DMN62D0LFB-7B [DIODES]
N-CHANNEL ENHANCEMENT MODE MOSFET; N沟道增强型MOSFET
| 型号： | DMN62D0LFB-7B |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | N-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总6页 (文件大小：276K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMN62D0LFB
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
•
•
•
•
•
•
•
•
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
ID
V(BR)DSS
RDS(ON)
TA = 25°C
100mA
50mA
2Ω @ VGS = 4V
60V
2.5Ω @ VGS = 2.5V
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Mechanical Data
•
•
Case: X1-DFN1006-3
Case Material: Molded Plastic, "Green" Molding Compound. UL
Flammability Classification Rating 94V-0
•
•
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish ⎯ NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
•
•
•
•
DC-DC Converters
Power management functions
Battery Operated Systems and Solid-State Relays
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
•
Weight: 0.001 grams (approximate)
Drain
X1-DFN1006-3
Gate
S
D
Gate
G
Protection
Diode
Source
Bottom View
Top View
Pin-Out
Equivalent Circuit
ESD PROTECTED
Ordering Information (Note 3)
Product
DMN62D0LFB-7
DMN62D0LFB-7B
Marking
NK
NK
Reel size (inches)
Tape width (mm)
Quantity per reel
3,000
7
7
8
8
10,000
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
DMN62D0LFB-7
DMN62D0LFB-7B
NK
NK
NK = Product Type Marking Code
Top View
Top View
Dot Denotes Drain Side
Bar Denotes Gate and Source Side
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October 2011
© Diodes Incorporated
DMN62D0LFB
Document number: DS35409 Rev. 2 - 2
DMN62D0LFB
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
60
Unit
V
Gate-Source Voltage
±20
V
VGSS
TA = 25°C
TA = 70°C
Steady
Continuous Drain Current (Note 4) VGS = 4.0V
State
100
75
mA
mA
ID
Pulsed Drain Current (Note 5)
200
IDM
Thermal Characteristics
Characteristic
Power Dissipation (Note 4)
Symbol
PD
Max
0.47
Unit
W
258
°C/W
°C
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 4)
Operating and Storage Temperature Range
RθJA
-55 to +150
TJ, TSTG
Electrical Characteristics @ TA = 25°C unless otherwise stated
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
60
-
-
-
-
-
-
-
V
BVDSS
IDSS
VGS = 0V, ID = 250μA
1.0
Zero Gate Voltage Drain Current TJ = 25°C
μA
nA
nA
μA
VDS = 60V, VGS = 0V
-
±100
±500
±2.0
V
GS = ±5V, VDS = 0V
Gate-Source Leakage
-
IGSS
VGS = ±10V, VDS = 0V
-
VGS = ±15V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
0.6
-
1.0
2
V
VGS(th)
VDS = VGS, ID = 250μA
-
-
-
-
-
-
1.3
1.5
1.9
2.6
0.8
0.9
VGS = 4V, ID = 100mA
2.5
3
V
V
V
GS = 2.5V, ID = 50mA
GS = 1.8V, ID = 50mA
GS = 1.5V, ID = 10mA
Ω
Static Drain-Source On-Resistance
RDS (ON)
-
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
-
S
V
|Yfs|
VSD
VDS = 10V, ID = 200mA
VGS = 0V, IS = 115mA
1.3
-
-
-
-
-
-
-
-
-
-
-
32
-
-
-
-
-
-
-
-
-
-
-
Ciss
Coss
Crss
Rg
V
DS = 25V, VGS = 0V,
Output Capacitance
4.4
pF
Ω
f = 1.0MHz
Reverse Transfer Capacitance
Gate Resistance
2.9
126
0.45
0.08
0.08
3.4
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge
Qg
V
GS = 4.5V, VDS = 10V,
Gate-Source Charge
Gate-Drain Charge
nC
Qgs
Qgd
tD(on)
tr
I
D = 250mA
Turn-On Delay Time
ns
ns
ns
ns
V
GS = 10V, VDS = 30V,
Turn-On Rise Time
3.4
RL = 150ꢀ, RG = 25ꢀ,
ID = 200mA
Turn-Off Delay Time
26.4
16.3
tD(off)
tf
Turn-Off Fall Time
Notes:
4. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.
5. Repetitive rating, pulse width limited by junction temperature.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.
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October 2011
© Diodes Incorporated
DMN62D0LFB
Document number: DS35409 Rev. 2 - 2
DMN62D0LFB
0.6
1
I
(A) @ V =2.5V
GS
D
0.5
0.4
0.3
I
(A) @ V =2.0V
GS
D
I
(A) @ V =1.8V
GS
D
0.1
I
(A) @ V =4.0V
GS
D
I
(A) @ V =3.0V
GS
D
I
(A) @ V =4.5V
GS
D
0.2
0.1
0.01
I
(A) @ V =1.5V
D
GS
0.0
0
0.001
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
0.5
1
1.5
2
VDS, DRAIN -SOURCE VOLTAGE(V)
Fig. 1 Typical Output Characteristics
VGS, GATE SOURCE VOLTAGE(V)
Fig. 2 Typical Transfer Characteristics
3
2.5
2
10
V
= 5.0V
R
(Ω
) Ave @ V =1.8V
GS
DS(ON)
G
Ave R
(Ω) @ 150°C
DS(ON)
Ave R
(Ω) @ 125°C
DS(ON)
Ave R
Ave R
(
Ω
) @ 85
°
C
DS(ON)
R
(
Ω
) Ave @ V =2.5V
DS(ON)
G
1
1.5
1
(Ω
) @ 25
°C
DS(ON)
R
(Ω
) Ave @ V =4.5V
G
DS(ON)
Ave R
(Ω) @ -55°C
DS(ON)
0.5
0
0.1
0
0.1
0.2
0.3
0.4
0
0.1
0.2
0.3
0.4
ID, DRAIN SOURCE CURRENT
ID, DRAIN SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
Fig. 4 Typical On-Resistance vs.
Drain Current and Temperature
1.6
1.4
3
2.5
2
1.2
1
1.5
1
0.8
0.6
0.4
0.2
0.5
0
-50 -25
TJ, JUNCTION TEMPERATURE (
Fig. 6 Gate Threshold Variation vs. Ambient Temperature
0
25
50
75 100 125 150
-50 -25
TJ, JUNCTION TEMPERATURE (
Fig. 5 On-Resistance Variation with Temperature
0
25
50 75 100 125 150
°C)
°
C)
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October 2011
© Diodes Incorporated
DMN62D0LFB
Document number: DS35409 Rev. 2 - 2
DMN62D0LFB
1
60
55
50
45
40
35
30
25
20
15
0.1
0.01
10
5
0.001
0
0.1
0.3
0.5
0.7
0.9
1.1
0
5
10
15
20
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 7 Diodes Forward Voltage vs. Current
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 8 Typical Junction Capacitance
10
8
1
V
=10V, I =250mA
D
DS
0.1
0.01
6
4
2
0.001
0
0
0.1
1
10
100
0.2
0.4
0.6
0.8
1
1.2
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 SOA, Safe Operation Area
QG (nC)
Fig. 9 Gate Charge Characteristics
1
r(t) @ D=0.5
r(t) @ D=0.3
r(t) @ D=0.9
0.1
r(t) @ D=0.7
r(t) @ D=0.1
r(t) @ D=0.05
r(t) @ D=0.02
0.01
r(t) @ D=0.01
R
R
(t)=r(t) * R
θJA
=273°C/W
r(t) @ D=0.005
θ
JA
JA
θ
Duty Cycle, D=t1 / t2
r(t) @ D=Single Pulse
0.001
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Fig. 11 Transient Thermal Resistance
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October 2011
© Diodes Incorporated
DMN62D0LFB
Document number: DS35409 Rev. 2 - 2
DMN62D0LFB
Package Outline Dimensions
A
X1-DFN1006-3
Dim Min Max Typ
0.53 0.50
A
A1
b1
b2
D
0.47
0
A1
0.05 0.03
0.20 0.15
0.55 0.50
0.10
0.45
D
0.95 1.075 1.00
0.55 0.675 0.60
E
b1
e
0.35
0.30 0.25
0.30 0.25
⎯
0.20
0.20
⎯
⎯
L1
L2
L3
e
b2
E
0.40
⎯
All Dimensions in mm
L2
L3
L1
Suggested Pad Layout
C
Dimensions Value (in mm)
Z
G1
G2
X
X1
Y
1.1
0.3
0.2
0.7
0.25
0.4
0.7
X1
G2
X
C
G1
Y
Z
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October 2011
© Diodes Incorporated
DMN62D0LFB
Document number: DS35409 Rev. 2 - 2
DMN62D0LFB
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2011, Diodes Incorporated
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October 2011
© Diodes Incorporated
DMN62D0LFB
Document number: DS35409 Rev. 2 - 2
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