams (approximate)
@ TA = 25°C unless otherwise specified
Maximum Ratings
Characteristic
Symbol
VCBO
VCEO
VEBO
IC
MMST4126
-25
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
-25
V
Emitter-Base Voltage
-4.0
V
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
-200
mA
mW
°C/W
°C
Pd
200
RqJA
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
625
Tj, TSTG
-55 to +150
Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Product manufactured with Date Code 0609 (week 9, 2006) and newer are built with Green Molding Compound. Product
manufactured prior to Date Code 0609 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30161 Rev. 6 - 2
1 of 4
MMST4126
www.diodes.com
ã Diodes Incorporated
@ TA = 25°C unless otherwise specified
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Symbol
Min
Max
Unit
Test Condition
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IC = -10mA, IE = 0
-25
-25
-4.0
¾
¾
¾
V
V
IC = -1.0mA, IB = 0
IE = -10mA, IC = 0
VCB = -20V, IE = 0V
VEB = -3.0V, IC = 0V
¾
V
-50
-50
nA
nA
IEBO
Emitter Cutoff Current
¾
ON CHARACTERISTICS (Note 5)
IC = -2.0mA, VCE = -1.0V
120
60
360
¾
hFE
DC Current Gain
¾
I
C = -50mA, VCE = -1.0V
IC = -50mA, IB = -5.0mA
IC = -50mA, IB = -5.0mA
VCE(SAT)
VBE(SAT)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
¾
¾
-0.40
-0.95
V
V
VCB = -5.0V, f = 1.0MHz, IE = 0
VEB = -0.5V, f = 1.0MHz, IC = 0
Cobo
Cibo
¾
¾
4.5
10
pF
pF
Input Capacitance
VCE = 1.0V, IC = -2.0mA,
f = 1.0kHz
hfe
fT
Small Signal Current Gain
Current Gain-Bandwidth Product
Noise Figure
120
250
¾
480
¾
¾
MHz
dB
VCE = -20V, IC = -10mA,
f = 100MHz
V
CE = -5.0V, IC = -100mA,
NF
4.0
RS = 1.0kW, f = 1.0kHz
(Note 4 & 6)
Ordering Information
Device
Packaging
Shipping
MMST4126-7-F
SOT-323
3000/Tape & Reel
Notes: 4. Product manufactured with Date Code 0609 (week 9, 2006) and newer are built with Green Molding Compound. Product
manufactured prior to Date Code 0609 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
5. Short duration test pulse used to minimize self-heating effect.
6. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K2B = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
K2B
Date Code Key
Year
1998
1999
2000
2001
2002
2003
2004
2005
2006
2007
2008
2009
Code
J
K
L
M
N
P
R
S
T
U
V
W
Month
Code
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
1
2
3
4
5
6
7
8
9
O
N
D
DS30161 Rev. 6 - 2
2 of 4
MMST4126
www.diodes.com
100
f = 1MHz
350
300
250
200
150
10
Cibo
100
50
0
Cobo
1
200
1
0
175
25
50
150
0.1
100
75 100 125
10
VCB, COLLECTOR-BASE VOLTAGE (V)
TA, AMBIENT TEMPERATURE (°C)
Fig. 2, Input and Output Capacitance vs.
Collector-Base Voltage
Fig. 1, Max Power Dissipation vs
Ambient Temperature
1000
10
IC
IB
= 10
TA = 125°C
1
100
TA = +25°C
TA = -25°C
0.1
10
VCE = 1.0V
0.01
1
10
IC, COLLECTOR CURRENT (mA)
1
100
1000
1
1000
10
0.1
100
IC, COLLECTOR CURRENT (mA)
Fig. 3, Typical DC Current Gain vs
Collector Current
Fig. 4, Typical Collector-Emitter Saturation Voltage
vs. Collector Current
1.0
0.9
0.8
0.7
0.6
0.5
IC
IB
= 10
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 5, Typical Base-Emitter
Saturation Voltage vs. Collector Current
DS30161 Rev. 6 - 2
3 of 4
MMST4126
www.diodes.com
IMPORTANT NOTICE
Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhance-
ments, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein;
neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such
use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.
LIFE SUPPORT
The products located on our website at www.diodes.com are not recommended for use in life support systems where a failure or malfunction of the
component may directly threaten life or cause injury without the expressed written approval of Diodes Incorporated.
DS30161 Rev. 6 - 2
4 of 4
MMST4126
www.diodes.com
相关型号:
MMST4126T246
Small Signal Bipolar Transistor, 0.2A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, MINIMOLD, SMT, SC-59, 3 PIN
ROHM
MMST4126T247
Small Signal Bipolar Transistor, 0.2A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, MINIMOLD, SMT, SC-59, 3 PIN
ROHM
©2020 ICPDF网 联系我们和版权申明