DMT10H015LCG-13 [DIODES]
100V N-CHANNEL ENHANCEMENT MODE MOSFET;
| 型号： | DMT10H015LCG-13 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 100V N-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总7页 (文件大小：489K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMT10H015LCG
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
100% Unclamped Inductive Switch (UIS) Test in Production
ID
BVDSS
RDS(ON) Max
TC = +25°C
High Conversion Efficiency
Low RDS(ON) – Minimizes On State Losses
Low Input Capacitance
34A
32A
15mΩ @ VGS = 10V
19.5mΩ @ VGS = 6V
100V
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Description and Applications
This new generation N-Channel Enhancement Mode MOSFET is
designed to minimize RDS(ON) and yet maintain superior switching
performance. This device is ideal for use in Notebook battery power
management and Loadswitch..
Mechanical Data
Case: V-DFN3333-8 (Type B)
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Backlighting
Power Management Functions
DC-DC Converters
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.027 grams (Approximate)
Pin 1
D
S
S
S
G
G
D
D
D
D
S
Top View
Internal Schematic
Equivalent circuit
Top View
Bottom View
Ordering Information (Note 4)
Part Number
Case
Packaging
DMT10H015LCG-7
DMT10H015LCG-13
V-DFN3333-8 (Type B)
V-DFN3333-8 (Type B)
2,000/Tape & Reel
3,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
T10 = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 16 = 2016)
WW = Week (01 to 53)
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© Diodes Incorporated
DMT10H015LCG
Document number: DS38362 Rev. 3 - 2
DMT10H015LCG
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
100
Unit
V
Gate-Source Voltage
±20
V
VGSS
Steady
State
TA = +25C
TA = +70C
TC = +25C
TC = +100C
9.4
7.5
A
A
Continuous Drain Current, VGS = 10V (Note 6)
Continuous Drain Current, VGS = 10V
ID
ID
Steady
State
34
21
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%)
Avalanche Current, L = 3mH (Note 8)
1.6
54
A
A
IS
IDM
IAS
EAS
7.5
85
A
Avalanche Energy, L = 3mH (Note 8)
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Symbol
PD
R
Value
1
Unit
W
118
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
°C/W
W
JA
2.1
59
PD
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case
°C/W
°C/W
R
JA
4.5
R
JC
Operating and Storage Temperature Range
-55 to +150
°C
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
100
—
—
—
—
—
1
V
BVDSS
IDSS
VGS = 0V, ID = 1mA
µA
nA
VDS = 80V, VGS = 0V
—
±100
IGSS
VGS = 20V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
1.4
—
—
—
—
2
3.5
15
V
VGS(TH)
RDS(ON)
VSD
VDS = VGS, ID = 250µA
VGS = 10V, ID = 20A
VGS = 6V, ID = 20A
VGS = 4.5V, ID = 5A
VGS = 0V, IS = 20A
12.1
15
mΩ
Static Drain-Source On-Resistance
19.5
26
18.9
0.9
mΩ
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
1.3
V
—
—
—
—
—
—
—
—
—
—
—
—
—
1871
261
6.9
—
—
—
—
—
—
—
—
—
—
—
—
—
Ciss
Coss
Crss
Rg
VDS = 50V, VGS = 0V
f = 1MHz
Output Capacitance
pF
Ω
Reverse Transfer Capacitance
Gate Resistance
0.75
33.3
6.9
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge
Qg
VDD = 50V, ID = 10A,
VGS = 10V
Gate-Source Charge
Gate-Drain Charge
nC
Qgs
Qgd
tD(ON)
tR
5.1
6.5
Turn-On Delay Time
7
Turn-On Rise Time
VDD = 50V, VGS = 10V,
ID = 10A, Rg = 6Ω
ns
19.7
8.1
Turn-Off Delay Time
tD(OFF)
tF
Turn-Off Fall Time
37.9
51.9
Reverse Recovery Time
Reverse Recovery Charge
ns
tRR
IF = 10A, di/dt = 100A/µs
nC
QRR
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
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© Diodes Incorporated
DMT10H015LCG
Document number: DS38362 Rev. 3 - 2
DMT10H015LCG
30
25
20
15
10
5
30.0
25.0
20.0
15.0
10.0
5.0
VDS = 5V
VGS = 10.0V
VGS = 6.0V
VGS = 4.5V
VGS = 4.0V
125℃
VGS = 3.5V
85℃
25℃
150℃
-55℃
0
0.0
1.5
2
2.5
3
3.5
4
4.5
0
0.5
1
1.5
2
2.5
3
VGS, GATE-SOURCE VOLTAGE (V)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
Figure 1. Typical Output Characteristic
0.05
0.04
0.03
0.02
0.01
0
0.025
0.02
ID = 5A
VGS = 4.5V
VGS = 6V
ID = 20A
0.015
0.01
VGS = 10V
0.005
0
5
10
15
20
0
5
10
15
20
25
30
ID, DRAIN-SOURCE CURRENT (A)
VGS, GATE-SOURCE VOLTAGE (V)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
Figure 4. Typical Transfer Characteristic
1.8
1.6
1.4
1.2
1
0.03
0.025
0.02
0.015
0.01
0.005
0
VGS = 10V
VGS = 6V, ID = 20A
VGS = 10V, ID = 20A
150℃
125℃
85℃
VGS = 4.5V, ID = 5A
25℃
-55℃
0.8
0.6
-50
-25
0
25
50
75
100 125 150
0
5
10
15
20
25
30
TJ, JUNCTION TEMPERATURE (℃)
ID, DRAIN CURRENT (A)
Figure 6. On-Resistance Variation with Junction
Temperature
Figure 5. Typical On-Resistance vs. Drain Current and
Junction Temperature
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© Diodes Incorporated
DMT10H015LCG
Document number: DS38362 Rev. 3 - 2
DMT10H015LCG
0.04
0.03
0.02
0.01
0
2.8
2.6
2.4
2.2
2
ID = 1mA
VGS = 4.5V, ID = 5A
VGS = 6V, ID = 20A
1.8
1.6
1.4
1.2
1
ID = 250μA
VGS = 10V, ID = 20A
0.8
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
TJ, JUNCTION TEMPERATURE (℃)
TJ, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Junction
Temperature
Figure 8. Gate Threshold Variation vs. Junction
Temperature
30
25
20
15
10
5
10000
1000
100
10
VGS = 0V
f=1MHz
Ciss
Coss
TJ = 85oC
TJ = 25oC
TJ = 125oC
TJ = 150oC
Crss
TJ = -55oC
0
1
0
0.3
0.6
0.9
1.2
1.5
0
10
20
30
40
50
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
100
10
10
8
RDS(ON) Limited
PW =100µs
1
6
PW =1ms
PW =10ms
PW =100ms
PW =1s
0.1
4
TJ(Max) = 150℃
VDS = 50V, ID = 10A
TC = 25℃
Single Pulse
DUT on 1*MRP Board
VGS= 10V
PW =10s
2
0.01
0.001
DC
0
0
5
10
15
Qg (nC)
Figure 11. Gate Charge
20
25
30
35
0.01
0.1
1
10
100
1000
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
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© Diodes Incorporated
DMT10H015LCG
Document number: DS38362 Rev. 3 - 2
DMT10H015LCG
1
D=0.5
D=0.3
D=0.9
D=0.7
0.1
D=0.1
D=0.05
D=0.02
D=0.01
0.01
D=0.005
RθJA(t) = r(t) * RθJA
RθJA = 120℃/W
D=Single Pulse
Duty Cycle, D = t1 / t2
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
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© Diodes Incorporated
DMT10H015LCG
Document number: DS38362 Rev. 3 - 2
DMT10H015LCG
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
V-DFN3333-8 (Type B)
A3
A
V-DFN3333-8
(Type B)
Seating Plane
Dim Min
Max
Typ
A1
A
A1
A3
b
0.75 0.85 0.80
0.00
--
0.27
3.25
D
e
0.05 0.02
-- 0.203
b
0.37 0.32
3.35 3.30
2.37 2.27
3.35 3.30
2.05 1.95
L
D
D2 2.17
D2
E
E2
e
3.25
1.85
--
--
--
0.65
0.33
E
k
--
L
L1
z
0.35
--
--
0.45 0.40
E2
--
--
0.34
0.515
All Dimensions in mm
L1
k
z
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
V-DFN3333-8 (Type B)
X1
Y3
Dimensions Value (in mm)
C
C1
G
X
X1
Y
Y1
Y2
Y3
0.650
1.950
0.650
0.420
2.370
0.700
0.400
2.150
0.450
Y2
Y1
G
Y
C
X
C1
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DMT10H015LCG
Document number: DS38362 Rev. 3 - 2
DMT10H015LCG
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
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website, harmless against all damages.
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tates, international or foreign patents pending. Product names and
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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2016, Diodes Incorporated
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© Diodes Incorporated
DMT10H015LCG
Document number: DS38362 Rev. 3 - 2
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