DMT10H010LSS_18 [DIODES]
100V N-CHANNEL ENHANCEMENT MODE MOSFET;
| 型号： | DMT10H010LSS_18 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 100V N-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总7页 (文件大小：373K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMT10H010LSS
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
100% Unclamped Inductive Switch (UIS) Test in Production
ID MAX
TC = +25°C
BVDSS
RDS(ON) Max
9.5mΩ @ VGS = 10V
High Conversion Efficiency
Low RDS(ON) – Minimizes On State Losses
Low Input Capacitance
100V
29.5A
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This new generation N-Channel Enhancement Mode MOSFET is
designed to minimize RDS(ON) and yet maintain superior switching
performance. This device is ideal for use in Notebook battery power
management and Load switch.
Mechanical Data
Backlighting
Case: SO-8
Power Management Functions
DC-DC Converters
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (Approximate)
D
S
S
S
G
D
SO-8
D
G
D
D
S
Top View
Equivalent circuit
Internal Schematic
Top View
Ordering Information (Note 4)
Part Number
Case
Packaging
DMT10H010LSS-13
SO-8
2,500/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
8
5
= Manufacturer’s Marking
T1010LS = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 18 = 2018)
WW = Week (01 to 53)
T1010LS
YY WW
1
4
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© Diodes Incorporated
DMT10H010LSS
Document number: DS38035 Rev.6 - 2
DMT10H010LSS
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Steady
State
Continuous Drain Current (Note 6), VGS = 10V
Steady
State
Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 6)
Avalanche Current (Note 8), L=0.3mH
Symbol
VDSS
Value
100
Unit
V
±20
V
VGSS
TA = +25°C
TA = +70°C
TC = +25°C
TC = +100°C
11.5
9.2
A
A
ID
29.5
18.6
ID
IDM
IS
75
3
A
A
10
15
A
IAS
EAS
Avalanche Energy (Note 8), L=0.3mH
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
1.4
Unit
W
Total Power (Note 5)
PD
Steady State
90
48.8
1.9
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
°C/W
W
R
JA
t<10s
PD
Steady State
t<10s
66
35.8
10.1
Thermal Resistance, Junction to Ambient (Note 6)
°C/W
R
JA
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
°C/W
°C
R
JC
-55 to +150
TJ, TSTG
Electrical Characteristics (TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
100
—
—
—
—
—
1
V
BVDSS
IDSS
VGS = 0V, ID = 1mA
VDS = 80V, VGS = 0V
VGS = 20V, VDS = 0V
µA
nA
—
±100
IGSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
1.4
—
—
—
—
1.9
8
2.8
9.5
12
V
mΩ
V
VGS(TH)
RDS(ON)
VSD
VDS = VGS, ID = 250µA
VGS = 10V, ID = 13A
VGS = 6V, ID = 13A
VGS = 4.5V, ID = 5A
VGS = 0V, IS = 13A
Static Drain-Source On-Resistance
9
10
0.8
14.5
1.3
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
—
—
—
—
—
—
—
—
—
—
—
—
—
4166
764
44
—
—
—
—
—
—
—
—
—
—
—
—
—
Ciss
Coss
Crss
Rg
VDS = 50V, VGS = 0V
f = 1MHz
Output Capacitance
pF
Ω
Reverse Transfer Capacitance
Gate Resistance
2
VDS = 0V, VGS = 0V, f = 1MHz
58.4
11.4
14.2
11.6
14.1
42.9
22
Total Gate Charge
Qg
VDD = 50V, ID = 13A,
VGS = 10V
Gate-Source Charge
Gate-Drain Charge
nC
Qgs
Qgd
tD(ON)
tR
Turn-On Delay Time
Turn-On Rise Time
VDD = 50V, VGS = 10V,
ID = 13A, Rg = 6Ω
ns
Turn-Off Delay Time
tD(OFF)
tF
Turn-Off Fall Time
49.8
85.1
Reverse Recovery Time
Reverse Recovery Charge
ns
tRR
IF = 13A, di/dt = 100A/µs
nC
QRR
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
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© Diodes Incorporated
DMT10H010LSS
Document number: DS38035 Rev.6 - 2
DMT10H010LSS
30
25
20
15
10
5
30.0
25.0
20.0
15.0
10.0
5.0
VGS=4.0V
VGS=4.5V
VDS=5V
VGS=3.5V
VGS=5.0V
VGS=6.0V
VGS=10.0V
125℃
150℃
85℃
25℃
VGS=3.0V
2.5
175℃
-55℃
0.0
0
0
0.5
1
1.5
2
3
1
2
3
4
5
6
VDS, DRAIN-SOURCE VOLTAGE (V)
VGS, GATE-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
Figure 2. Typical Transfer Characteristic
0.05
0.04
0.03
0.02
0.01
0
0.012
0.011
0.01
ID = 13A
VGS = 4.5V
0.009
0.008
0.007
0.006
0.005
0.004
VGS = 6V
ID = 5A
VGS = 10V
0
2
4
6
8
10 12 14 16 18 20
0
2
4
6
8
10 12 14 16 18 20
ID, DRAIN-SOURCE CURRENT (A)
VGS, GATE-SOURCE VOLTAGE (V)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
Figure 4. Typical Transfer Characteristic
2.5
2
0.02
0.018
0.016
0.014
0.012
0.01
VGS = 10V
VGS = 10V, ID = 13A
VGS = 6V, ID = 13A
150℃
1.5
1
125℃
85℃
0.008
0.006
0.004
0.002
0
VGS = 4.5V, ID = 5A
25℃
0.5
0
-55℃
-50 -25
0
25
50
75 100 125 150
0
2
4
6
8
10 12 14 16 18 20
ID, DRAIN CURRENT (A)
TJ, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Temperature
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
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© Diodes Incorporated
DMT10H010LSS
Document number: DS38035 Rev.6 - 2
DMT10H010LSS
4
3.5
3
0.02
0.018
0.016
0.014
0.012
0.01
VGS = 4.5V, ID = 5A
VGS = 6V, ID = 13A
2.5
2
ID=1mA
0.008
0.006
0.004
0.002
0
1.5
1
ID=250μA
VGS = 10V, ID = 13A
0.5
0
-50 -25
0
25 50 75 100 125 150 175
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (℃)
TJ, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
Figure 7. On-Resistance Variation with Temperature
30
25
20
15
10
5
10000
Ciss
VGS=0V, TJ=125℃
1000
100
10
VGS=0V, TJ=150℃
VGS=0V, TJ=175℃
Coss
Crss
VGS=0V, TJ=85℃
VGS=0V, TJ=25℃
f=1MHz
VGS=0V, TJ=-55℃
1
0
0
20
40
60
80
100
0
0.3
0.6
0.9
1.2
1.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs Current
100
R
DS(on)
Limited
10
8
10
DC
1
P
= 10s
W
6
P
= 1s
W
P
= 100ms
W
0.1
0.01
P
= 10ms
4
W
P
= 1ms
W
TJ(max)= 150°C
TA = 25°C
VDS = 50V, ID = 13A
P
= 100µs
W
2
VGS = 10V
Single Pulse
DUT on 1 * MRP Board
0
0.001
0.01
0.1
1
10
100
1000
0
10
20
30
40
50
60
VDS , DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
Qg (nC)
Figure 11. Gate Charge
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© Diodes Incorporated
DMT10H010LSS
Document number: DS38035 Rev.6 - 2
DMT10H010LSS
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
0.01
RJA(t) = r(t) * RJA
RJA = 90°C/W
Duty Cycle, D = t1/ t2
D = Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
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© Diodes Incorporated
DMT10H010LSS
Document number: DS38035 Rev.6 - 2
DMT10H010LSS
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
SO-8
SO-8
Dim
A
A1
b
c
D
Min
1.40
0.10
0.30
0.15
4.85
5.90
3.80
3.85
--
Max
1.50
0.20
0.50
0.25
4.95
6.10
3.90
3.95
--
Typ
1.45
0.15
0.40
0.20
4.90
6.00
3.85
3.90
1.27
0.35
0.72
0.65
E
1
E
b
E1
E0
e
h
L
E1
h
)
Q
sides
All
-
--
0.82
0.70
(
7°
9°
c
0.62
0.60
Q
4°± 3°
A
All Dimensions in mm
Gauge Plane
Seating Plane
L
A1
e
E0
D
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SO-8
X1
Dimensions Value (in mm)
C
X
X1
Y
1.27
0.802
4.612
1.505
6.50
Y1
Y1
Y
C
X
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DMT10H010LSS
Document number: DS38035 Rev.6 - 2
DMT10H010LSS
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
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Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
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indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2018, Diodes Incorporated
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© Diodes Incorporated
DMT10H010LSS
Document number: DS38035 Rev.6 - 2
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