DMN61D9UWQ-13 [DIODES]
N-CHANNEL ENHANCEMENT MODE MOSFET;
| 型号： | DMN61D9UWQ-13 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | N-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总6页 (文件大小：461K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMN61D9UWQ
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
ID max
TA = +25°C
340mA
Low On-Resistance
BVDSS
RDS(ON) max
Low Input Capacitance
2Ω @ VGS = 5.0V
Fast Switching Speed
60V
300mA
2.5Ω @ VGS = 2.5V
Low Input/Output Leakage
ESD Protected Up To 2kV
Description and Applications
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)) and yet maintain superior switching performance,
making it ideal for high efficiency power management applications:
Mechanical Data
Motor Control
Power Management Functions
Backlighting
Case: SOT323
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin Annealed over Alloy 42
Leadframe. Solderable per MIL-STD-202, Method 208
Weight: 0.006 grams (Approximate)
D
SOT323
D
G
Gate Protection
Diode
S
G
S
ESD protected up to 2kV
Top View
Top View
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMN61D9UWQ-7
DMN61D9UWQ-13
Case
SOT323
SOT323
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
1AC= Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: E = 2017)
M = Month (ex: 9 = September)
Date Code Key
Year
2017
2018
2019
2020
2021
2022
2023
2024
2025
Code
E
F
G
H
I
J
K
L
M
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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© Diodes Incorporated
DMN61D9UWQ
Document number: DS39554 Rev. 1 - 2
DMN61D9UWQ
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
60
Unit
V
Gate-Source Voltage
±20
V
VGSS
Steady
State
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
340
270
mA
mA
ID
ID
Continuous Drain Current (Note 7) VGS = 5.0V
400
300
t<5s
Maximum Continuous Body Diode Forward Current (Note 7)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) (Note 7)
0.4
1.2
A
A
IS
IDM
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
320
Unit
mW
Total Power Dissipation (Note 6)
PD
Steady State
393
306
440
289
Thermal Resistance, Junction to Ambient (Note 6)
°C/W
mW
°C/W
°C
RθJA
t<5s
Total Power Dissipation (Note 7)
PD
Steady State
Thermal Resistance, Junction to Ambient (Note 7)
RθJA
t<5s
235
Operating and Storage Temperature Range
-55 to +150
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Symbol Min Typ Max Unit
Test Condition
—
—
—
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
60
—
—
—
1.0
±10
V
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 60V, VGS = 0V
VGS = ±20V, VDS = 0V
µA
µA
IGSS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
0.5
—
1.0
V
VGS(TH)
RDS(ON)
VDS = 10V, ID = 250µA
VGS = 5.0V, ID = 0.05A
VGS = 2.5V, ID = 0.05A
VGS = 1.8V, ID = 0.05A
VDS =10V, ID = 0.2A
VGS = 0V, IS = 115mA
1.2
1.6
2.5
2.0
2.5
3.5
Static Drain-Source On-Resistance
—
Ω
—
Forward Transconductance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
200
—
mS
V
|Yfs|
VSD
—
0.75
1.4
—
—
—
—
—
—
—
—
—
—
—
28.5
3.9
2.5
65
—
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
Ω
Ciss
Coss
Crss
Rg
VDS = 30V, VGS = 0V
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
f = 1MHz , VGS = 0V, VDS = 0V
Total Gate Charge
0.4
0.1
0.1
2.1
1.8
14.4
8.4
nC
nC
nC
ns
ns
Qg
VGS = 4.5V, VDS = 10V,
ID = 250mA
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
tD(ON)
tR
Turn-On Delay Time
Turn-On Rise Time
VDD = 30V, VGS = 10V,
Turn-Off Delay Time
Turn-Off Fall Time
ns RG = 25Ω, ID = 200mA
tD(OFF)
tF
ns
Notes:
6. Device mounted on FR-4 PCB, with minimum recommended pad layout.
7. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
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DMN61D9UWQ
Document number: DS39554 Rev. 1 - 2
DMN61D9UWQ
1.0
0.8
0.8
0.6
V
= 5.0V
DS
V
= 10V
GS
V
= 4.5V
GS
0.6
V
= 3.0V
GS
V
= 2.5V
0.4
0.2
0
GS
V
= 2.0V
0.4
0.2
0.0
GS
T
= 150C
A
T
= 125C
T = 85C
A
A
V
V
= 1.8V
= 1.5V
GS
GS
T
= 25C
A
T
= -55C
A
0
4
1
2
3
4
5
0.5
1
1.5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
2
2.5
3
VDS, DRAIN -SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
3
2.5
2
3.5
3
2.5
2
V
V
= 2.5V
GS
I
= 50mA
D
1.5
1.5
1
0.5
0
= 5.0V
GS
1
0
0.2
0.4
0.6
0.8
1
20
0
5
10
15
ID, DRAIN SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Drain-Source On-Resistance
vs. Gate-Source Voltage
4.5
2.2
2
V
I
= 2.5V
GS
= 50mA
V
= 4.5V
4
3.5
3
GS
D
1.8
1.6
T
= 150C
A
2.5
2
V
I
= 5.0V
T
= 125C
= 85C
GS
= 50mA
A
1.4
1.2
D
T
A
1.5
1
T
= 25C
A
1
0.8
0.6
T
= -55C
A
0.5
0
-50 -25
0
25
50
75 100 125 150
0
0.2
0.4
0.6
0.8
1
ID, DRAIN SOURCE CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
T , JUNCTION TEMPERATURE (C)
Figure 6 On-Resistance Variation with Junction
Temperature
J
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DMN61D9UWQ
Document number: DS39554 Rev. 1 - 2
DMN61D9UWQ
100
10
1
4.5
4
V
I
= 10V
C
DS
iss
3.5
= 250mA
D
3
2.5
2
C
C
oss
1.5
1
rss
0.5
f=1MHz
0
0
0.1
0.2
0.3
0.4
0.5
0
5
10
15
20
25
30
35
40
VDS , DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Junction Capacitance
Qg, TOTAL GATE CHARGE (nC)
Figure 10 Gate Charge
10
R
DS(on)
Limited
1
0.1
0.01
DC
P
= 10s
W
P
= 1s
W
P
= 100ms
W
TJ(max)= 150°C
TC = 25°C
P
= 10ms
W
P
= 1ms
W
P
= 100µs
W
VGS = 5V
Single Pulse
DUT on 1 * MRP Board
0.001
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 11 SOA, Safe Operation Area
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© Diodes Incorporated
DMN61D9UWQ
Document number: DS39554 Rev. 1 - 2
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1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
D = 0.01
0.01
D = 0.005
RJA(t) = r(t) * RJA
RJA = 391°C/W
Duty Cycle, D = t1/ t2
Single Pulse
0.001
0.000001
1000
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t1, PULSE DURATION TIMES (sec)
Figure 12 Transient Thermal Resistance
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
D
SOT323
A2
Dim Min Max
A1 0.00 0.10
A2 0.90 1.00
Typ
0.05
0.95
0.30
0.11
2.15
2.10
1.30
c
a
b
c
D
E
0.25 0.40
0.10 0.18
1.80 2.20
2.00 2.20
A1
e
L
b
E1 1.15 1.35
e
0.650 BSC
e1 1.20 1.40
1.30
F
L
a
0.375 0.475 0.425
0.25 0.40
0.30
--
0° 8°
E
E1
All Dimensions in mm
F
e1
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© Diodes Incorporated
DMN61D9UWQ
Document number: DS39554 Rev. 1 - 2
DMN61D9UWQ
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
X
Y
Value
(in mm)
0.650
Dimensions
Y1
G
C
G
1.300
X
0.470
Y
0.600
Y1
2.500
C
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2017, Diodes Incorporated
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© Diodes Incorporated
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