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DMN601VK-7 [DIODES]

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR; 双N沟道增强型场效应晶体管
DMN601VK-7
型号： DMN601VK-7
厂家： DIODES INCORPORATED    DIODES INCORPORATED
描述：

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
双N沟道增强型场效应晶体管

晶体 晶体管 场效应晶体管
文件： 总4页 (文件大小：135K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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DMN601VK  
DUAL N-CHANNEL ENHANCEMENT  
MODE FIELD EFFECT TRANSISTOR  
Lead-free Green  
Features  
•
•
•
•
•
•
•
•
•
•
Dual N-Channel MOSFET  
Low On-Resistance  
SOT-563  
Low Gate Threshold Voltage  
Low Input Capacitance  
Dim Min  
Max  
0.30  
1.25  
1.70  
0.50  
1.10  
1.70  
0.60  
0.30  
0.18  
Typ  
0.25  
1.20  
1.60  
A
A
B
C
D
G
H
K
L
0.15  
1.10  
1.55  
Fast Switching Speed  
Low Input/Output Leakage  
Ultra-Small Surface Mount Package  
Lead Free By Design/RoHS Compliant (Note 2)  
ESD Protected Up To 2kV  
"Green" Device (Note 4)  
B
C
0.90  
1.50  
0.56  
0.10  
0.10  
1.00  
1.60  
0.60  
0.20  
0.11  
D
G
H
M
K
Mechanical Data  
M
All Dimensions in mm  
•
•
Case: SOT-563  
L
Case Material: Molded Plastic, “Green” Molding  
Compound. UL Flammability Classification Rating 94V-0  
Drain  
•
•
•
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminals Connections: See Diagram  
D2  
G1  
S1  
Body  
Diode  
Terminals: Finish - Matte Tin annealed over Alloy 42  
leadframe. Solderable per MIL-STD-202, Method 208  
Gate  
•
•
•
Marking: See Page 2  
ESD protected up to 2kV  
Ordering & Date Code Information: See Page 2  
Weight: 0.006 grams (approximate)  
Gate  
Protection  
Diode  
S2  
G2  
D1  
Source  
EQUIVALENT CIRCUIT PER ELEMENT  
@ TA = 25°C unless otherwise specified  
Maximum Ratings  
Characteristic  
Symbol  
VDSS  
Value  
60  
Units  
V
V
Drain-Source Voltage  
Gate-Source Voltage  
Drain Current (Note 1)  
VGSS  
20  
305  
800  
Continuous  
Pulsed (Note 3)  
ID  
mA  
Pd  
Total Power Dissipation (Note 1)  
250  
500  
mW  
°C/W  
°C  
RθJA  
Thermal Resistance, Junction to Ambient  
Operating and Storage Temperature Range  
Tj, TSTG  
-65 to +150  
Note:  
1. Device mounted on FR-4 PCB.  
2. No purposefully added lead.  
3. Pulse width ≤10µS, Duty Cycle ≤1%.  
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
DS30655 Rev. 2 - 2  
1 of 4  
DMN601VK  
www.diodes.com  
© Diodes Incorporated  
@ TA = 25°C unless otherwise specified  
Electrical Characteristics  
Characteristic  
OFF CHARACTERISTICS (Note 5)  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
Symbol  
Min  
Typ  
Max  
Unit  
Test Condition  
BVDSS  
IDSS  
VGS = 0V, ID = 10µA  
60  
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
250  
200  
50  
V
V
DS = 50V, VGS = 0V  
nA  
VGS  
VGS  
=
=
10V, VDS = 0V  
5V, VDS = 0V  
IGSS  
Gate-Source Leakage  
nA  
ON CHARACTERISTICS (Note 5)  
VGS(th)  
Gate Threshold Voltage  
VDS = VGS, ID = 250µA  
1.0  
1.6  
2.5  
V
VGS = 10V, ID = 0.5A  
VGS = 4.5V, ID = 200mA  
VDS =10V, ID = 0.2A  
⎯
⎯
2.0  
3.0  
RDS (ON)  
Static Drain-Source On-Resistance  
⎯
Ω
|Yfs|  
VSD  
Forward Transfer Admittance  
Diode Forward Voltage (Note 5)  
DYNAMIC CHARACTERISTICS  
Input Capacitance  
⎯
284  
⎯
ms  
V
VGS = 0V, IS = 115mA  
0.5  
⎯
1.4  
Ciss  
Coss  
Crss  
⎯
⎯
⎯
⎯
⎯
⎯
50  
25  
pF  
pF  
pF  
V
DS = 25V, VGS = 0V  
Output Capacitance  
f = 1.0MHz  
Reverse Transfer Capacitance  
5.0  
Notes: 5. Short duration test pulse used to minimize self-heating effect.  
1.4  
1.00  
VGS = 10V  
8V  
6V  
5V  
4V  
3V  
10V  
VDS = 10V  
Pulsed  
8V  
1.2  
6V  
5V  
1.0  
0.8  
0.6  
0.4  
0.2  
0
TA = 125°C  
0.10  
4V  
TA = 75°C  
TA = 25°C  
3V  
TA = -25°C  
0.01  
1
1.5  
2
5
2.5  
3
3.5  
4
4.5  
0
1
2
3
4
5
VDS, DRAIN-SOURCE VOLTAGE (V)  
Fig. 1 Typical Output Characteristics  
VGS, GATE-SOURCE VOLTAGE (V)  
Fig. 2 Typical Transfer Characteristics  
2
10  
VDS = 10V  
ID = 1mA  
Pulsed  
VGS = 10V  
Pulsed  
TA = 125°C  
TA = 150°C  
TA = 85°C  
1.5  
1
1
TA = -55°C  
TA = -25°C  
TA = 0°C  
TA = 25°C  
0.5  
0
0.1  
0.001  
-25  
75 100  
0
25  
50  
125 150  
-50  
0.1  
1
0.01  
Tch, CHANNEL TEMPERATURE (°C)  
ID, DRAIN CURRENT (A)  
Fig. 4 Static Drain-Source On-Resistance  
Vs. Drain Current  
Fig. 3 Gate Threshold Voltage  
vs. Channel Temperature  
DS30655 Rev. 2 - 2  
2 of 4  
www.diodes.com  
DMN601VK  
10  
7
6
5
4
VGS = 5V  
Pulsed  
TA = 25°C  
Pulsed  
TA = 85°C  
TA = 125°C  
ID = 300mA  
TA = 150°C  
1
TA = -55°C  
3
2
1
TA = 0°C  
TA = 25°C  
TA = -25°C  
ID = 150mA  
0.1  
0
4
8
16 18 20  
2
6
10 12 14  
0
1
0.1  
ID, DRAIN CURRENT (A)  
0.001  
0.01  
VGS, GATE SOURCE VOLTAGE (V)  
Fig. 6 Static Drain-Source On-Resistance  
vs. Gate-Source Voltage  
Fig. 5 Static Drain-Source On-Resistance  
vs. Drain Current  
2.5  
2
1
VGS = 0V  
Pulsed  
VGS = 10V  
Pulsed  
ID = 300mA  
TA = 125°C  
TA = 150°C  
ID = 150mA  
0.1  
TA = 85°C  
TA = 25°C  
1.5  
1
TA = 0°C  
0.01  
TA = -25°C  
0.5  
0
TA = -55°C  
0.001  
-75  
0
25 50 75  
150  
100 125  
-50 -25  
0.5  
1
0
1.5  
Tch, CHANNEL TEMPERATURE (°C)  
Fig. 7 Static Drain-Source On-State Resistance  
vs. Channel Temperature  
VSD, SOURCE-DRAIN VOLTAGE (V)  
Fig. 8 Reverse Drain Current  
vs. Source-Drain Voltage  
1
1
VGS = 10V  
VGS = 10V  
Pulsed  
TA= 25°C  
Pulsed  
TA = 25°C  
TA = 150°C  
0.1  
0.1  
TA = -55°C  
TA = 85°C  
0.01  
0.01  
VGS = 0V  
0.001  
0.001  
0
0.5  
1
0.001  
0.01  
0.1  
1
VSD, SOURCE-DRAIN VOLTAGE (V)  
ID, DRAIN CURRENT (A)  
Fig. 9 Reverse Drain Current  
vs. Source-Drain Voltage  
Fig.10 Forward Transfer Admittance  
vs. Drain Current  
DS30655 Rev. 2 - 2  
3 of 4  
DMN601VK  
www.diodes.com  
(Note 6)  
Ordering Information  
Device  
Packaging  
Shipping  
DMN601VK-7  
SOT-563  
3000/Tape & Reel  
Notes: 6. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.  
Marking Information  
D2  
G1  
S1  
K7K = Marking Code  
YM = Date Code Marking  
Y = Year ex: S = 2005  
K7K YM  
M = Month ex: 9 = September  
S2  
G2  
D1  
Date Code Key  
Year  
2005  
2006  
2007  
2008  
2009  
Code  
S
T
U
V
W
Month  
Code  
Jan  
Feb  
March  
Apr  
May  
Jun  
Jul  
Aug  
Sep  
Oct  
Nov  
Dec  
1
2
3
4
5
6
7
8
9
O
N
D
DS30655 Rev. 2 - 2  
4 of 4  
DMN601VK  
www.diodes.com  

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