MJD32C [DIODES]
PNP SURFACE MOUNT TRANSISTOR; PNP表面贴装晶体管
| 型号： | MJD32C |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | PNP SURFACE MOUNT TRANSISTOR |
| 文件： | 总6页 (文件大小：119K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MJD32C
PNP SURFACE MOUNT TRANSISTOR
Features
Mechanical Data
•
•
•
•
•
•
Epitaxial Planar Die Construction
High Collector-EmitterVoltage
Ideally Suited for Automated Assembly Processes
Ideal for Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
•
•
Case: TO252-3L
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish — Matte Tin annealed over Copper Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking Information: See Page 4
•
•
•
•
•
Ordering Information: See Page 4
Weight: 0.34 grams (approximate)
COLLECTOR
3
4
2
BASE
1
EMITTER
Device Schematic
Top View
Pin Out Configuration
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Symbol
VCBO
VCEO
VEBO
IC
Value
-100
-100
-5
Unit
V
Collector-Emitter Voltage
V
Emitter-Base Voltage
V
Continuous Collector Current
Peak Pulse Collector Current
Continuous Base Current
-3
A
-5
A
ICM
-1
A
IB
Thermal Characteristics
Characteristic
Power Dissipation @TC = 25°C
Symbol
Value
15
Unit
W
PD
Thermal Resistance, Junction to Case
Power Dissipation @TA = 25°C (Note 3)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
8.33
°C/W
W
Rθ
JC
1.5
PD
80
°C/W
°C
Rθ
JA
-55 to +150
TJ, TSTG
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
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© Diodes Incorporated
MJD32C
Document number: DS31624 Rev. 3 - 2
MJD32C
Typical Characteristics
10
10
1
VCE(sat)
VCE(sat)
Limited
Limited
DC
1
DC
100ms
10ms
1ms
100μs
1s
100ms
10ms
1ms
100µs
100m
10m
0.1
Single Pulse
Tamb=25°C
Single Pulse
TCASE=25°C
0.01
100m
1
10
100
0.1
1
10
100
-VCE Collector-Emitter Voltage (V)
-VCE Collector-Emitter Voltage (V)
Safe Operating Area
Safe Operating Area
8
6
4
2
0
TAMB=25°C
80
60
40
20
0
Minimum Copper
D=0.5
D=0.2
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
D=0.1
10
D=0.05
Single Pulse
TCASE=25°C
100µ 1m 10m 100m
1
100
1k
100µ 1m 10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Transient Thermal Impedance
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© Diodes Incorporated
MJD32C
Document number: DS31624 Rev. 3 - 2
MJD32C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Emitter Sustaining Voltage
Collector Cut-off Current
Symbol
Min
Typ
Max
Unit
Test Conditions
IC = -30mA, IB = 0
-100
⎯
⎯
V
V(SUS)CEO
ICEO
⎯
⎯
⎯
⎯
⎯
-50
-20
-1.0
μA VCB = -60V, IB = 0
μA VCE = -100V, VEB = 0
mA
Collector Cut-off Current
ICES
Emitter Cut-off Current
IEBO
⎯
VEB = -5.0V, IC = 0
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
-1.2
-1.8
V
V
VCE(SAT)
VBE(ON)
⎯
⎯
⎯
⎯
IC = -3.0A, IB = -375mA
VCE = -4.0V, IC = -3A
V
CE = -4.0V, IC = -1A
25
10
⎯
50
DC Current Gain
hFE
⎯
⎯
VCE = -4.0V, IC = -3A
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Small Signal Current Gain
IC = -500mA, VCE = -10V,
f = 1MHz
3.0
20
MHz
fT
⎯
⎯
⎯
⎯
hfe
⎯
VCE = -10V, IC = -0.5A, f = 1KHz
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
2.0
1.5
1.0
1,000
V
= -4V
CE
T
T
= 150°C
A
A
= 85°C
= 25°C
T
A
100
T
= -55°C
A
0.5
0
10
1
10
-IC, COLLECTOR CURRENT (mA)
Fig. 2 Typical DC Current Gain vs. Collector Current
100
1,000
10,000
0
25
TA, AMBIENT TEMPERATURE (
Fig. 1 Power Dissipation vs. Ambient Temperature
50
75
100
125
150
°C)
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© Diodes Incorporated
MJD32C
Document number: DS31624 Rev. 3 - 2
MJD32C
1.4
1.2
1
I
/I = 8
B
C
V
= -4V
CE
1.0
T
= 150°C
A
0.1
T
= 85°C
A
0.8
0.6
0.4
T
= 25°C
A
T
T
= -55°C
= 25°C
A
T
= -55°C
A
A
0.01
T
= 85°C
A
T
= 150°C
A
0.2
0
0.001
1
10
100
1,000
10,000
1
10
100
1,000
10,000
-IC, COLLECTOR CURRENT (mA)
-IC, COLLECTOR CURRENT (mA)
Fig. 3 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
Fig. 4 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
1,000
1.2
1.0
f = 1MHz
I
/I = 8
B
C
0.8
T
= -55°C
= 25°C
A
C
ibo
100
0.6
T
A
T
= 85°C
A
0.4
T
= 150°C
A
0.2
C
obo
10
0
1
0.1
1
10
100
10
100
1,000
10,000
VR, REVERSE VOLTAGE (V)
-IC, COLLECTOR CURRENT (mA)
Fig. 6 Typical Capacitance Characteristics
Fig. 5 Typical Base-Emitter Saturation Voltage
vs. Collector Current
Ordering Information (Note 5)
Part Number
Case
Packaging
MJD32C-13
TO252-3L
2500/Tape & Reel
Notes:
5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
MJD32C = Product Type Marking Code
= Manufacturers’ code marking
YYWW = Date Code Marking
YY = Last Digit of Year, (ex: 08 = 2008)
WW = Week Code (01 – 53)
YYWW
MJD32C
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© Diodes Incorporated
MJD32C
Document number: DS31624 Rev. 3 - 2
MJD32C
Package Outline Dimensions
TO252-3L
Dim Min Max Typ
E
A
2.19 2.39 2.29
A
b3
A1 0.00 0.13 0.08
A2 0.97 1.17 1.07
c2
L3
b
0.64 0.88 0.783
b2 0.76 1.14 0.95
b3 5.21 5.46 5.33
c2 0.45 0.58 0.531
E1
A2
D
H
D
6.00 6.20 6.10
D1 5.21
−
−
−
e
2.286
−
E
6.45 6.70 6.58
L4
A1
E1 4.32
−
−
H
L
9.40 10.41 9.91
1.40 1.78 1.59
L
e
L3 0.88 1.27 1.08
L4 0.64 1.02 0.83
3X b
2X b2
a
a
0°
10°
−
All Dimensions in mm
Suggested Pad Layout
X2
Dimensions
Value (in mm)
Z
11.6
1.5
7.0
2.5
7.0
6.9
2.3
Y2
X1
X2
Y1
Y2
C
Z
C
Y1
E1
X1
E1
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© Diodes Incorporated
MJD32C
Document number: DS31624 Rev. 3 - 2
MJD32C
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2010, Diodes Incorporated
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© Diodes Incorporated
MJD32C
Document number: DS31624 Rev. 3 - 2
相关型号：
MJD32CQ-13
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin, DPAK-3/2
DIODES
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